Lattice location of implanted Cu in Si (2003)
Wahl, U, Correia, J G, Vantomme, A, Langouche, G
We have implanted the radioactive probe atom 67Cu (t1/2=61.9 h) into single-crystalline Si. Monitoring the beta- emission yield from the decay of 67Cu to 67Zn as a function of angle from different...
Er-O clustering and its influence on the lattice sites of Er in Si (2003)
Wahl, U, Correia, J G, Araújo, J P, Vantomme, A, Langouche, G
We present emission channeling experiments on the lattice location of Er in CZ Si single crystals with a well-defined O concentration of 6.5-6.6x10E17 cm-3 and 60 keV-implanted Tm+Er doses ranging...
Electron emission channeling with position-sensitive detectors (2003)
Wahl, U, Correia, J G, Cardoso, S, Marques, J G, Vantomme, A, Langouche, G
Electron emission channeling allows direct lattice location studies of low doses of radioactive atoms implanted in single crystals. For that purpose the anisotropic emission yield of conversion...
Lattice sites and damage annealing of Er in low-dose implanted GaAs (2003)
Wahl, U, Vantomme, A, Langouche, G
We have used conversion electron emission channeling to determine the lattice location of 167mEr (t1/2=2.28 s) in GaAs after 60 keV room temperature implantation of 167Tm (t1/2=9.25 d) at low doses...
Lattice sites and stability of implanted Er in FZ and CZ Si (2003)
Wahl, U, Correia, J G, Langouche, G, Vantomme, A
We report on the lattice location of 167Er in Si measured by conversion electron emission channeling. In both FZ and CZ Si, a high fraction of Er (>65%) occupies near-tetrahedral interstitial (T)...
Lattice sites and damage annealing of implanted Tm and Er in Si (2003)
Wahl, U, Correia, J G, De Wachter, J H, Langouche, G, Marques, J G, Moons, R, ...
We have studied the lattice sites of Er in CZ Si single crystals by using conversion electron emission channeling from the isotope 167mEr (2.28 s) which is the decay product of radioactive 167Tm...
Direct Evidence for Tetrahedral Interstitial Er in Si (2003)
Wahl, U, Vantomme, A, De Wachter, J H, Langouche, G, Marques, J G, ...
We report on the lattice location of Er in Si using the emission channeling technique. The angular distribution of conversion electrons emitted by the decay chain 167Tm (t1/2=9.25 d) -> 167mEr (2.28...
Lattice location and stability of ion implanted Cu in Si (2003)
Wahl, U, Vantomme, A, Langouche, G, Correia, J G
We report on the lattice location of ion implanted Cu in Si using the emission channeling technique. The angular distribution of beta- particles emitted by the radioactive isotope 67Cu was monitored...
Emission channeling studies of Pr in GaN (2003)
Wahl, U, Vantomme, A, Langouche, G, Araújo, J P, Peralta, L, Correia, J G
We report on the lattice location of Pr in thin film, single-crystalline hexagonal GaN using the emission channeling technique. The angular distribution of b- particles emitted by the radioactive...
Lattice location of implanted Cu in highly doped Si (2003)
Wahl, U, Vantomme, A, Langouche, G, Araújo, J P, Peralta, L, Correia, J G
We report on the lattice location of ion-implanted 67Cu in p+ and n+ Si using the emission channeling technique. Following room-temperature implantation, the majority of Cu was found on...
Direct evidence for implanted Fe on substitutional Ga sites in GaN (2003)
Wahl, U, Vantomme, A, Langouche, G, Correia, J G, Peralta, L
The lattice location of iron in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation of the precursor...
Emission channeling studies of implanted $^{167m}Er$ in InP (2003)
Wahl, U, Vantomme, A, Langouche, G, Araújo, J P
We have used conversion electron emission channeling to determine the lattice location of 167mEr (t1/2=2.28 s) in InP after 60 keV room temperature implantation of 167Tm (t1/2=9.25 d) at a dose of...
Falepin, A, Cottenier, Stefaan, Comrie, C.M., Richard, O, Bender, H, Langouche, G, ...
The phase formation and crystallization processes of metastable [CsCl]Fe1-xSi phases were investigated by irradiating epsilon-FeSi/Si(111) thin films with a pulsed excimer laser in the energy density...
Stability studies of Hg implanted $YBa_{2}Cu_{3}O_{6+x}$ (2001)
Araújo, J P, Correia, J G, Wahl, U, Marques, J G, Alves, E, Amaral, V S, ...
