Exon, intron and splice site locations in the spliceosomal B complex. (2009)
Wolf, E., Kastner, B., Deckert, J., Merz, C., Stark, H., Luehrmann, R.
Exploring business models for open innovation in rural living labs (2007)
Schaffers, H, Cordoba, MG, Hongisto, P, Kallai, T, Merz, C, Van Rensburg, J
2007: 13th International Conference on Concurrent Enterprising, Sophia-Antipolis, France, 4-6 June 2007
Exploring business models for open innovation in rural living labs (2007)
Schaffers, H, Cordoba, MG, Hongisto, P, Kallai, T, Merz, C, Van Rensburg, J
2007: 13th International Conference on Concurrent Enterprising, Sophia-Antipolis, France, 4-6 June 2007
Merz, C., Kunzer, M., Santic, B., Kaufmann, U., Akasaki, I., Amano, H.
The temperature dependence of free and bound exciton lines in high-purity, undoped wurtzite GaN layers has been studied by photoluminescence (PL) between 2 and 300 K. Below 30 K the neutral donor...
Ionized donor bound excitons in GaN (1997)
Santic, B., Merz, C., Kaufmann, U., Niebuhr, R., Obloh, H., Bachem, K.
The temperature and excitation power dependence of a bound exciton photoluminescence line S with a localization energy Q=11.5 meV has been studied in undoped and moderately Mg-doped wurtzite GaN of...
Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O (1997)
Niebuhr, R., Bachem, K.H., Kaufmann, U., Maier, M., Merz, C., Santic, B., ...
Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N2O as oxygen dopant source. The layers were deposited on 2" sapphire substrates from trimethylgallium and especially...
Resonant multi-LO-phonon Raman scattering in hexagonal GaN (1996)
Behr, D., Wagner, J., Niebuhr, R., Merz, C., Bachem, K.H., Amano, H., ...
We report on resonant Raman scattering in state-of-the-art hexagonal GaN. Besides multi-LO-phonon scattering up to fifth order, dispersive modes were observed which are interpreted as acoustic phonon...
Light generating carrier recombination and impurities in wurtzite GaN/Al2O3 grown by MOCVD (1996)
Kaufmann, U., Kunzer, M., Merz, C., Akasaki, I., Amano, H.
We have studied by photoluminescence (PL) and optically detected magnetic resonance (ODMR) un- doped, n-doped and p-doped thin wurtzite GaN layers grown by metal-organic chemical vapor deposition on...
Free and bound excitons in thin wurtzite GaN layers on sapphire (1996)
Merz, C., Kunzer, M., Kaufmann, U., Akasaki, I., Amano, H.
Free and bound excitons have been studied by photoluminescence in thin (1-10 microm) wurtzite-undoped GaN, n-type GaN:Si as well as p-type GaN:Mg and GaN:Zn layers grown by metal-organic chemical...