D. Deresmes

Langmuir-Blodgett monolayers of InP quantum dots with short chain ligands (2006)

Lambert, Karel, Wittebrood, Lieve, Moreels, Iwan, DERESMES, D, GRANDIDIER, B, Hens, Zeger

Direct Evidence for Shallow Acceptor States with Nonspherical Symmetry in GaAs (2005)

Mahieu, G., Grandidier, B., Deresmes, D., Nys, J. P., Stiévenard, D., Ebert, Ph.

This version is available at the following Publisher URL: http://prl.aps.org

Evolution of the density of states on going from a two- to a zero-dimensional semiconductor (2004)

Hens, Zeger, GRANDIDIER, B, DERESMES, D, ALLAN, G, DELERUE, C, STIEVENARD, D, ...

Why do (2x4) GaAs and InAs (001) surfaces exposed to phosphorus have so different strain behavior ? (2002)

Wallart, X., Priester, C., Deresmes, D., Gehin, T., Mollot, F.

Growth of strained GaSub 1-xIn Sub x players on GaP (001) by gas source molecular beam epitaxy similarities and differences with the growth of strained arsenides (2001)

Wallart, X., Deresmes, D., Mollot, F.

Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by Gas Source Molecular Beam Epitaxy (2001)

Wallart, X., Deresmes, D., Mollot, F.

Oxygen in Gallium Arsenide. (1998)

Bourgoin, J. C., Stievenard, D., Deresmes, D., Mimila Arroyo, J.

The evolution of the deep level transient spectroscopy spectrum associated with the EL2 defect in epitaxial as well as bulk GaAs materials when they are contaminated by oxygen has been examined in...