C. Jaussaud

III-V solar cell growth on wafer-bonded GaAs/Si-substrates (2006)

Schöne, J., Dimroth, F., Bett, A., Tauzin, A., Jaussaud, C.

FULLSPECTRUM: a new PV wave making more efficient use of the solar spectrum (2005)

Luque, A., Marti, A., Bett, A., Andreev, V.M., Jaussaud, C., Roosmalen, J.A.M., ...

FULLSPECTRUM: A new PV wave making more efficient use of the solar spectrum (2005)

Marti, A., Bett, A., Andreev, V.M., Jaussaud, C., Alonso, J., ...

Projet SiNERGIES : collaboration nationale sur l'augmentation des rendements de conversion des cellules au silicium (2004)

Jaussaud, C., Martinuzzi, S., Muller, J.C.

Hydrolysis of protactinium(V). III. Determination of standard thermodynamic data (2003)

Trubert, D., Le Naour, C., Jaussaud, C., Mrad, O.

Hydrolysis constants of protactinium(V) at tracer scale were deduced from the variations of partition coefficient of Pa(V) in the system: TTA/toluene/Pa(V)/H2O/H+/Na+/ClO4-, as a function of TTA and...

Hydrolysis of protactinium(V).II.Equilibrium constants at 40 and 60 degrees C: A solvent extraction study with TTA in the aqueous system Pa(V)/H$_2$O/H$^+$/Na$^+$/ClO$_{4^-}$ (2003)

Le Naour, C., Trubert, D., Jaussaud, C.

The hydrolysis of protactinium (V) was studied at tracer scale (ca. 10(-12) M) with the solvent extraction method involving the aqueous system: Pa(V)/H2O/H+/Na+/ClO4- at 40 and 60degreesC for three...

Contribution a l'etude thermodynamique de l'hydrolyse de Pa(V) a l'echelle des traces par la technique d'extraction liquide-liquide avec la thenoyltrifluoroacetone(TTA). - Caracterisationdu partage de la thenoyltrifluoroacetone dans le systeme TTA/H$_2$O/toluene/Na$^+$/H$^+$/ClO$_4$ (2003)

Jaussaud, C.

Hydrolysis of protactinium(V). III. Determination of standard thermodynamic data (2003)

Trubert, D., Le Naour, C., Jaussaud, C., Mrad, O.

Hydrolysis constants of protactinium(V) at tracer scale were deduced from the variations of partition coefficient of Pa(V) in the system: TTA/toluene/Pa(V)/H2O/H+/Na+/ClO4-, as a function of TTA and...

Hydrolysis of protactinium(V).II.Equilibrium constants at 40 and 60 degrees C: A solvent extraction study with TTA in the aqueous system Pa(V)/H$_2$O/H$^+$/Na$^+$/ClO$_{4^-}$ (2003)

Le Naour, C., Trubert, D., Jaussaud, C.

The hydrolysis of protactinium (V) was studied at tracer scale (ca. 10(-12) M) with the solvent extraction method involving the aqueous system: Pa(V)/H2O/H+/Na+/ClO4- at 40 and 60degreesC for three...

Contribution a l'etude thermodynamique de l'hydrolyse de Pa(V) a l'echelle des traces par la technique d'extraction liquide-liquide avec la thenoyltrifluoroacetone(TTA). - Caracterisationdu partage de la thenoyltrifluoroacetone dans le systeme TTA/H$_2$O/toluene/Na$^+$/H$^+$/ClO$_4$ (2003)

Jaussaud, C.

Hydrolysis of protactinium(V). I. Equilibrium constants at 25 degrees C: A solvent extraction study with TTA in the aqueous system Pa(V)/H2O/H+/Na+/ClO4- (2002)

Trubert, D., Le Naour, C., Jaussaud, C.

The hydrolysis of protactinium(V) was studied at tracer scale (ca. 10(-12) M) with the solvent extraction method involving the aqueous system: Pa(V)/H2O/H+/Na+/ClO4- at 25.0degreesC for three values...

Hydrolysis of protactinium(V). I. Equilibrium constants at 25 degrees C: A solvent extraction study with TTA in the aqueous system Pa(V)/H2O/H+/Na+/ClO4- (2002)

Trubert, D., Le Naour, C., Jaussaud, C.

The hydrolysis of protactinium(V) was studied at tracer scale (ca. 10(-12) M) with the solvent extraction method involving the aqueous system: Pa(V)/H2O/H+/Na+/ClO4- at 25.0degreesC for three values...

Low frequency noise in silicon carbide Schottky diodes (1997)

Anghel, L., Ouisse, T., Billon, T., Lassagne, P., Jaussaud, C.

The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type SiC devices with Ti gates. The noise results have been related to general properties such...

Experimental investigation of noise sources in silicon carbide Schottky barriers (1996)

Anghel, L., Ouisse, T., Billon, T., Lassagne, P., Jaussaud, C.

The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type silicon carbide devices with Ti gate. The noise results have been related to general...

RECUIT D'IMPLATATION PAR FAISCEAU D'ÉLECTRONS BALAYÉS (1983)

Jaussaud, C., Biasse, B., Cartier, A., Bontemps, A.

Des échantillons de silicium dopés au Bore par implantation (BF2 30 Kev, 1015 ions x cm-2) ont été recuits à l'aide d'un faisceau d'électrons balayés, à des températures allant de 1000 à...

RECUIT D'IMPLATATION PAR FAISCEAU D'ÉLECTRONS BALAYÉS (1983)

Jaussaud, C., Biasse, B., Cartier, A., Bontemps, A.

Des échantillons de silicium dopés au Bore par implantation (BF2 30 Kev, 1015 ions x cm-2) ont été recuits à l'aide d'un faisceau d'électrons balayés, à des températures allant de 1000 à...

RECUIT D'IMPLATATION PAR FAISCEAU D'ÉLECTRONS BALAYÉS (1983)

Jaussaud, C., Biasse, B., Cartier, A., Bontemps, A.

Des échantillons de silicium dopés au Bore par implantation (BF2 30 Kev, 1015 ions x cm-2) ont été recuits à l'aide d'un faisceau d'électrons balayés, à des températures allant de 1000 à...