Structural and spectroscopic properties of AlN layers grown by MOVPE (2008)
Thapa, S. B., Kirchner, C., Scholz, F., Prinz, G. M., Thonke, K., Sauer, R., ...
The effects on surface morphology, crystal quality, and growth rate of undoped AlN layers grown on c-plane sapphire substrates due to the changes in growth parameters, such as V–III ratio, N2–H2...
Structural and spectroscopic properties of AlN layers grown by MOVPE (2008)
Thapa, S. B., Kirchner, C., Scholz, F., Prinz, G. M., Thonke, K., Sauer, R., ...
The effects on surface morphology, crystal quality, and growth rate of undoped AlN layers grown on c-plane sapphire substrates due to the changes in growth parameters, such as V–III ratio, N2–H2...
Absorption and light scattering in InGaN-on-sapphire- and AlGaInP-based light-emitting diodes (2008)
Schad, Sven-Silvius, Neubert, B., Eichler, Christoph, Scherer, M., Habel, F., Seyboth, M., ...
Different experimental and simulation techniques aiming at a better understanding of lateral mode absorption in light-emitting diodes (LEDs) are presented in this paper. A measurement of transmitted...
Absorption and light scattering in InGaN-on-sapphire- and AlGaInP-based light-emitting diodes (2008)
Schad, Sven-Silvius, Neubert, B., Eichler, Christoph, Scherer, M., Habel, F., Seyboth, M., ...
Different experimental and simulation techniques aiming at a better understanding of lateral mode absorption in light-emitting diodes (LEDs) are presented in this paper. A measurement of transmitted...
Eichler, Christoph, Schad, Sven-Silvius, Scholz, F., Hofstetter, Daniel, Miller, Stephan, Weimar, Andreas, ...
We present measurements on an aperiodic device-specific longitudinal-mode pattern in InGaN laser diodes. The characteristic shape of this pattern occurs only if the laser is driven slightly above...
Eichler, Christoph, Schad, Sven-Silvius, Scholz, F., Hofstetter, Daniel, Miller, Stephan, Weimar, Andreas, ...
We present measurements on an aperiodic device-specific longitudinal-mode pattern in InGaN laser diodes. The characteristic shape of this pattern occurs only if the laser is driven slightly above...
Tekin, T., Schröder, H., Wunderle, B., Erbert, G., Klehr, A., Brox, O., ...
The authors have developed a new compact integration concept for a green laser emitter. Compact green light sources are of great interest for several applications such as in spectroscopy and mobile...
Zimmermann, S., Vina, L., Schweizer, H., Scholz, F., Haacke, S., Deveaud, B.
The coexistence of localized and free holes in modulation doped InGaAs/InP quantum wells, which show Fermi edge singularities in the cw photoluminescence and excitation spectra, has been determined...
Anisotropic strain and phonon deformation potentials in GaN (2007)
Darakchieva, V., Paskova, T., Schubert, Mathias, Arwin, H., Paskov, P.P., Monemar, B., ...
We report optical phonon frequency studies in anisotropically strained c-plane- and a-plane-oriented GaN films by generalized infrared spectroscopic ellipsometry and Raman scattering spectroscopy....
Bandgap measurements of direct and indirect semiconductors using monochromated electrons (2007)
Gu, L., Srot, V., Sigle, W., Koch, C., Van Aken, P., Scholz, F., ...
Band-gap measurements of direct and indirect semiconductors using monochromated electrons (2007)
Gu, L., Srot, V., Sigle, W., Koch, C., Van Aken, P. A., Scholz, F., ...
Band-gap measurements of direct and indirect semiconductors using monochromated electrons (2007)
Gu, L., Srot, V., Sigle, W., Koch, C., Van Aken, P. A., Scholz, F., ...
Becerra, LO, Berry, J, Chang, CS, Chapman, GD, Chung, JW, Davis, RS, ...
The ubiquitous technology of magnetic force compensation of gravitational forces acting on artifacts on the pans of modern balances and comparators has brought with it the problem of magnetic leakage...
Becerra, LO, Berry, J, Chang, CS, Chapman, GD, Chung, JW, Davis, RS, ...