High quality YBa2Cu3O6+x (YBCO) superconducting thin films were implanted with the radioactive 197m Hg (T1/2 = 24 h) isotope to low fluences of 10^13 atoms/cm^2 and 60 keV energy. The lattice...
Stability and diffusion of Hg implanted $YBa_{2}Cu_{3}O_{6+x}$ (2001)
Araújo, J P, Correia, J G, Wahl, U, Marques, J G, Alves, E, Amaral, V S, ...
The radioactive isotope 197m Hg was implanted at 60 keV with low fuences (10^13 ions/cm^2 ) into YBa2Cu3O6+x (YBCO) superconducting thin films at ISOLDE/CERN. We report on the Hg dynamics and...
Rutherford backscattering/channeling study of a thin AlGaN layer on Al(2)O(0)3(0001). (2001)
WU, MF, VANTOMME, A, HOGG, S, LANGOUCHE, G, JACOBS, K, ...
Elastic strain in InGaN and AlGaN layers. (2000)
WU, MF, YAO, SD, VANTOMME, A, HOGG, S, LANGOUCHE, G, Van Der Stricht, Wim, ...
VANTOMME, A, WU, MF, HOGG, S, LANGOUCHE, G, JACOBS, K, Moerman, Ingrid, ...
Low temperature anneal of electron irradiation induced defects in p type silicon. (1998)
TRAUWAERT, MA, VANHELLEMONT, J, MAES, HE, VAN BAVEL, AM, LANGOUCHE, G, Clauws, Paul
Direct evidence for stability of tetrahedral interstitial Er in Si up to 900 degree C (1997)
Wahl, U, Correia, J G, Langouche, G, Marques, J G, Vantomme, A
Conversion electron emission channeling from the isotope 167mEr (2.28 s), which is the decay product of radioactive 167Tm (9.25 d), offers a means of monitoring the lattice sites of Er in single...
10th International Conference on Hyperfine Interactions (1996)
Coussement, R, Dekoster, J, Langouche, G, Rots, M, Vantomme, A
On the behaviour of the divacancy in silicon during anneals between 200 and 350 degrees C. (1995)
TRAUWAERT, MA, VANHELLEMONT, J, MAES, HE, VANBAVEL, AM, LANGOUCHE, G, STESMANS, A, ...
Identification of the Ohmic-contact formation mechanism in the Au/Te/Au/GaAs system (1992)
Wuyts, K., Langouche, G., Watté, J., Vanderstraeten, H., Silverans, R. E., Münder, H., ...
Copyright AIP. This version is available at http://dx.doi.org/10.1103/PhysRevB.45.11863
Local nuclear orientation using defect-induced electric field gradients in cubic lattices (1987)
Langouche, G., Heyden, M. Van Der, Tong, M., Berkes, I., Fahad, M., El Hajjaji, O., ...
Local nuclear orientation using defect-induced electric field gradients in cubic lattices (1987)
Langouche, G., Heyden, M. Van Der, Tong, M., Berkes, I., Fahad, M., El Hajjaji, O., ...
Lattice displacement waves in aute$_2$ (1986)
Langouche, G., Hlimi, B., El Hajjaji, O., Marest, G., Berkes, I., Heyden, M. Van Der, ...
Lattice displacement waves in aute$_2$ (1986)
Langouche, G., Hlimi, B., El Hajjaji, O., Marest, G., Berkes, I., Heyden, M. Van Der, ...
LASER ANNEALING OF Te IMPLANTED IN SILICON (1980)
De Bruyn, J., Langouche, G., Van Rossum, M., De Potter, M., Coussement, R.
Mössbauer spectra of 129mTe implanted into Si have been studied earlier /l/. The spectra were composed of two lines which were interpreted as coming from Te in two different lattice sites. The...
LASER ANNEALING OF57Co SOURCES IMPLANTED IN Si AND Ge (1980)
Langouche, G., De Potter, M., De Bruyn, J., Van Rossum, M., Coussement, R., Dézsi, I.
No abstract available
ON THE LOCALIZATION OF Co ATOMS IN SILICON (1980)
Dézsi, I., Coussement, R., Langouche, G., Molnar, B., Nagy, D., De Potter, M.
No abstract available
Langouche, G., Dixon, N., Gettner, L., Hanna, S.
The recoil implantation experiments of Latshaw (1) had an important influence on the later Mössbauer work on implanted atoms in semiconductors (2,3). It was believed that the observed doublet, with...
STUDY OF THE AMORPHISATION PROCESS IN DIAMOND BY MEANS OF THE MÖSSBAUER EFFECT (1980)
Van Rossum, M., Langouche, G., De Bruyn, J., De Potter, M., Coussement, R.
