Leong, Hoi Liong, Gan, C.L., Pey, Kin Leong, Thompson, Carl V., Li, Hongyu
Bonded copper interconnects were created using thermo-compression bonding and the dicing yield was used as an indication of the bond quality. SEM images indicated that the Cu was plastically...
Leong, Hoi Liong, Gan, C.L., Pey, Kin Leong, Thompson, Carl V., Li, Hongyu
Bonded copper interconnects were created using thermo-compression bonding and the dicing yield was used as an indication of the bond quality. SEM images indicated that the Cu was plastically...
The Influence of Adjacent Segment on the Reliability of Cu Dual Damascene Interconnects (2005)
Chang, Choon Wai, Thompson, Carl V., Gan, C.L., Pey, Kin Leong, Choi, Wee Kiong, ...
Three terminal âdotted-I’ interconnect structures, with vias at both ends and an additional via in the middle, were tested under various test conditions. Mortalities (failures) were found in...
The Influence of Adjacent Segment on the Reliability of Cu Dual Damascene Interconnects (2005)
Chang, Choon Wai, Thompson, Carl V., Gan, C.L., Pey, Kin Leong, Choi, Wee Kiong, ...
Three terminal âdotted-I’ interconnect structures, with vias at both ends and an additional via in the middle, were tested under various test conditions. Mortalities (failures) were found in...
Growth of ZnO Nanorods on GaN Using Aqueous Solution Method (2004)
Quang, Hong Le, Chua, Soo-Jin, Loh, Kian Ping, Chen, Zhen, Thompson, Carl V., Fitzgerald, Eugene A.
Uniformly distributed ZnO nanorods with diameter 80-120 nm and 1-2µm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of...
Leong, Hoi Liong, Gan, C.L., Pey, Kin Leong, Tsang, Chi-fo, Thompson, Carl V., Hongyu, Li
Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper...
Leong, Hoi Liong, Gan, C.L., Pey, Kin Leong, Tsang, Chi-fo, Thompson, Carl V., Hongyu, Li
Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper...
Growth of ZnO Nanorods on GaN Using Aqueous Solution Method (2004)
Quang, Hong Le, Chua, Soo-Jin, Loh, Kian Ping, Chen, Zhen, Thompson, Carl V., Fitzgerald, Eugene A.
Uniformly distributed ZnO nanorods with diameter 80-120 nm and 1-2µm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of...
Carbon Nanotube Growth Using Ni Catalyst in Different Layouts (2004)
Nguyen, H. Q., Krishnan, R., Choi, K. W., Thompson, Carl V., Lim, F. Y.
Vertically aligned carbon nanotubes have been grown using Ni as catalyst by plasma enhanced chemical vapor deposition system (PECVD) in various pre-patterned substrates. Ni was thermally evaporated...
Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method (2004)
Quang, Hong Le, Chua, Soo-Jin, Loh, Kian Ping, Chen, Zhen, Thompson, Carl V., Fitzgerald, Eugene A.
Uniformly distributed ZnO nanorods with diameter 70-100 nm and 1-2μm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of...
The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates (2004)
Zang, Keyan, Chua, Soo-Jin, Thompson, Carl V.
The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of...
The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates (2004)
Zang, Keyan, Chua, Soo-Jin, Thompson, Carl V.
The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of...
Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method (2004)
Quang, Hong Le, Chua, Soo-Jin, Loh, Kian Ping, Chen, Zhen, Thompson, Carl V., Fitzgerald, Eugene A.
Uniformly distributed ZnO nanorods with diameter 70-100 nm and 1-2μm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of...
Carbon Nanotube Growth Using Ni Catalyst in Different Layouts (2004)
Nguyen, H. Q., Krishnan, R., Choi, K. W., Thompson, Carl V., Lim, F. Y.
Vertically aligned carbon nanotubes have been grown using Ni as catalyst by plasma enhanced chemical vapor deposition system (PECVD) in various pre-patterned substrates. Ni was thermally evaporated...
Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects (2003)
Gan, C.L., Wei, F., Thompson, Carl V., Lee, J.H., Marieb, T., ...
The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect...
Zhu, Tie-Jun, Lu, Li, Thompson, Carl V.
Pulsed laser deposition has been used to grow Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT)/LaNiO₃ (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO₂-coated...
Mortality Dependence of Cu Dual Damascene Interconnects on Adjacent Segments (2003)
Chang, Choon Wai, Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong, Hwang, N.
Electromigration experiments have been carried out on straight interconnects that have single vias at each end, and are divided into two segments by a via in the center ("dotted-I" structures). For...
Zang, Keyan, Wang, Lianshan, Chua, Soo-Jin, Thompson, Carl V.
AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium...
Zang, Keyan, Wang, Lianshan, Chua, Soo-Jin, Thompson, Carl V.
AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium...
Mortality Dependence of Cu Dual Damascene Interconnects on Adjacent Segments (2003)
Chang, Choon Wai, Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong, Hwang, N.
Electromigration experiments have been carried out on straight interconnects that have single vias at each end, and are divided into two segments by a via in the center ("dotted-I" structures). For...
Zhu, Tie-Jun, Lu, Li, Thompson, Carl V.
Pulsed laser deposition has been used to grow Pb(Zr₀.₅₂Ti₀.₄₈)O₃ (PZT)/LaNiO₃ (LNO) heterostructures with restricted crystallographic orientations on bare Si(001) and SiO₂-coated...
Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects (2003)
Gan, C.L., Wei, F., Thompson, Carl V., Lee, J.H., Marieb, T., ...
The median-times-to-failure (t₅₀’s) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to...
Characterization and Modeling of Stress Evolution During Nickel Silicides Formation (2003)
Liew, K.P., Li, Yi, Yeadon, Mark, Bernstein, R., Thompson, Carl V.
An curvature measurement technique was used to characterize the stress evolution during reaction of a Ni film and a silicon substrate to form nickel silicide. Stress changes were measured at each...
Zang, Keyan, Wang, Lianshan, Chua, Soo-Jin, Thompson, Carl V.
The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN...
Metallic Cluster Coalescence: Molecular Dynamics Simulations of Boundary Formation (2003)
Takahashi, A. R., Thompson, Carl V., Carter, W. Craig
During the evaporative deposition of polycrystalline thin films, the development of a tensile stress at small film thicknesses is associated with island coalescence. Several continuum models exist to...
Research on Polycrystalline Films for Micro- and Nano-Systems (2003)
Polycrystalline films are used in a wide array of micro- and nano-scale devices, for electronic, mechanical, magnetic, photonic and chemical functions. Increasingly, the properties, performance, and...
Chang, Choon Wai, Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong
Failure mechanisms observed in electromigration (EM) stressed dual damascene Cu/SiO₂ interconnects trees were studied and simulated. Failure sites with âmelt patch’ or âcrater’ are...
Reliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees (2003)
Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong
Electromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried...
Reliability of Multi-Terminal Copper Dual-Damascene Interconnect Trees (2003)
Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong
Electromigration tests on different Cu dual-damascene interconnect tree structures consisting of various numbers of straight via-to-via lines connected at the common middle terminal have been carried...
Chang, Choon Wai, Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong
Failure mechanisms observed in electromigration (EM) stressed dual damascene Cu/SiO₂ interconnects trees were studied and simulated. Failure sites with âmelt patch’ or âcrater’ are...
Research on Polycrystalline Films for Micro- and Nano-Systems (2003)
Polycrystalline films are used in a wide array of micro- and nano-scale devices, for electronic, mechanical, magnetic, photonic and chemical functions. Increasingly, the properties, performance, and...
