Enhancement of He-induced cavities in silicon by hydrogen plasma treatment (2005)
L. Liu, C., Ntsoenzok, E., Vengurlekar, A., Ashok, S., Alquier, D., O. Ruault, M., ...
The formation of subsurface nm-size cavities in Si from He implantation followed by thermal anneal involves a complex interaction of He with vacancy clusters. We have attempted to promote cavity...
Enhancement of He-induced cavities in silicon by hydrogen plasma treatment (2005)
L. Liu, C., Ntsoenzok, E., Vengurlekar, A., Ashok, S., Alquier, D., O. Ruault, M., ...
The formation of subsurface nm-size cavities in Si from He implantation followed by thermal anneal involves a complex interaction of He with vacancy clusters. We have attempted to promote cavity...
Optimization of the fabrication of sealed capacitive transducers using surface micromachining (2004)
Belgacem, B., Alquier, D., Muralt, P., Baborowski, J., Lucas, S., Jerisian, R.
Processing issues for the fabrication of capacitive micromachined ultrasonic transducer (cMUT) arrays have been studied using surface micromachining. This work focuses on the critical steps of...
On the Asymmetrical Behavior of Transient Enhanced Diffusion in Pre-Amorphized Si Wafers (1998)
Alquier, D., Cowern, N.E.B., Pichler, P., Armand, C., Martinez, A., Mathiot, D., ...
We have studied by SIMS the diffusion of boron in Ge-preamorphised silicon over a range of anneal temperatures and times, focusing on the influence of the depth of the boron profile relative to the...