E. P. Kvam

Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy (2006)

Capano, M. A., Kim, B. C., Smith, A. R., Kvam, E. P., Tsoi, S., Ramdas, A. K.

Cubic (3C) silicon carbide (SiC) epilayers grown on Si substrates by chemical vapor deposition, characterized using transmission electron microscopy (TEM), high-resolution x-ray diffraction (HRXRD),...