Assaf, H., Ntsoenzok, E., Sauvage, T., Ashok, S.
Thermally grown silicon oxide layer was implanted at room temperature with 300keV Xe at fluences ranging from 0.5 to 5x10$^16$Xe/cm$^2$. Bubbles created after Xe-implantation provided a low-k silicon...
Assaf, H., Ntsoenzok, E., Sauvage, T., Ashok, S.
Thermally grown silicon oxide layer was implanted at room temperature with 300keV Xe at fluences ranging from 0.5 to 5x10$^16$Xe/cm$^2$. Bubbles created after Xe-implantation provided a low-k silicon...
Assaf, H., Ntsoenzok, E., Sauvage, T., Ashok, S.
Thermally grown silicon oxide layer was implanted at room temperature with 300keV Xe at fluences ranging from 0.5 to 5x10$^16$Xe/cm$^2$. Bubbles created after Xe-implantation provided a low-k silicon...
Enhancement of He-induced cavities in silicon by hydrogen plasma treatment (2005)
L. Liu, C., Ntsoenzok, E., Vengurlekar, A., Ashok, S., Alquier, D., O. Ruault, M., ...
The formation of subsurface nm-size cavities in Si from He implantation followed by thermal anneal involves a complex interaction of He with vacancy clusters. We have attempted to promote cavity...
Enhancement of He-induced cavities in silicon by hydrogen plasma treatment (2005)
L. Liu, C., Ntsoenzok, E., Vengurlekar, A., Ashok, S., Alquier, D., O. Ruault, M., ...
The formation of subsurface nm-size cavities in Si from He implantation followed by thermal anneal involves a complex interaction of He with vacancy clusters. We have attempted to promote cavity...
Thermal evolution of deuterium in 4H-SiC (2002)
Delamare, Romain, Ntsoenzok, E., Sauvage, T., Shiryaev, A., Van Veen, A., Dubois, Ch.
4H-SiC samples were implanted at room temperature with 30 keV D + ions at a dose of 5x10 16 D + /cm². Nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS) measurements were...
Thermal evolution of deuterium in 4H-SiC (2002)
Delamare, Romain, Ntsoenzok, E., Sauvage, T., Shiryaev, A., Van Veen, A., Dubois, Ch.
4H-SiC samples were implanted at room temperature with 30 keV D + ions at a dose of 5x10 16 D + /cm². Nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS) measurements were...
Thermal evolution of deuterium in 4H-SiC (2002)
Delamare, Romain, Ntsoenzok, E., Sauvage, T., Shiryaev, A., Van Veen, A., Dubois, Ch.
4H-SiC samples were implanted at room temperature with 30 keV D + ions at a dose of 5x10 16 D + /cm². Nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS) measurements were...
Thermal evolution of deuterium in 4H-SiC (2002)
Delamare, Romain, Ntsoenzok, E., Sauvage, T., Shiryaev, A., Van Veen, A., Dubois, Ch.
4H-SiC samples were implanted at room temperature with 30 keV D + ions at a dose of 5x10 16 D + /cm². Nuclear reaction analysis (NRA) and secondary ion mass spectroscopy (SIMS) measurements were...