D. Coquillat

Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications (2009)

Knap, W., Dyakonov, M., Coquillat, D., Teppe, F., Dyakonova, N., Łusakowski, J., ...

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the...

Terahertz Radiation Detection by Field Effect Transistor in Magnetic Field (2009)

Boubanga-Tombet, S., Sakowicz, M., Coquillat, D., Teppe, F., Knap, W., Dyakonov, M. I., ...

We report on terahertz radiation detection with InGaAs/InAlAs Field Effect Transistors in quantizing magnetic field. The photovoltaic detection signal is investigated at 4.2 K as a function of the...

Photonic crystals comprising selectively grown flat-topped and sharp-tipped GaN pyramids (2007)

Coquillat, D, Boubanga Tombet, S A, Liu, C, Betjka, K, Watson, I M, ...

Photonic crystals comprising selectively grown flat-topped and sharp-tipped GaN pyramids (2007)

Coquillat, D, Boubanga Tombet, S A, Liu, C, Betjka, K, Watson, I M, ...

Photonic crystals comprising selectively grown flat-topped and sharp-tipped GaN pyramids (2007)

Coquillat, D., Boubang, T.S.A., Liu, C., Bejtka, K., Watson, I.M., ...

Selective area growth offers the promise of producing III-nitride photonic crystals (PhCs) without dry etching and concomitant surface damage. Two PhC structures were studied, one comprising an array...

Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power (2006)

Tauk, R., Teppe, F., Boubanga, S., Coquillat, D., Knap, W., Meziani, Y. M., ...

Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120-300 nm have been studied as room temperature plasma wave detectors of 0.7 THz electromagnetic radiation....

Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structures (2005)

Coquillat, D, Torres, J, Legros, R, Lascaray, J P, Liu, C, ...

Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structures (2005)

Coquillat, D, Torres, J, Legros, R, Lascaray, J P, Liu, C, ...

Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure (2005)

Coquillat, D., Torres, J., DYerville, M.L.V., Legros, R., Lascaray, J.P., Liu, C., ...

Angular-dependent reflection measurements were used to map out the dispersion relations of the resonant Bloch modes, and the angular dispersion of the phonon modes, in a photonic crystal consisting...

Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure (2005)

Coquillat, D., Torres, J., DYerville, M.L.V., Legros, R., Lascaray, J.P., Liu, C., ...

Angular-dependent reflection measurements were used to map out the dispersion relations of the resonant Bloch modes, and the angular dispersion of the phonon modes, in a photonic crystal consisting...

Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure (2005)

Coquillat, D., Torres, J., DYerville, M.L.V., Legros, R., Lascaray, J.P., Liu, C., ...

Angular-dependent reflection measurements were used to map out the dispersion relations of the resonant Bloch modes, and the angular dispersion of the phonon modes, in a photonic crystal consisting...

Heterostructure of binaries II-VI semiconductors ZnTe and ZnSe / III-V (GaAs, InP, GaSb) (1993)

Haidoux, A., Tomasini, P., Maurin, M., Tedenac, J., Coquillat, D., Ribayrol, A., ...

Epitaxial ZnSe, ZnTe and multilayers have been grown on III-V (InP, GaAs and GaSb) substrates by organometallic vapor phase epitaxy. First, the OMVPE growth technique used is described. The...

Magnetoreflectivity study of type I - type II transition in CdTe/(Cd, Mn)Te quantum wells (1993)

Ribayrol, A., Coquillat, D., Kavokin, A., Lascaray, J., Zhou, H., Sotomayor Torres, C., ...

The magnetic field induced type I - type II transition in a 20-Å-thick CdTe/Cd0.875Mn0.125Te single quantum well has been documented by the resonance light reflection measurements. The pronounced...

Heterostructure of binaries II-VI semiconductors ZnTe and ZnSe / III-V (GaAs, InP, GaSb) (1993)

Haidoux, A., Tomasini, P., Maurin, M., Tedenac, J., Coquillat, D., Ribayrol, A., ...

Epitaxial ZnSe, ZnTe and multilayers have been grown on III-V (InP, GaAs and GaSb) substrates by organometallic vapor phase epitaxy. First, the OMVPE growth technique used is described. The...

Magnetoreflectivity study of type I - type II transition in CdTe/(Cd, Mn)Te quantum wells (1993)

Ribayrol, A., Coquillat, D., Kavokin, A., Lascaray, J., Zhou, H., Sotomayor Torres, C., ...

The magnetic field induced type I - type II transition in a 20-Å-thick CdTe/Cd0.875Mn0.125Te single quantum well has been documented by the resonance light reflection measurements. The pronounced...

Heterostructure of binaries II-VI semiconductors ZnTe and ZnSe / III-V (GaAs, InP, GaSb) (1993)

Haidoux, A., Tomasini, P., Maurin, M., Tedenac, J., Coquillat, D., Ribayrol, A., ...

Epitaxial ZnSe, ZnTe and multilayers have been grown on III-V (InP, GaAs and GaSb) substrates by organometallic vapor phase epitaxy. First, the OMVPE growth technique used is described. The...

Magnetoreflectivity study of type I - type II transition in CdTe/(Cd, Mn)Te quantum wells (1993)

Ribayrol, A., Coquillat, D., Kavokin, A., Lascaray, J., Zhou, H., Sotomayor Torres, C., ...

The magnetic field induced type I - type II transition in a 20-Å-thick CdTe/Cd0.875Mn0.125Te single quantum well has been documented by the resonance light reflection measurements. The pronounced...

CONCENTRATION DEPENDENCE OF THE ZEEMAN SPLITTING OF EXCITON IN Zn1-xMnxTe AND Cd1-xMnxTe (1988)

Coquillat, D., Desjardins-Deruelle, M., Lascaray, J., Deportes, J., Bhattacharjee, A.

Magnetoreflectivity and magnetization measurements were performed in Zn1-xMnxTe and Cd1-xMnxTe for 0.02 ≤x≤0.73 at 4.5 K in fields up to 5.5 T. Zeeman splitting versus average moment per...

CONCENTRATION DEPENDENCE OF THE ZEEMAN SPLITTING OF EXCITON IN Zn1-xMnxTe AND Cd1-xMnxTe (1988)

Coquillat, D., Desjardins-Deruelle, M., Lascaray, J., Deportes, J., Bhattacharjee, A.

Magnetoreflectivity and magnetization measurements were performed in Zn1-xMnxTe and Cd1-xMnxTe for 0.02 ≤x≤0.73 at 4.5 K in fields up to 5.5 T. Zeeman splitting versus average moment per...

CONCENTRATION DEPENDENCE OF THE ZEEMAN SPLITTING OF EXCITON IN Zn1-xMnxTe AND Cd1-xMnxTe (1988)

Coquillat, D., Desjardins-Deruelle, M., Lascaray, J., Deportes, J., Bhattacharjee, A.

Magnetoreflectivity and magnetization measurements were performed in Zn1-xMnxTe and Cd1-xMnxTe for 0.02 ≤x≤0.73 at 4.5 K in fields up to 5.5 T. Zeeman splitting versus average moment per...

Activity and Cross-Reactivity of Antibodies Induced in Mice by Immunization with a Group B Meningococcal Conjugate

Coquillat, D., Bruge, J., Danve, B., Latour, M., Hurpin, C., Schulz, D., ...

The capsular polysaccharide of group B Neisseria meningitidis is composed of a linear homopolymer of α(2-8) N-acetyl neuraminic acid or polysialic acid (PSA) that is also carried by isoforms of the...

Activity and Cross-Reactivity of Antibodies Induced in Mice by Immunization with a Group B Meningococcal Conjugate

Coquillat, D., Bruge, J., Danve, B., Latour, M., Hurpin, C., Schulz, D., ...

The capsular polysaccharide of group B Neisseria meningitidis is composed of a linear homopolymer of α(2-8) N-acetyl neuraminic acid or polysialic acid (PSA) that is also carried by isoforms of the...