2.5 V passive CMOS mixer with 20 dBm P1 dB compression (2008)
De Backer, E, Bauwelinck, J, Melange, C, Matei, E, Ossieur, P, Qiu, X, ...
A passive CMOS downconversion mixer with LO buffer is presented in 0.25 mu m SiGe BiCMOS using a 2.5 V supply. With a 60 MHz RF signal input, measurements show that the conversion loss is 2.9 dB, the...
2.5 V 35 dBm IIP3 75 MHz sixth-order active RC filter (2008)
De Backer, E, Bauwelinck, J, Melange, C, Matei, E, Ossieur, P, Qiu, X, ...
A differential sixth-order Butterworth Sallen-Key lowpass filter in 0.25 mu m SiGe BiCMOS, using a 2.5 V supply, is presented. The filter has a 75 MHz cutoff frequency and an attenuation of more than...
High dynamic range 60 MHz powerline front-end IC (2008)
Bauwelinck, J, De Backer, E, Melange, C, Matei, E, Ossieur, P, Qiu, X, ...
Presented for the first time, is a novel broadband powerline front-end realised in 0.25 mu m SiGe BiCMOS with superior performance. The frequency range of the transmitter (TX) and the direct...
Circuit provides low-cost QAM mapping and translation (2007)
Demuytere, P, Melange, C, Matei, E, De Backer, E, Bauwelinck, J, Vandewege, J
1.25 Gbit/s ITU-T G.984.2 burst-mode transimpedance amplifier without reset pins (2007)
Ossieur, P, De Ridder, T, Bauwelinck, J, De Backer, E, Gillis, J, Qiu, X, ...
A DC-coupled burst-mode transimpedance amplifier including fast automatic gain control is presented. By employing common-mode level signalling, a reset signal is provided without adding additional...
Plasma damage in HIMOSTM non-volatile memories (NVM) (2004)
Lowe, A, De Backer, E, Boonen, S, Yao, T, Van Houdt, Jan, ...
Plasma charging damage reduction in IC processing by a self-balancing interconnect (2004)
Wang, Zhiming; U0042846, Ackaert, J, Salm, C, Kuper, FG, De Backer, E
In this paper, a novel first order self-balancing interconnect layout design is proposed for reducing plasma-process induced charging damage (P2ID) in modern CMOS processes. According to the...
Plasma-charging damage of floating MIM capacitors (2004)
Wang, ZC, Ackaert, J, Salm, C, Kuper, FG, Tack, Michaël; U0044150, De Backer, E, ...
In this paper, the mechanism of plasma-charging damage (PCD) of metal-insulator-metal (MIM) capacitors as well as possible protection schemes are discussed. A range of test structures with different...
Plasma-charging damage of floating MIM capacitors (2004)
Wang, Z., Ackaert, J.G.G., Salm, C., Kuper, F.G., Tack, M., De Backer, E., ...
In this paper, the mechanism of plasma-charging damage (PCD) of metal-insulator-metal (MIM) capacitors as well as possible protection schemes are discussed. A range of test structures with different...
Plasma charging damage reduction in IC processing by a self-balancing interconnect (2004)
Wang, Z., Ackaert, J.G.G., Salm, C., Kuper, F.G., De Backer, E.
A small TPC has been read out by means of a Medipix2 chip as direct anode. A Micromegas foil was placed Click to view the MathML source above the chip, and electron multiplication occurred in the...
Wang, Z., Ackaert, J.G.G., Salm, C., Kuper, F.G., Bessemans, K., De Backer, E.
Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes. All the previous studies, however,...
Charging damage in floating metal-insulator-metal capacitors (2002)
Ackaert, Jan, Wang, Zhichun, De Backer, E., Coppens, P.
In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of...
Plasma damage in floating metal-insulator-metal capacitors (2002)
Ackaert, J.G.G., Wang, Z., De Backer, E., Coppens, P.
In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reported. CID does not necessarily lead to direct yield loss, but may also induce latent damage leading to...
Ackaert, J.G.G., Wang, Z., De Backer, E., Salm, C.
In this paper, we compare the HC stress and oxide breakdown results with the fast and commonly used gate leakage current measurement A clear correlation is found between low levels of gate leakage...
Wang, Z., Ackaert, J.G.G., Salm, C., De Backer, E., Zawalski, W.
In this paper, we compare the hot carrier (HC) stress and oxide breakdown results with the fast and commonly used gate leakage current measurement. A clear correlation is found between low levels of...
Ackaert, J., Wang, Z., De Backer, E., Colson, P., Coppens, P.
In this paper, charging induced damage (CID) to metal-insulator-metal-capacitator (MIMC), is reported. The damage is caused by the build up of charges on an oxide surface during a water rinsing step....
Indocyanine green angiography in Sorsby's fundus dystrophy. (2000)
Lafaut, Bart, DE BACKER, E, KOHNO, T, Delaey, Jean, Meire, Françoise
Sorsby fundus dystrophy without a mutation in the TIMP-3 gene. (2000)
ASSINK, JJM, DE BACKER, E, TEN BRINK, JB, KOHNO, T, DE JONG, PTVM, BERGEN, AAB, ...