G. D. Wilk

Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3/GaN metal-oxide-semiconductor structures (2007)

Wu, Y Q, Shen, T, Ye, P. D., Wilk, G D

The authors report on an Al2O3 gate oxide deposited on n-type GaN by atomic layer deposition technique. The high-frequency C-V characteristic shows deep-depletion behavior at room temperature due to...

Current transport and maximum dielectric strength of atomic-layer-deposited ultrathin Al2O3 on GaAs (2007)

Wu, Y Q, Lin, H C, Ye, P. D., Wilk, G D

Current-voltage characteristics have been measured for an ultrathin atomic-layer-deposited Al2O3 on GaAs as a function of film thickness, ambient temperature, and electric field. Current transport...

Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited A12O3 gate dielectric (2006)

Xuan, Y., Ye, P. D., Lin, H. C., Wilk, G. D.

Atomic layer deposition

Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited AI2O3 gate dielectric (2006)

Xuan, Y., Lin, H. C., Ye, P. D., Wilk, G. D.

Atomic layer deposition

Current-transport properties of atomic-layer-deposited ultrathin Al2O3 (2006)

Lin, H. C., Ye, P. D., Wilk, G. D.

We report detailed current-transport studies of ultrathin Al2O3 dielectrics on GaAs grown by atomic layer deposition (ALD) as a function of film thickness, ambient temperature and electric field. The...

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N) (2002)

Ho, M.Y, Busch, B, Wilk, G.D, Sorsch, T, Conard, Thierry, ...