Metallic Cluster Coalescence: Molecular Dynamics Simulations of Boundary Formation (2003)
Takahashi, A. R., Thompson, Carl V., Carter, W. Craig
During the evaporative deposition of polycrystalline thin films, the development of a tensile stress at small film thicknesses is associated with island coalescence. Several continuum models exist to...
Zang, Keyan, Wang, Lianshan, Chua, Soo-Jin, Thompson, Carl V.
The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN...
Characterization and Modeling of Stress Evolution During Nickel Silicides Formation (2003)
Liew, K.P., Li, Yi, Yeadon, Mark, Bernstein, R., Thompson, Carl V.
An curvature measurement technique was used to characterize the stress evolution during reaction of a Ni film and a silicon substrate to form nickel silicide. Stress changes were measured at each...
Atomistic Simulations of Metallic Cluster Coalescence (2002)
Takahashi, A. R., Thompson, Carl V., Carter, W. Craig
A new computational method is introduced to investigate the stresses developed in the island-coalescence stage of polycrystalline film formation during deposition. The method uses molecular dynamics...
Investigation of the Fundamental Reliability Unit for Cu Dual-Damascene Metallization (2002)
Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong, Wei, F., Hau-Riege, S.P., ...
An investigation has been carried out to determine the fundamental reliability unit of copper dual-damascene metallization. Electromigration experiments have been carried out on straight via-to-via...
Length Effects on the Reliability of Dual-Damascene Cu Interconnects (2002)
Wei, F., Hau-Riege, S.P., Gan, C.L., Thompson, Carl V., Clement, J.J., Tay, H.L., ...
The effects of interconnect length on the reliability of dual-damascene Cu metallization have been investigated. As in Al-based interconnects, the lifetimes of Cu lines increase with decreasing...
Processing, Structure, Properties, and Reliability of Metals for Microsystems (2002)
Research on the processing, structure, properties and reliability of metal films and metallic microdevice elements is reviewed. Recent research has demonstrated that inelastic deformation mechanisms...
Processing, Structure, Properties, and Reliability of Metals for Microsystems (2002)
Research on the processing, structure, properties and reliability of metal films and metallic microdevice elements is reviewed. Recent research has demonstrated that inelastic deformation mechanisms...
Length Effects on the Reliability of Dual-Damascene Cu Interconnects (2002)
Wei, F., Hau-Riege, S.P., Gan, C.L., Thompson, Carl V., Clement, J.J., Tay, H.L., ...
The effects of interconnect length on the reliability of dual-damascene Cu metallization have been investigated. As in Al-based interconnects, the lifetimes of Cu lines increase with decreasing...
Investigation of the Fundamental Reliability Unit for Cu Dual-Damascene Metallization (2002)
Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong, Wei, F., Hau-Riege, S.P., ...
An investigation has been carried out to determine the fundamental reliability unit of copper dual-damascene metallization. Electromigration experiments have been carried out on straight via-to-via...
Atomistic Simulations of Metallic Cluster Coalescence (2002)
Takahashi, A. R., Thompson, Carl V., Carter, W. Craig
A new computational method is introduced to investigate the stresses developed in the island-coalescence stage of polycrystalline film formation during deposition. The method uses molecular dynamics...
Smith,Henry I., Thompson,Carl V.
The objective of this program is to carry out basic research on the phenomenon of surface-energy-driven secondary grain growth (SEDSGG) in thin films on amorphous and single crystal substrates. Means...
Post-Nucleation Heteroepitaxy in Poorly Lattice Matched Systems. (1998)
We have demonstrated a new mechanism for obtaining heteroepitaxial films, Epitaxial Grain Growth (EGG), which can lead to higher quality ultrathin epitaxial films than can be obtained by other...
Post-Nucleation Heteroepitaxy in Poorly Lattice Matched Systems. (1998)
We have investigated the evolution of thin film structures in the earlier stages of film growth. We have also investigated epitaxial grain growth as a new method for obtaining epitaxial films in...