The ubiquitous technology of magnetic force compensation of gravitational forces acting on artifacts on the pans of modern balances and comparators has brought with it the problem of magnetic leakage...
EELS studies of the bandgap in GaN using monochromated electrons (2006)
Gu, L., Srot, V., Sigle, W., Koch, C. T., Scholz, F., Kirchner, C., ...
Hussy, S., Meissner, E., Birkmann, B., Brauer, I., Off, J., Scholz, F., ...
In this paper alpha-plane GaN-layers, grown by two different techniques are compared, mainly focusing on the surface morphology and microstructure of the samples: Layers grown by metal organic vapor...
EELS studies of the bandgap in GaN using monochromated electrons (2006)
Gu, L., Srot, V., Sigle, W., Koch, C. T., Scholz, F., Kirchner, C., ...
Improved GaN layer morphology by hydride vapor phase epitaxy on misoriented Al(2)O(3) wafers (2005)
Scholz, F., Brueckner, P., Habel, F., Peter, M., Köhler, K.
Crack-free thick GaN layers have been grown by hydride vapor phase epitaxy on on-axis as well as on off-axis GaN-Al2O3 templates. A dramatic difference in surface quality could be traced back to the...
Near-field and far-field dynamics of (Al,In)GaN laser diodes (2005)
Schwarz, Uli, Pindl, M., Wegscheider, Werner, Eichler, C., Scholz, F., Furitsch, M., ...
Cracking of III-nitride multiple heterostructures grown by MOVPE on (0001)-6H-SiC and Al2O3 (2003)
Hasenkopf,A., Phillipp,F., Moutchnik,G., Ivanov,A., Scholz,F.
Cracking of III-nitride multiple heterostructures grown by MOVPE on (0001)-6H-SiC and Al2O3 (2003)
Hasenkopf, A., Phillipp, F., Moutchnik, G., Ivanov, A., Scholz, F.
Characterization of a laser produced plasma source for a laboratory EUV reflectometer (2003)
Scholze, F., Scholz, F., Tümmler, J., Ulm, G., Legall, H., ...
With the development of EUV lithography there is an increasing need for high-accuracy at-wavelength metrology. In particular, there is an urgent need for metrology at optical components like mirrors...
Dynamic large-signal I-V analysis and non-linear modelling of ALGAN/GAN HEMTS (2001)
Chigaeva, E., Wieser, N., Walthes, W., Grözing, M., Berroth, M., Roll, H., ...
For AlGaN/GaN high electron mobility transistors (HEMTs), the voltage and current waveforms at CW large-signal operation at 5 GHz have been reconstructed from experimental magnitude and phase...
Dynamic large-signal I-V analysis and non-linear modelling of ALGAN/GAN HEMTS (2001)
Chigaeva, E., Wieser, N., Walthes, W., Grözing, M., Berroth, M., Roll, H., ...
For AlGaN/GaN high electron mobility transistors (HEMTs), the voltage and current waveforms at CW large-signal operation at 5 GHz have been reconstructed from experimental magnitude and phase...
Growth of self-assembled InP quantum dots for red-light emitting injection laser diodes (2000)
Porsche,J., Ost,M., Scholz,F., Fantini,A., Phillipp,F., Riedl,T., ...
Growth of self-assembled InP quantum dots for red-light emitting injection laser diodes (2000)
Porsche, J., Ost, M., Scholz, F., Fantini, A., Phillipp, F., Riedl, T., ...
The impact of LOC structures on 670-nm (Al)GaInP high-power lasers (2000)
Lichtenstein, N., Winterhoff, R., Scholz, F., Schweizer, H., Weiss, S., Hutter, M., ...
We investigate the potential of large optical cavity (LOC)-laser structures for AlGaInP high-power lasers. For that we study large series of broad area lasers with varying waveguide widths to obtain...
Antioxidative Systems in Spruce Clones Grown at High Altitudes (1999)
Polle, A., Rennenberg, H., Scholz, F.
Antioxidative systems were studied in current-year needles of 15 different clones of four-year-old spruce trees (Picea abies (L.) Karst.) grown at three altitudes (800 m, 1150 m and 1750 m above sea...
