Christian Gerl

High spin polarization of optically-oriented trions in p-doped GaAs-AlGaAs quantum wells (2007)

Wagenhuber, Klaus, Shalygin, Vadim, Niedermeier, Ulrich, Gerl, Christian, Wegscheider, Werner, Korn, Tobias, ...

We performed cw-photoluminescence (PL) measurements on a 15 nm wide p-doped Al0.3Ga0.7As-GaAs-Al0.3Ga0.7As quantum well structure at low temperatures. By irradiating the sample with circularly...

Scattering Induced Spin Separation at Zero Bias (2007)

Ganichev, Sergey, Belkov, Vassilij, Tarasenko, Sergey, Danilov, Sergey, Giglberger, Stephan, Hoffmann, Christoph, ...

We show that in gyrotropic semiconductor structures spin-dependent asymmetry of electron scattering induces a spin separation which, in contrast to the spin Hall effect, does not require an electric...

Spin photocurrents and circular photon drag effect in (110)-grown quantum well structures (2007)

Shalygin, Vadim, Diehl, Helgi, Hoffmann, Christoph, Danilov, Sergey, Herrle, Thomas, Tarasenko, Sergey, ...

The study of spin photocurrents in (110)-grown quantum well structures is reported. The investigated effects comprise the circular photogalvanic effect and so far not observed circular photon drag...

Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells measured by Spin Photocurrents (2007)

Giglberger, Stephan, Golub, Leonid, Belkov, Vassilij, Danilov, Sergey, Schuh, Dieter, Gerl, Christian, ...

The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)-...

Picosecond Polarisation Detector for Infrared and Terahertz Radiation (2007)

Ganichev, Sergey, Danilov, Sergey, Weber, Wolfgang, Schuh, Dieter, Gerl, Christian, Wegscheider, Werner, ...

We report on a room temperature detector of infrared/terahertz laser radiation allowing to measure and characterized the radiation polarization state with picosecond time resolution.

Subnanosecond Ellipticity Detector for Laser Radiation (2007)

Ganichev, Sergey, Kiermaier, Josef, Weber, Wolfgang, Danilov, Sergey, Schuh, Dieter, Gerl, Christian, ...

A room temperature detector of terahertz laser radiation ellipticity has been developed based on the simultaneous measurements of three different photoelectric phenomena: circular photogalvanic...

Zero-bias spin separation (2006)

Ganichev, Sergey, Belkov, Vassilij, Tarasenko, Sergey, Danilov, Sergey, Giglberger, Stephan, Hoffmann, Christoph, ...

The generation, manipulation and detection of spin-polarized electrons in low-dimensional semiconductors are at the heart of spintronics. Pure spin currents, that is, fluxes of magnetization without...

Zero-bias spin separation (2006)

Ganichev, Sergey D., Bel'kov, Vasily V., Tarasenko, Sergey A., Danilov, Sergey N., Giglberger, Stephan, Hoffmann, Christoph, ...

Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current...

Transport properties of a shunted surface superlattice in an external magnetic field (2006)

Feil, Thomas, Gerl, Christian, Wegscheider, Werner

We study the transport through a shunted surface superlattice system in the presence of an external magnetic field. Such a system consists of a weakly doped, instability free superlattice (shunt)...

Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions (2006)

Moser, Jürgen, Zenger, Marcus, Gerl, Christian, Schuh, Dieter, Meier, R., Chen, PeiFeng, ...

We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnetoresistance effect (TMR) was probed for different types of Fe/GaAs interfaces. For interfaces cleaned...

Carbon-doped high mobility two-dimensional hole gases on (110) faced GaAs (2005)

Schmult, Stefan, Gerl, Christian, Wurstbauer, Ursula, Mitzkus, C., Wegscheider, Werner

Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs...

Carbon doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 10^6 cm^2/Vs (2005)

Gerl, Christian, Schmult, S., Tranitz, H., Mitzkus, C., Wegscheider, Werner

Utilizing a carbon filament doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x...