F. Teppe

Publication List Details

Period

2004 - 2009

Number

10

Co-Authors

Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications (2009)

Knap, W., Dyakonov, M., Coquillat, D., Teppe, F., Dyakonova, N., Łusakowski, J., ...

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the...

Terahertz Radiation Detection by Field Effect Transistor in Magnetic Field (2009)

Boubanga-Tombet, S., Sakowicz, M., Coquillat, D., Teppe, F., Knap, W., Dyakonov, M. I., ...

We report on terahertz radiation detection with InGaAs/InAlAs Field Effect Transistors in quantizing magnetic field. The photovoltaic detection signal is investigated at 4.2 K as a function of the...

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor (2006)

Torres, Jérémi, Nouvel, P., Akwoue-Ondo, A., Chusseau, L., Teppe, F., Shchepetov, A., ...

We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma...

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor (2006)

Torres, Jérémi, Nouvel, P., Akwoue-Ondo, A., Chusseau, L., Teppe, F., Shchepetov, A., ...

We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma...

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor (2006)

Torres, Jérémi, Nouvel, P., Akwoue-Ondo, A., Chusseau, L., Teppe, F., Shchepetov, A., ...

We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma...

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor (2006)

Torres, Jérémi, Nouvel, P., Akwoue-Ondo, A., Chusseau, L., Teppe, F., Shchepetov, A., ...

We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma...

Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power (2006)

Tauk, R., Teppe, F., Boubanga, S., Coquillat, D., Knap, W., Meziani, Y. M., ...

Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120-300 nm have been studied as room temperature plasma wave detectors of 0.7 THz electromagnetic radiation....

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor (2006)

Torres, Jérémi, Nouvel, P., Akwoue-Ondo, A., Chusseau, L., Teppe, F., Shchepetov, A., ...

We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma...