Atomic Scale Memory at a Silicon Surface (2002)
Bennewitz, R., Crain, J. N., Kirakosian, A., Lin, J. -L., McChesney, J. L., Petrovykh, D. Y., ...
The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites...
Lin, J.-L., Petrovykh, D.Y., Kirakosian, A., Rauscher, H., Himpsel, F.J., Dowben, Peter A.
Linear arrays of 3 nm wide Fe stripes with 15 nm spacing are fabricated by self-assembly. They are formed by photolysis of ferrocene that is selectively adsorbed between CaF2 stripes. An ultraviolet...
Enhanced Spin Polarization of Conduction Electrons in Ni, explained by comparison with Cu (2000)
Altmann, K. N., Petrovykh, D. Y., Mankey, G. J., Shannon, Nic, Gilman, N., Hochstrasser, M., ...
The spin-split Fermi level crossings of the conduction band in Ni are mapped out by high-resolution photoemission and compared to the equivalent crossing in Cu. The area of the quasiparticle peak...
Chemical and Electronic Properties of Sulfer-Passivated InAs Surfaces (1998)
Petrovykh, D. Y., Yang, M. J., Whitman, L. J.
Treatment with ammonium sulfide [(NH4)2Sx] solutions is used to produce model passivated InAs (001) surfaces with well-defined chemical and electronic properties. The passivation effectively removes...