Influence of passivation on High-Power AlGaN/GaN HEMT devices at 10GHz. (2004)
Ducatteau, D., Werquin, M., Gaquière, C., Théron, D., Martin, T., Delos, E., ...
AlGaN/GaN high electron mobility transistors (HEMTS on SiC) were characterized before and after SiO2/Si3N4 passivation. DC, small signal, pulsed and large signal measurements were performed. We...
Recent Developments and Trends in GaN HFETs (2004)
Théron, D., Gaquière, C., De Jaeger, J.C., Delage, S. L.
This paper reviews the main challenges and results concerning GaN HFET research and development in Europe. Today several actors are working to allow the emergence of an European source for this...
Ardouin, M., Bonte, B., Zaknoune, M., Théron, D., Cordier, Y., Bollaert, S., ...
This paper presents the influence of the recess extension on the power performance of double heterostructure Al0.65In0.35As/In0.35Ga0.65As/GaAs metamorphic HEMT’s in the millimeter wave range....
Théron, D., Cordier, Y., Wallart, X., Bollaert, S., Zaknoune, M., Boudrissa, M., ...
The paper introduces a simple and efficient approach for the modelling of low-frequency dispersive phenomena in FETs. It is based on the definition of a virtual, non-dispersive associated device...