Durini, D., Dreiner, S., Vogt, H.
To solve charge transfer efficiency (CTE) problems present in photogate (PG) pixels fabricated in single polysilicon layer standard CMOS processes, integration of an overlapping ITO layer is here...
Pulsed time-of-flight 3D-CMOS imaging using photogate-based active pixel sensors (2009)
Spickermann, A., Durini, D., Bröcker, S., Brockherde, W., Grabmaier, A.
A novel time-of-flight (ToF) 3D-image sensor based on photogate (PG) active pixel structures fabricated in a standard 0.35µm CMOS process is presented. Distance measurements are performed using a...
Time-of-flight 3-D imaging pixel structures in standard CMOS processes (2008)
Durini, D., Brockherde, W., Ulfig, W., Hosticka, B.J.
In this investigation we examine different pixel structures and readout principles to be used in imagers fabricated in standard CMOS processes, for example, the 0.5 mu m and 0.35 mu m processes...
Charge-injection photogate pixel fabricated in CMOS silicon-on-insulator technology (2008)
Durini, D., Brockherde, W., Hosticka, B.J.
Concept, theoretical analysis, and experimental results obtained from a charge-injection photogate (CI-PG) pixel detector fabricated in CMOS silicon-on-insulator (SOI) technology are presented. The...
High sensitive UV-enhanced linear CMOS photosensor (2008)
Durini, D., Özkan, E., Brockherde, W., Hosticka, B.J.
This contribution describes a highly sensitive UVenhanced linear CMOS photosensor which exhibits very low noise. The sensor features on-chip readout and control electronics, global synchronous...
Photodetector structures for standard CMOS imaging applications (2007)
In this investigation we show how a standard 0.5µm twin-well CMOS process can be used for CMOS imaging. The process features a single-polysilicon layer, as well as three metal layers, and it is...
SOI pixel detector based on CMOS time-compression charge-injection (2007)
Durini, D., Brockherde, W., Hosticka, B.J.
Concept and experimental results obtained from a pixel detector based on CMOS Time-Compression Charge-Injection-Devices (TC-CID) with a huge internal photocurrent amplification (~104), fabricated in...
MOS-capacitor based CMOS time-compression photogate pixel for time-of-flight imaging (2007)
Durini, D., Brockherde, W., Hosticka, B.J.
In this investigation we study different readout possibilities if using a metal-oxide-semiconductor capacitor (MOS-C) as a photodetector in a standard 0.5µm twin-well CMOS process. The pixel readout...
Durini, D., Enowbi, K.E., Brockherde, W., Hosticka, B.J.
An experimental comparison between Time-Compression (TC) photogate pixel detectors fabricated in both, Silicon-on-Insulator (SOI) CMOS and 0.5µm standard CMOS processes, respectively, are presented...
Durini, D., Kemna, A., Brockherde, W., Hosticka, B.J.
In this work, theoretical modeling and simulations of a 'time compression' parametric amplification pixel array to be used in CMOS imaging for low-level or near IR radiation are presented. The...
Numerical simulation of resonant interaction of SCWs with acoustic modes in n-GaAs thin film (2005)
Garcia, B.A., Grimalsky, V., Gutierrez, D.E., Durini, D.
We have investigated the resonant interaction of space charge waves (SCWs) with acoustic modes in GaAs films via deformation potential for first and second harmonic. The film has bias electric field...