No abstract available
The study of defects in type-IV semiconductors by Mössbauer spectroscopy (1980)
Van Rossum, M., Langouche, G., De Bruyn, J., De Potter, M., Coussement, R.
The paper discusses the use of Mössbauer Spectroscopy for the study of defects in semiconductors. Some recent experiments are presented which involve the implantation of deep centers in Si, Ge and...
LASER ANNEALING OF Te IMPLANTED IN SILICON (1980)
De Bruyn, J., Langouche, G., Van Rossum, M., De Potter, M., Coussement, R.
Mössbauer spectra of 129mTe implanted into Si have been studied earlier /l/. The spectra were composed of two lines which were interpreted as coming from Te in two different lattice sites. The...
LASER ANNEALING OF57Co SOURCES IMPLANTED IN Si AND Ge (1980)
Langouche, G., De Potter, M., De Bruyn, J., Van Rossum, M., Coussement, R., Dézsi, I.
No abstract available
ON THE LOCALIZATION OF Co ATOMS IN SILICON (1980)
Dézsi, I., Coussement, R., Langouche, G., Molnar, B., Nagy, D., De Potter, M.
No abstract available
Langouche, G., Dixon, N., Gettner, L., Hanna, S.
The recoil implantation experiments of Latshaw (1) had an important influence on the later Mössbauer work on implanted atoms in semiconductors (2,3). It was believed that the observed doublet, with...
STUDY OF THE AMORPHISATION PROCESS IN DIAMOND BY MEANS OF THE MÖSSBAUER EFFECT (1980)
Van Rossum, M., Langouche, G., De Bruyn, J., De Potter, M., Coussement, R.
No abstract available
The study of defects in type-IV semiconductors by Mössbauer spectroscopy (1980)
Van Rossum, M., Langouche, G., De Bruyn, J., De Potter, M., Coussement, R.
The paper discusses the use of Mössbauer Spectroscopy for the study of defects in semiconductors. Some recent experiments are presented which involve the implantation of deep centers in Si, Ge and...
LASER ANNEALING OF Te IMPLANTED IN SILICON (1980)
De Bruyn, J., Langouche, G., Van Rossum, M., De Potter, M., Coussement, R.
Mössbauer spectra of 129mTe implanted into Si have been studied earlier /l/. The spectra were composed of two lines which were interpreted as coming from Te in two different lattice sites. The...
LASER ANNEALING OF57Co SOURCES IMPLANTED IN Si AND Ge (1980)
Langouche, G., De Potter, M., De Bruyn, J., Van Rossum, M., Coussement, R., Dézsi, I.
No abstract available
ON THE LOCALIZATION OF Co ATOMS IN SILICON (1980)
Dézsi, I., Coussement, R., Langouche, G., Molnar, B., Nagy, D., De Potter, M.
No abstract available
Langouche, G., Dixon, N., Gettner, L., Hanna, S.
The recoil implantation experiments of Latshaw (1) had an important influence on the later Mössbauer work on implanted atoms in semiconductors (2,3). It was believed that the observed doublet, with...
STUDY OF THE AMORPHISATION PROCESS IN DIAMOND BY MEANS OF THE MÖSSBAUER EFFECT (1980)
Van Rossum, M., Langouche, G., De Bruyn, J., De Potter, M., Coussement, R.
No abstract available
The study of defects in type-IV semiconductors by Mössbauer spectroscopy (1980)
Van Rossum, M., Langouche, G., De Bruyn, J., De Potter, M., Coussement, R.
The paper discusses the use of Mössbauer Spectroscopy for the study of defects in semiconductors. Some recent experiments are presented which involve the implantation of deep centers in Si, Ge and...
MÖSSBAUER STUDY OF 57Co IMPLANTED IN SILICON AND GERMANIUM (1979)
Langouche, G., Dezsi, I., De Bruyn, J., Van Rossum, M., Coussement, R.
Experiments in large external fields show that the doublet observed in the Mössbauer spectra of 57Fe in Si and Ge, obtained by ion implantation to a dose of 1014 or higher is due to quadrupole...
THE ISOMER SHIFT VALUES OF IMPLANTED /133Xe/133Cs IN VARIOUS HOSTS (1979)
Dézsi, I., Coussement, R., Langouche, G., Pattyn, H., Reintsema, S., Van Rossum, M., ...
The isomer shift values of 133Cs implanted in graphite, diamond, Te, Si, Ge, Cu, Zn, Mo, and W are found in a larger interval than those found in Cs and Cs-compounds. The extension to larger values...
MÖSSBAUER STUDY OF 57Co IMPLANTED IN SILICON AND GERMANIUM (1979)
Langouche, G., Dezsi, I., De Bruyn, J., Van Rossum, M., Coussement, R.
Experiments in large external fields show that the doublet observed in the Mössbauer spectra of 57Fe in Si and Ge, obtained by ion implantation to a dose of 1014 or higher is due to quadrupole...
THE ISOMER SHIFT VALUES OF IMPLANTED /133Xe/133Cs IN VARIOUS HOSTS (1979)
Dézsi, I., Coussement, R., Langouche, G., Pattyn, H., Reintsema, S., Van Rossum, M., ...
The isomer shift values of 133Cs implanted in graphite, diamond, Te, Si, Ge, Cu, Zn, Mo, and W are found in a larger interval than those found in Cs and Cs-compounds. The extension to larger values...
MÖSSBAUER STUDY OF 57Co IMPLANTED IN SILICON AND GERMANIUM (1979)
Langouche, G., Dezsi, I., De Bruyn, J., Van Rossum, M., Coussement, R.
Experiments in large external fields show that the doublet observed in the Mössbauer spectra of 57Fe in Si and Ge, obtained by ion implantation to a dose of 1014 or higher is due to quadrupole...
THE ISOMER SHIFT VALUES OF IMPLANTED /133Xe/133Cs IN VARIOUS HOSTS (1979)
Dézsi, I., Coussement, R., Langouche, G., Pattyn, H., Reintsema, S., Van Rossum, M., ...
The isomer shift values of 133Cs implanted in graphite, diamond, Te, Si, Ge, Cu, Zn, Mo, and W are found in a larger interval than those found in Cs and Cs-compounds. The extension to larger values...
LATTICE LOCATION OF 5s-p IMPURITIES IMPLANTED IN TYPE-IV SEMICONDUCTORS (1976)
Van Rossum, M., De Bruyn, J., Langouche, G., Coussement, R., Boolchand, P.
The Mössbauer Effect of 125Te, 129Xe and 133Cs has been used to study the lattice location of Sb, Te, I and Xe ions implanted in Ge, Si and diamond lattices with an isotope separator. The results of...
NUCLEAR ORIENTATION EFFECTS IN THE MÖSSBAUER SPECTRUM OF 125Te IN Pd2MnSb (1976)
Langouche, G., Triplett, B., Dixon, N., Hanna, S., Boolchand, P.
A source of 125Sb in Pd2MnSb was cooled down to 139 mK and the 125Te Mössbauer spectrum was recorded. From the asymmetry observed in this spectrum, a positive sign was established for the magnetic...
LATTICE LOCATION OF 5s-p IMPURITIES IMPLANTED IN TYPE-IV SEMICONDUCTORS (1976)
Van Rossum, M., De Bruyn, J., Langouche, G., Coussement, R., Boolchand, P.
The Mössbauer Effect of 125Te, 129Xe and 133Cs has been used to study the lattice location of Sb, Te, I and Xe ions implanted in Ge, Si and diamond lattices with an isotope separator. The results of...
NUCLEAR ORIENTATION EFFECTS IN THE MÖSSBAUER SPECTRUM OF 125Te IN Pd2MnSb (1976)
Langouche, G., Triplett, B., Dixon, N., Hanna, S., Boolchand, P.
A source of 125Sb in Pd2MnSb was cooled down to 139 mK and the 125Te Mössbauer spectrum was recorded. From the asymmetry observed in this spectrum, a positive sign was established for the magnetic...
LATTICE LOCATION OF 5s-p IMPURITIES IMPLANTED IN TYPE-IV SEMICONDUCTORS (1976)
Van Rossum, M., De Bruyn, J., Langouche, G., Coussement, R., Boolchand, P.
The Mössbauer Effect of 125Te, 129Xe and 133Cs has been used to study the lattice location of Sb, Te, I and Xe ions implanted in Ge, Si and diamond lattices with an isotope separator. The results of...
NUCLEAR ORIENTATION EFFECTS IN THE MÖSSBAUER SPECTRUM OF 125Te IN Pd2MnSb (1976)
Langouche, G., Triplett, B., Dixon, N., Hanna, S., Boolchand, P.
A source of 125Sb in Pd2MnSb was cooled down to 139 mK and the 125Te Mössbauer spectrum was recorded. From the asymmetry observed in this spectrum, a positive sign was established for the magnetic...
A MÖSSBAUER STUDY ON POTTERY OF TURENG TEPE II (1974)
Schmidt, K., Van Rossum, M., Meykens, T., Langouche, G., Coussement, R., Bouchez, R.
