F. J. Himpsel

Publication List Details

Period

1993 - 2004

Number

25

Co-Authors

Dipole-induced structure in aromatic-terminated self-assembled monolayers: A study by near edge x-ray absorption fine structure spectroscopy (2004)

Luk, Yan-Yeung, Abbott, Nicholas L., Crain, J.N., Himpsel, F.J.

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X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN (2003)

Rickert, K.A., Ellis, A.B., Himpsel, F.J., Lu, H., Schaff, W., Redwing, J.M., ...

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Measurement of electron wave functions and confining potentials via photoemission (2002)

Mugarza, A., Ortega, J. E., Himpsel, F. J., De Abajo, F. J. Garcia

Wave functions and electron potentials of laterally-confined surface states are determined experimentally by means of photoemission from stepped Au(111) surfaces. Using an iterative formalism...

Gd disilicide nanowires attached to Si(111) steps (2002)

McChesney, J. L., Kirakosian, A., Bennewitza, R., Crain, J. N., Lin, J. -L., Himpsel, F. J.

Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step...

Fermi Surfaces of Surface States on Si(111) + Ag, Au (2002)

Crain, J. N., Altmann, K. N., Bromberger, Ch., Himpsel, F. J.

Metallic surface states on semiconducting substrates provide an opportunity to study low-dimensional electrons decoupled from the bulk. Angle resolved photoemission is used to determine the Fermi...

Atomic Scale Memory at a Silicon Surface (2002)

Bennewitz, R., Crain, J. N., Kirakosian, A., Lin, J. -L., McChesney, J. L., Petrovykh, D. Y., ...

The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites...

Empty Orbitals of Adsorbates Determined by Inverse UV-Photoemission. (2002)

Himpsel,F. J., Fauster,Th.

We have determined the position of the lowest empty orbitals of CO and O chemisorbed on Ni(111) by inverse photo-emission in the ultraviolet. The 2 pi orbital of CO is lowered by 4.5eV upon...

Oxidation of GaAs(110): New Results and Models, (2002)

Landgren,G., Ludeke,R., Morar,J. F., Jugnet,Y., Himpsel,F. J.

The oxidation of ultrahigh-vacuum-cleaved GaAs(110) surfaces has been studied with high-resolution, core-level photoemission excited with synchrotron radiation. The oxidation is spatially and...

Current status of the Synchrotron Radiation Center (2002)

Moore, C.J., Altmann, K.N., Bisognano, J.J., Bosch, R.A., Eisert, D., Fisher, M., ...

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X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN (2002)

Kim, Jong Kyu, Lee, Jong-Lam, Rickert, K.A., Ellis, A.B., Himpsel, F.J., Dwikusuma, F., ...

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n-GaN surface treatments for metal contacts studied via X-ray photoemission spectroscopy (2002)

Rickert, K.A., Ellis, A.B., Himpsel, F.J., Jingxi Sun, Kuech, Thomas F.

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Self-assembled Fe nanowires using organometallic chemical vapor deposition and CaF2 masks on stepped Si(111) (2001)

Lin, J.-L., Petrovykh, D.Y., Kirakosian, A., Rauscher, H., Himpsel, F.J., Dowben, Peter A.

Linear arrays of 3 nm wide Fe stripes with 15 nm spacing are fabricated by self-assembly. They are formed by photolysis of ferrocene that is selectively adsorbed between CaF2 stripes. An ultraviolet...

Functionalization of silicon step arrays II: Molecular orientation of alkanes and DNA (2001)

Crain, J.N., Kirakosian, A., Lin, J.-L., Yuedong Gu, Shah, R.R., Abbott, Nicholas L., ...

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Enhanced Spin Polarization of Conduction Electrons in Ni, explained by comparison with Cu (2000)

Altmann, K. N., Petrovykh, D. Y., Mankey, G. J., Shannon, Nic, Gilman, N., Hochstrasser, M., ...

The spin-split Fermi level crossings of the conduction band in Ni are mapped out by high-resolution photoemission and compared to the equivalent crossing in Cu. The area of the quasiparticle peak...

Selective adsorption of metallocenes on clean and chemically modified Si(111) surfaces (1999)

Lin, J.-L., Rauscher, H., Kirakosian, A., Himpsel, F.J., Dowben, Peter A.

Metallocene adsorption on clean Si(111) and CaF2/CaF1/Si(111) substrates has been investigated with scanning tunneling microscopy. The surface chemical composition is found to strongly change the...

Orbital character of O 2p unoccupied states near the Fermi level in CrO2 (1999)

Stagarescu, C. B., Su, X., Eastman, D. E., Altmann, K. N., Himpsel, F. J., Gupta, A.

The orbital character, orientation, and magnetic polarization of the O 2$p$ unoccupied states near the Fermi level ($E_F$) in CrO$_2$ was determined using polarization-dependent X-ray absorption...

Chemical bonding and electronic properties of SeS2-treated GaAs(100) (1999)

Jingxi Sun, Dong Ju Seo, O'Brien, W.L., Himpsel, F.J., Ellis, A.B., Kuech, Thomas F.

This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying...

ALE Project. (1998)

Gates, S. M., Himpsel, F. J., Iyer, S. S., McFeely, F. R., Sedgwick, T. O.

Using alternating exposures of Si2H6 and Si2C16, very thin Si layers have been grown on the Si(100) surface at temperatures (T) as low as 475 degC. Although this growth method is not truly...

Quarterly Report for ALE Project, Contract Number N00014-91-C-0080 (IBM). (1998)

Gates, S. M., Grutzmacher, D., Himpsel, F. J., Iyer, S. S., Koleskoe, D. D.

Thin Si films have been grown isothermally on Ge(100) substrates using alternating exposures Of Si2H6 and Si2Cl6, maintaining chlorine and hydrogen surface termination. At 465 deg C, film growth rate...

ALE Project. (1998)

Gates, S. M., Himpsel, F. J., Iyer, S. S., Koleske, D. D., Lapiano-Smith, D.

The general goal of this work is to identify the chemical species that are present at the surface during atomic layer epitaxy (ALE). Particularly interesting is the nature of the passivation layer...

Unoccupied surface electronic structure of Gd(0001) (1994)

Li, Dongqi, Dowben, Peter A., Ortega, J.E., Himpsel, F.J.

The unoccupied surface electronic structure of Gd(0001) was investigated with high-resolution inverse-photoemission spectroscopy. An empty surface state near EF is observed at Γ¯. Two other...

Experimental determination of the unoccupied bands of W(110) (1993)

Li, Dongqi, Dowben, Peter A., Ortega, J.E., Himpsel, F.J.

Inverse photoemission from W(110) has been used to determine the dispersion of the unoccupied energy bands along the tungsten ΓΣN line. The critical points are determined to be Γ12 at 2.6 eV, N1...