Impact of fin width on digital and analog performances of n-FinFETs (2007)
Mercha, A, Parvais, B, Loo, J, Gustin, C, Dehan, M, ...
This paper examines the impact of an important geometrical parameter of FinFET devices, namely the fin width. From static and low-frequency measurements on n-FinFETs (I-V, C-V and 1/f noise),...
Dephasing Time of Two-Dimensional Holes in GaAs Open Quantum Dots (2006)
Faniel, S., Hackens, B., Vlad, A., Moldovan, L., Gustin, C., Habib, B., ...
We report magnetotransport measurements of two-dimensional holes in open quantum dots, patterned either as a single-dot or an array of dots, on a GaAs quantum well. For temperatures $T$ below 500 mK,...
Faniel, S., Tutuc, E., De Poortere, E. P., Gustin, C., Vlad, A., Melinte, S., ...
We report thermopower measurements of interacting GaAs bilayer hole systems. When the carrier densities in the two layers are equal, these systems exhibit a reentrant insulating phase near the...
Long dephasing time and high temperature ballistic transport in an InGaAs open quantum dot (2002)
Hackens, B., Faniel, S., Delfosse, F., Gustin, C., Boutry, H., Huynen, I., ...
We report on measurements of the magnetoconductance of an open circular InGaAs quantum dot between 1.3K and 204K. We observe two types of magnetoconductance fluctuations: universal conductance...