Sherds of pottery of Tureng Tepe, Iran, belonging [1] to the archaeological layer II (2 500 BC) have been analyzed by Mössbauer spectrometry. Grey and red sherds found in layer II are suspected to...
IMPLANTATION OF 129mTe IN Fe AND Ni FOILS AND DETERMINATION OF THE HYPERFINE FIELDS (1974)
Coussement, R., Dumont, G., Langouche, G., Pattyn, H., Rots, M., Schmidt, K., ...
By means of the Mössbauer effect we have studied the positions of ions of 129mTe implanted by an isotope separator at 75 kV acceleration voltage. For implantations in iron, only one implantation...
STUDY OF THE MAGNETIC INTERACTION AT 129mXE IMPLANTED IN IRON (1974)
Van Rossum, M., Langouche, G., Pattyn, H., Dumont, G., Odeurs, J., Meykens, A., ...
The magnetic interaction at 129Xe was studied by implanting 129mXe activity in iron foils at a dose of 5 × 1012, 5 × 1013 and 1 × 1015 Xe at/cm2. The resulting Mössbauer spectra show a...
Langouche, G., Coussement, R., Van Rossum, M., Schmidt, K.
Mössbauer spectra of 125Te in a Te-lattice have shown a large electric field gradient. At the temperature of liquid helium the values Vzz = — 9.2 ± 1 × 1018 V/cm2 and η = 0.64 ± 0.04...
A MÖSSBAUER STUDY ON POTTERY OF TURENG TEPE II (1974)
Schmidt, K., Van Rossum, M., Meykens, T., Langouche, G., Coussement, R., Bouchez, R.
Sherds of pottery of Tureng Tepe, Iran, belonging [1] to the archaeological layer II (2 500 BC) have been analyzed by Mössbauer spectrometry. Grey and red sherds found in layer II are suspected to...
IMPLANTATION OF 129mTe IN Fe AND Ni FOILS AND DETERMINATION OF THE HYPERFINE FIELDS (1974)
Coussement, R., Dumont, G., Langouche, G., Pattyn, H., Rots, M., Schmidt, K., ...
By means of the Mössbauer effect we have studied the positions of ions of 129mTe implanted by an isotope separator at 75 kV acceleration voltage. For implantations in iron, only one implantation...
STUDY OF THE MAGNETIC INTERACTION AT 129mXE IMPLANTED IN IRON (1974)
Van Rossum, M., Langouche, G., Pattyn, H., Dumont, G., Odeurs, J., Meykens, A., ...
The magnetic interaction at 129Xe was studied by implanting 129mXe activity in iron foils at a dose of 5 × 1012, 5 × 1013 and 1 × 1015 Xe at/cm2. The resulting Mössbauer spectra show a...
Langouche, G., Coussement, R., Van Rossum, M., Schmidt, K.
Mössbauer spectra of 125Te in a Te-lattice have shown a large electric field gradient. At the temperature of liquid helium the values Vzz = — 9.2 ± 1 × 1018 V/cm2 and η = 0.64 ± 0.04...
A MÖSSBAUER STUDY ON POTTERY OF TURENG TEPE II (1974)
Schmidt, K., Van Rossum, M., Meykens, T., Langouche, G., Coussement, R., Bouchez, R.
Sherds of pottery of Tureng Tepe, Iran, belonging [1] to the archaeological layer II (2 500 BC) have been analyzed by Mössbauer spectrometry. Grey and red sherds found in layer II are suspected to...
IMPLANTATION OF 129mTe IN Fe AND Ni FOILS AND DETERMINATION OF THE HYPERFINE FIELDS (1974)
Coussement, R., Dumont, G., Langouche, G., Pattyn, H., Rots, M., Schmidt, K., ...
By means of the Mössbauer effect we have studied the positions of ions of 129mTe implanted by an isotope separator at 75 kV acceleration voltage. For implantations in iron, only one implantation...
STUDY OF THE MAGNETIC INTERACTION AT 129mXE IMPLANTED IN IRON (1974)
Van Rossum, M., Langouche, G., Pattyn, H., Dumont, G., Odeurs, J., Meykens, A., ...
The magnetic interaction at 129Xe was studied by implanting 129mXe activity in iron foils at a dose of 5 × 1012, 5 × 1013 and 1 × 1015 Xe at/cm2. The resulting Mössbauer spectra show a...
Langouche, G., Coussement, R., Van Rossum, M., Schmidt, K.
Mössbauer spectra of 125Te in a Te-lattice have shown a large electric field gradient. At the temperature of liquid helium the values Vzz = — 9.2 ± 1 × 1018 V/cm2 and η = 0.64 ± 0.04...