Solution-processed Ambipolar Organic Field-effect Transistors And Inverters (2003)
Hummelen, J.C., Meijer, E.J., Leeuw, D.M. De, Setayesh, S., Veenendaal, E. Van, ...
Solution-processed Ambipolar Organic Field-effect Transistors And Inverters (2003)
Hummelen, J.C., Meijer, E.J., Leeuw, D.M. De, Setayesh, S., Veenendaal, E. Van, ...
Solution-processed ambipolar organic field-effect transistors and inverters (2003)
Meijer, E.J., Leeuw, D.M. De, Setayesh, S., Veenendaal, E. Van, Blom, P.W.M., ...
There is ample evidence that organic field-effect transistors have reached a stage where they can be industrialized, analogous to standard metal oxide semiconductor (MOS) transistors. Monocrystalline...
A monte carlo study of etching in the presence of a mask junction (2001)
Veenendaal, E. Van, Cuppen, H., Suchtelen, J. Van, Nijdam, A.J., Elwenspoek, M.C., ...
Anisotropic wet chemical etching of silicon in alkaline solutions is a key technology in the fabrication of sensors and actuators. In this technology etching through masks is used for fast and...
Monte carlo simulation of wet chemical etching of silicon (2001)
Veenendaal, E. Van, Suchtelen, J. Van, Beurden, P. Van, Cuppen, H., Nijdam, A.J., ...
The aim of this paper is to demonstrate that Monte Carlo simulation can be a powerful tool to understand wet chemical etching of silicon. We have performed Monte Carlo simulations of etching of three...
Nijdam, A.J., Gardeniers, J.G.E., Berenschot, J.W., Veenendaal, E. Van, Suchtelen, J. Van, Elwenspoek, M.C.
Anisotropic wet-chemical etching of silicon in alkaline solutions is a key technology in the fabrication of sensors and actuators. In earlier work it was found that not only the etchant and...
Nijdam, A.J., Veenendaal, E. Van, Cuppen, H., Suchtelen, J. Van, Reed, M.L., Gardeniers, J.G.E., ...
On Si{100} surfaces etched in anisotropic etchants such as aqueous solutions KOH and TMAH, pyramidal etch hillocks are frequently found. Besides these hillocks, we have investigated hillocks that...
Nijdam, A.J., Veenendaal, E. Van, Cuppen, H., Suchtelen, J. Van, Reed, M.L., Gardeniers, J.G.E., ...
A Monte Carlo study of etching in the presence of a mask junction (2000)
Veenendaal, E. Van, Cuppen, H., Suchtelen, J. Van, Nijdam, A.J., Elwenspoek, M.C., ...
Nijdam, A.J., Veenendaal, E. Van, Gardeniers, J.G.E., Kentgens, A.P.M., Nachtegaal, G.H., Elwenspoek, M.C.
We present results of 29Si-nuclear magnetic resonance experiments on a large number of KOH solutions in which silicon has been dissolved. The goal of the experiments is to clarify the chemical...
A monte carlo study of dislocation growth and etching of crystals (2000)
Cuppen, H., Veenendaal, E. Van, Suchtelen, J. Van, Vlieg, E.
Veenendaal, E. Van, Beurden, P. Van, Vlieg, E.
We have analyzed the asymmetry between growth and dissolution using Monte Carlo simulations of flat and vicinal (100) surfaces of a Kossel crystal. We find that at a high driving force dissolution is...
Simulation of anisotropic wet chemical etching using a physical model (2000)
Veenendaal, E. Van, Nijdam, A.J., Suchtelen, J. Van, Sato, K., Gardeniers, J.G.E., ...
We present a method to describe the orientation dependence of the etch rate in anisotropic etching solutions of silicon, or any other single crystalline material, by analytical functions. The...
Veenendaal, E. Van, Suchtelen, J. Van, Sato, K., Nijdam, A.J., Gardeniers, J.G.E., ...
In Part I we introduced a construction method for analytical orientation dependent growth and etch rate functions. In this article, this network construction principle is applied to wet chemical...
Simulation of anisotropic wet-chemical etching using a physical model (1999)
Suchtelen, J. Van, Sato, K., Veenendaal, E. Van, Nijdam, A.J., Gardeniers, J.G.E., ...
We present a method to describe the orientation dependence of the etch rate of silicon, or any other single crystalline material, in anisotropic etching solutions by analytical functions. The...