Comparison of Monte Carlo Transport Models for (2008)
Nanometer-size Mosfets, C. Fiegna, M. Braccioli, S. C. Brugger, F. M. Bufler, P. Dollfus, ...
This paper presents the results of a comparison among five Monte Carlo device simulators for nano-scale MOSFETs. These models are applied to the simulation of the I-V characteristics of a 25 nm...
Scalability of FinFETs and Unstrained–Si/Strained–Si FDSOI–MOSFETs (2008)
F. M. Bufler, A. Schenk, W. Fichtner
Full–band Monte Carlo simulations are performed for n–type FinFETs as well as for unstrained–Si and strained–Si fully–depleted (FD) SOI–MOSFETs. Gate lengths of 50 nm down to 10 nm are...
F. M. Bufler, P. Graf, B. Meinerzhagen, B. Adeline, M. M. Rieger, H. Kibbel, ...
A comprehensive and thorough investigation of electron transport properties in unstrained and strained Si 1\Gammax Ge x alloys is presented. Ohmic majority and minority drift mobilities, effective...
Strained-Si single-gate versus unstrained-Si double-gate MOSFETs (2004)
F M Bufler, A Schenk, W Fichtner
Self-consistent full-band Monte Carlo simulations are employed to compare the performance of nanoscale strained-Si single-gate (SG) and unstrained-Si double-gate (DG) MOSFETs for a gate length of 25...
Monte Carlo Simulation and Measurement of Nanoscale n-MOSFETs (2003)
F. M. Bufler, Yoshinori Asahi, Hisao Yoshimura, Christoph Zechner, A. Schenk, Wolfgang Fichtner
The output characteristics of state-of-the-art n-MOSFETs with effective channel lengths of 40 and 60 nm have been measured and compared with full-band Monte Carlo simulations. The device structures...
com/archive/articles/0103ate.htm (2003)
S. Dey, E. J. Marinissen, Y. Zorian, Test Access Methodology, F. M. Bufler, Y. Asahi, ...
VIII. CONCLUSION In this paper, an efficient implementation of a TAM is proposed for the MSOC testing. The technique introduces I/O access of the analog cores through the MTAM switch, which is...
Self-Consistent Single-Particle Simulation (2002)
F. M. Bufler, C. Zechner, A. Schenk, W. Fichtner
Self{consistent single{particle Monte Carlo device simulations are presented. Self{ consistency is achieved by an iterative coupling{ scheme of single{particle frozen{ eld Monte Carlo simulations...
F. M. Bufler, A. Schenk, C. Zechner, N. Inada, Y. Asahi, W. Fichtner
A comparison between non-selfconsistent single-particle Monte Carlo (MC) simulations and measurements of the output characteristics of an 0.1 µm n-MOSFET is presented. First the bulk MC model, which...
Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs (2001)
F. M. Bufler, P. D. Yoder, W. Fichtner
The strain-dependence of electron transport in bulk Si and deep-submicron MOSFETs is investigated by full-band Monte Carlo simulation. On the bulk level, the drift velocity at medium field strengths...
Efficient Monte Carlo device modeling (2000)
F. M. Bufler, A. Schenk, Wolfgang Fichtner
Abstract---A single-particle approach to full-band Monte Carlo device simulation is presented which allows an efficient computation of drain, substrate and gate currents in deep submicron MOSFETs. In...
B. Neinhüs, S. Decker, P. Graf, F. M. Bufler, B. Meinerzhagen
Good agreement between a hydrodynamic and a Monte-Carlo device model is demonstrated in this paper for an advanced SiGe Heterojunction Bipolar Transistor. This result is based on two principles: 1)...
F. M. Bufler, P. Graf, B. Meinerzhagen
Monte Carlo results are presented for the velocity-field characteristics of holes in (i) unstrained Si, (ii) strained Si and (iii) strained SiGe using a full band model as well as an analytic...