Strain determination in MBE-grown InAs quantum wires on InP (2006)
Mazuelas, A., González, Luisa, García, Jorge M., Gozález, Yolanda, Schuelli, T., Priester, C., ...
We have determined the strain in the three crystallographic directions in InAs quantum wires (QWr) grown by molecular beam epitaxy on (001)InP substrate. We used triple crystal x-ray diffraction to...
Letoublon, A., Favre-Nicolin, V., Renevier, H., Proietti, M. G., Monat, C., Gendry, M., ...
We have used x-ray anomalous diffraction to extract the x-ray structure factor of InAs quantum stick-like islands, embedded in InP. The average height of the quantum sticks (QSs), as deduced from the...
Theoretical approaches of semiconductor interfaces and of their defects : recent developments (1991)
We describe recent developments of theoretical studies concerning semiconductor interfaces from different points of view: the widely used effective mass approximation and its limitations are...
Theoretical approaches of semiconductor interfaces and of their defects : recent developments (1991)
We describe recent developments of theoretical studies concerning semiconductor interfaces from different points of view: the widely used effective mass approximation and its limitations are...
Theoretical approaches of semiconductor interfaces and of their defects : recent developments (1991)
We describe recent developments of theoretical studies concerning semiconductor interfaces from different points of view: the widely used effective mass approximation and its limitations are...
ULTRA-THIN SEMICONDUCTOR QUANTUM WELLS : POTENTIAL SHAPES AND STRAIN EFFECTS (1987)
Priester, C., Allan, G., Lannoo, M.
In the tight-binding approximation, we calculate the potential shape of an ultra-thin (one to sixteen layers) semiconductor quantum well. The potential due to charge transfers near the...
ULTRA-THIN SEMICONDUCTOR QUANTUM WELLS : POTENTIAL SHAPES AND STRAIN EFFECTS (1987)
Priester, C., Allan, G., Lannoo, M.
In the tight-binding approximation, we calculate the potential shape of an ultra-thin (one to sixteen layers) semiconductor quantum well. The potential due to charge transfers near the...
ULTRA-THIN SEMICONDUCTOR QUANTUM WELLS : POTENTIAL SHAPES AND STRAIN EFFECTS (1987)
Priester, C., Allan, G., Lannoo, M.
In the tight-binding approximation, we calculate the potential shape of an ultra-thin (one to sixteen layers) semiconductor quantum well. The potential due to charge transfers near the...
BREAKDOWN OF THREE DIMENSIONAL EFFECTIVE MASS APPROXIMATION IN NARROW SUPERLATTICES (1984)
Priester, C., Allan, G., Lannoo, M.
In the limit of very narrow superlattices, a theory using three dimensional effective mass approximation becomes inadequate. We have studied at which stage this approximation becomes poor and what is...
BREAKDOWN OF THREE DIMENSIONAL EFFECTIVE MASS APPROXIMATION IN NARROW SUPERLATTICES (1984)
Priester, C., Allan, G., Lannoo, M.
In the limit of very narrow superlattices, a theory using three dimensional effective mass approximation becomes inadequate. We have studied at which stage this approximation becomes poor and what is...
BREAKDOWN OF THREE DIMENSIONAL EFFECTIVE MASS APPROXIMATION IN NARROW SUPERLATTICES (1984)
Priester, C., Allan, G., Lannoo, M.
In the limit of very narrow superlattices, a theory using three dimensional effective mass approximation becomes inadequate. We have studied at which stage this approximation becomes poor and what is...