Heppel, S., Wirth, R., Off, J., Scholz, F., Hangleiter, A., Obloh, H., ...
In this paper, we present our investigations of the waveguiding properties of various GaInN/GaN-DH and laser structures; particularly with regard to the influence of the substrate. Due to the small...
Role of electron traps in the excitation and de-excitation mechanism of Yb3+ in InP (1995)
Tsimperides, I., Gregorkiewicz, T., Ammerlaan, C.A.J., Godlewski, M., Scholz, F., Lambert, B.
Selective MOVPE-growth of GaAs on Si for photovoltaic devices (1994)
Zieger, K., Strauss, P., Scholz, F., Frankowsky, G., Hangleiter, A., Blieske, U., ...
Exciton saturation and field screening in InGaAs/InGaAsP multiple quantum wells (1993)
TÜtken, T., Hawdon, B., Scheuble, E., Zimmermann, M., KÖnig, P., Hangleiter, A., ...
We performed differential transmission spectroscopy and time resolved pump probe measurements on biased InGaAs/InGaAsP multiple quantum well structures. At low carrier excitation levels we observe a...
Indirect excitons in strained GaxIn1-xAs/InP quantum wells (1993)
Michler, P., Hangleiter, A., Moritz, A., Fuchs, G., HÄrle, V., Scholz, F.
We present direct experimental evidence that in GaxIn1-xAs/InP quantum wells the bandstructure undergoes a direct-to-indirect gap transition in k-space above a critical value of x. We observe a...
Exciton saturation and field screening in InGaAs/InGaAsP multiple quantum wells (1993)
TÜtken, T., Hawdon, B., Scheuble, E., Zimmermann, M., KÖnig, P., Hangleiter, A., ...
We performed differential transmission spectroscopy and time resolved pump probe measurements on biased InGaAs/InGaAsP multiple quantum well structures. At low carrier excitation levels we observe a...
Indirect excitons in strained GaxIn1-xAs/InP quantum wells (1993)
Michler, P., Hangleiter, A., Moritz, A., Fuchs, G., HÄrle, V., Scholz, F.
We present direct experimental evidence that in GaxIn1-xAs/InP quantum wells the bandstructure undergoes a direct-to-indirect gap transition in k-space above a critical value of x. We observe a...
Exciton saturation and field screening in InGaAs/InGaAsP multiple quantum wells (1993)
TÜtken, T., Hawdon, B., Scheuble, E., Zimmermann, M., KÖnig, P., Hangleiter, A., ...
We performed differential transmission spectroscopy and time resolved pump probe measurements on biased InGaAs/InGaAsP multiple quantum well structures. At low carrier excitation levels we observe a...
Indirect excitons in strained GaxIn1-xAs/InP quantum wells (1993)
Michler, P., Hangleiter, A., Moritz, A., Fuchs, G., HÄrle, V., Scholz, F.
We present direct experimental evidence that in GaxIn1-xAs/InP quantum wells the bandstructure undergoes a direct-to-indirect gap transition in k-space above a critical value of x. We observe a...
D'Hoedt, B., Frey, D., Lukas, D., Quante, F., Scholz, F., Schulte, W., ...
Medical applications of a dynamic measuring method for determining the severeness of periodontal disease of teeth are described. The applied method uses the signals of a subminiature accelerometer...
126 p. ;
Magnetic anisotropy of lecithin membranes. A new anisotropy susceptometer.
Scholz, F, Boroske, E, Helfrich, W
Cylindrical giant vesicles prepared from egg lecithin and 1,2-dimyristoyl-sn-glycero-3-phosphocholine (DMPC) are oriented in an external magnetic field and observed by phase contrast microscopy. The...
Magnetic anisotropy of lecithin membranes. A new anisotropy susceptometer.
Scholz, F, Boroske, E, Helfrich, W
Cylindrical giant vesicles prepared from egg lecithin and 1,2-dimyristoyl-sn-glycero-3-phosphocholine (DMPC) are oriented in an external magnetic field and observed by phase contrast microscopy. The...