F. Mollot

HIGH Q InP-BASED VARACTOR DIODES (2008)

T. David, S. Arscott, P. Mounaix, X. Mélique, F. Mollot, O. Vanbésien, ...

Abstract-We report on high quality-factor Heterostructure Barrier Varactor making benefit of epitaxial stacking and planar integration, with a cut-off frequency in the far infrared region. To this...

Two-photon absorption in InP substrates in the 1.55 µm range (2004)

Vignaud, D., Lampin, J.F., Mollot, F.

Generation and detection of terahertz pulses using post-process bonding of low-temperature-grown GaAs and AlGaAs (2004)

Desplanque, L., Lampin, J.F., Mollot, F.

Photo-détecteurs et commutateurs ultra rapides à 1.3 et 1.5 µm (2003)

Duban, E., Peytavit, E., Mangeney, S., Mouret, G., Lampin, J.F., Mollot, F., ...

Conduction band offset in the AlxGayIn1–x–yP/Ga0.52In0.48P system as studied by luminescence spectroscopy (2003)

Vignaud, D., Mollot, F.

Shock wave coupling between terahertz transmission lines on GaAs (2003)

Desplanque, L., Peytavit, E., Lampin, J.F., Lippens, D., Mollot, F.

Terahertz electromagnetic generation via optical frequency difference (2002)

E. Peytavit, ], F. Lampin, J., Arscott, S., Masselin, P., Mouret, G., Desplanque, L., ...

Terahertz Frequency difference from vertically-integrated low-temperature-grown GaAs photodetector (2002)

E. Peytavit, ], Arscott, S., Lippens, D., Mouret, G., Matton, S., Masselin, P., ...

Terahertz frequency difference from vertcally integrated low-temperature-grown GaAs photodetector (2002)

Peytavit, E., Arscott, S., Lippens, D., Mouret, G., Matton, S., Masselin, P., ...

Why do (2x4) GaAs and InAs (001) surfaces exposed to phosphorus have so different strain behavior ? (2002)

Wallart, X., Priester, C., Deresmes, D., Gehin, T., Mollot, F.

Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density (2002)

Vignaud, D., Lampin, J.F., Lefebvre, E., Zaknoune, M., Mollot, F.

Experimental study of hot-electron inelastic scattering rate in p-type InGaAs (2002)

Sicault, D., Teissier, R., Pardo, F., Pelouard, J.L., Mollot, F.

Hemt structures and technology on GAAS and inp for power amplification in millimetre wave range (2001)

Théron, D., Cordier, Y., Wallart, X., Bollaert, S., Zaknoune, M., Boudrissa, M., ...

The paper introduces a simple and efficient approach for the modelling of low-frequency dispersive phenomena in FETs. It is based on the definition of a virtual, non-dispersive associated device...

Growth of strained GaSub 1-xIn Sub x players on GaP (001) by gas source molecular beam epitaxy similarities and differences with the growth of strained arsenides (2001)

Wallart, X., Deresmes, D., Mollot, F.

Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by Gas Source Molecular Beam Epitaxy (2001)

Wallart, X., Deresmes, D., Mollot, F.

Detection of picosecond electrical pulses using the intrinsic Franz-Keldysh effect (2001)

Lampin, J.F., Desplanque, L., Mollot, F.

Thermally detected optical absorption, reflectance and photo-reflectance of In(As, P)/InP quantum wells grown by gas source molecular beam epitaxy (2001)

Disseix, P., Payen, C., Leymarie, J., Vasson, A., Mollot, F.

Optical non-linearities due to charge transfer in type II heterostructures (1993)

Planel, R., Teissier, R., Mollot, F.

We present experimental studies of photocreated carrier population in type II heterostructures. The main effects are related to charge separation and band filling : Blue shift and broadening of the...

Optical non-linearities due to charge transfer in type II heterostructures (1993)

Planel, R., Teissier, R., Mollot, F.

We present experimental studies of photocreated carrier population in type II heterostructures. The main effects are related to charge separation and band filling : Blue shift and broadening of the...

Optical non-linearities due to charge transfer in type II heterostructures (1993)

Planel, R., Teissier, R., Mollot, F.

We present experimental studies of photocreated carrier population in type II heterostructures. The main effects are related to charge separation and band filling : Blue shift and broadening of the...

DX centers in AlAs and GaAs-AlAs selectively doped superlattices (1991)

Ababou, S., Marchand, J., Mayet, L., Guillot, G., Mollot, F.

DX centers have been investigated using deep level transient spectroscopy (DLTS) in Si doped AlAs and in selectively doped GaAs-AlAs superlattices (SLs) grown by molecular beam epitaxy. The...

Persistent photoconductivity in uniforndy and selectively silicon doped AlAs / GaAs short period superlattices (1991)

Jeanjean, P., Sicart, J., Robert, J., Mollot, F., Planel, R.

Hall and photo-Hall measurements have been carried out between 4 K et 400 K on MBE deposited AlAs / GaAs superiattices (SPS) with short period (25 Å < P < 50 Å) SPSs were uniformly or selectively...

DX centers in AlAs and GaAs-AlAs selectively doped superlattices (1991)

Ababou, S., Marchand, J., Mayet, L., Guillot, G., Mollot, F.

DX centers have been investigated using deep level transient spectroscopy (DLTS) in Si doped AlAs and in selectively doped GaAs-AlAs superlattices (SLs) grown by molecular beam epitaxy. The...

Persistent photoconductivity in uniforndy and selectively silicon doped AlAs / GaAs short period superlattices (1991)

Jeanjean, P., Sicart, J., Robert, J., Mollot, F., Planel, R.

Hall and photo-Hall measurements have been carried out between 4 K et 400 K on MBE deposited AlAs / GaAs superiattices (SPS) with short period (25 Å < P < 50 Å) SPSs were uniformly or selectively...

DX centers in AlAs and GaAs-AlAs selectively doped superlattices (1991)

Ababou, S., Marchand, J., Mayet, L., Guillot, G., Mollot, F.

DX centers have been investigated using deep level transient spectroscopy (DLTS) in Si doped AlAs and in selectively doped GaAs-AlAs superlattices (SLs) grown by molecular beam epitaxy. The...

Persistent photoconductivity in uniforndy and selectively silicon doped AlAs / GaAs short period superlattices (1991)

Jeanjean, P., Sicart, J., Robert, J., Mollot, F., Planel, R.

Hall and photo-Hall measurements have been carried out between 4 K et 400 K on MBE deposited AlAs / GaAs superiattices (SPS) with short period (25 Å < P < 50 Å) SPSs were uniformly or selectively...

ELECTRIC FIELD ENHANCEMENT OF OPTICAL ABSORPTION IN GaAs-AlAs TYPE-II SUPERLATTICES (1987)

Danan, G., Ladan, F., Mollot, F., Planel, R.

The spatial separation of electrons and holes in GaAs/AlAs "indirect" type superlattices is evidenced by the enhancement of optical transition probability under a longitudinal electric field.

FOLDED AND UNFOLDED ACOUSTIC MODES IN LONG-PERIOD GaAs-AlAs SUPERLATTICES. A COMBINED RAMAN-BRILLOUIN STUDY (1987)

He, J., Sapriel, J., Chavignon, J., Azoulay, R., Dugrand, L., Mollot, F., ...

Direct acoustic modes (Brillouin lines) as well as folded acoustic modes at frequencies higher and lower than the Brillouin lines are simultaneously observed. Both LA and TA polarizations are...

RAMAN INTENSITY OF FOLDED ACOUSTIC VIBRATIONS IN SUPERLATTICES WITH COMPLEX UNIT CELL (1987)

Jusserand, B., Mollot, F., Joncour, M., Etienne, B.

We present and quantitatively analyse Raman scattering results on GaAs-AlAs periodic structures with supercells constructed according to successive generations of the Fibonacci sequence. The folded...

ELECTRIC FIELD ENHANCEMENT OF OPTICAL ABSORPTION IN GaAs-AlAs TYPE-II SUPERLATTICES (1987)

Danan, G., Ladan, F., Mollot, F., Planel, R.

The spatial separation of electrons and holes in GaAs/AlAs "indirect" type superlattices is evidenced by the enhancement of optical transition probability under a longitudinal electric field.

FOLDED AND UNFOLDED ACOUSTIC MODES IN LONG-PERIOD GaAs-AlAs SUPERLATTICES. A COMBINED RAMAN-BRILLOUIN STUDY (1987)

He, J., Sapriel, J., Chavignon, J., Azoulay, R., Dugrand, L., Mollot, F., ...

Direct acoustic modes (Brillouin lines) as well as folded acoustic modes at frequencies higher and lower than the Brillouin lines are simultaneously observed. Both LA and TA polarizations are...

RAMAN INTENSITY OF FOLDED ACOUSTIC VIBRATIONS IN SUPERLATTICES WITH COMPLEX UNIT CELL (1987)

Jusserand, B., Mollot, F., Joncour, M., Etienne, B.

We present and quantitatively analyse Raman scattering results on GaAs-AlAs periodic structures with supercells constructed according to successive generations of the Fibonacci sequence. The folded...

ELECTRIC FIELD ENHANCEMENT OF OPTICAL ABSORPTION IN GaAs-AlAs TYPE-II SUPERLATTICES (1987)

Danan, G., Ladan, F., Mollot, F., Planel, R.

The spatial separation of electrons and holes in GaAs/AlAs "indirect" type superlattices is evidenced by the enhancement of optical transition probability under a longitudinal electric field.

FOLDED AND UNFOLDED ACOUSTIC MODES IN LONG-PERIOD GaAs-AlAs SUPERLATTICES. A COMBINED RAMAN-BRILLOUIN STUDY (1987)

He, J., Sapriel, J., Chavignon, J., Azoulay, R., Dugrand, L., Mollot, F., ...

Direct acoustic modes (Brillouin lines) as well as folded acoustic modes at frequencies higher and lower than the Brillouin lines are simultaneously observed. Both LA and TA polarizations are...

RAMAN INTENSITY OF FOLDED ACOUSTIC VIBRATIONS IN SUPERLATTICES WITH COMPLEX UNIT CELL (1987)

Jusserand, B., Mollot, F., Joncour, M., Etienne, B.

We present and quantitatively analyse Raman scattering results on GaAs-AlAs periodic structures with supercells constructed according to successive generations of the Fibonacci sequence. The folded...