High Field Phenomena of Qubits (2009)
Van Tol, J., Morley, G. W., Takahashi, S., McCamey, D. R., Boehme, C., Zvanut, M. E.
Electron and nuclear spins are very promising candidates to serve as quantum bits (qubits) for proposed quantum computers, as the spin degrees of freedom are relatively isolated from their...
Electrically detected magnetic resonance using radio-frequency reflectometry (2009)
Huebl, H., Starrett, R. P., McCamey, D. R., Ferguson, A. J.
The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of a LCR tank circuit. Applied to a silicon field-effect transistor at millikelvin...
Fast nuclear spin hyperpolarization of phosphorus in silicon (2008)
McCamey, D. R., Van Tol, J., Morley, G. W., Boehme, C.
We experimentally demonstrate a method for obtaining nuclear spin hyperpolarization, that is, polarization significantly in excess of that expected for a thermal equilibrium. By exploiting a modified...
Long spin coherence in silicon with an electrical spin trap readout (2008)
Morley, G. W., McCamey, D. R., Seipel, H. A., Van Tol, J., Boehme, C.
Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that...
Huebl, H., McCamey, D. R., Duty, T., Ferguson, A. J., Clark, R. G., ...
We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing...
Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields (2008)
McCamey, D. R., Morley, G. W., Seipel, H. A., Brunel, L. C., Van Tol, J., Boehme, C.
An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline silicon and silicon...
Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures (2006)
McCamey, D. R., Huebl, H., Brandt, M. S., Hutchison, W. D., McCallum, J. C., Clark, R. G., ...
We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose...
Ion implanted Si:P double-dot with gate tuneable interdot coupling (2006)
Chan, V. C., Buehler, T. M., Ferguson, A. J., McCamey, D. R., Reilly, D. J., Dzurak, A. S., ...
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to...
An ion-implanted silicon single-electron transistor (2005)
Chan, V. C., McCamey, D. R., Buehler, T. M., Ferguson, A. J., Reilly, D. J., Dzurak, A. S., ...
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are...
McCamey, D. R., Francis, M., McCallum, J. C., Hamilton, A. R., Greentree, A. D., Clark, R. G.
Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation...