G. Lucovsky

Publication List Details

Period

1972 - 2005

Number

37

Co-Authors

Self-Organization and the Physics of Glassy Networks (2005)

Boolchand, P., Lucovsky, G., Phillips, J. C., Thorpe, M. F.

Network glasses are the physical prototype for many self-organized systems, ranging from proteins to computer science. Conventional theories of gases, liquids, and crystals do not account for the...

SOLID STATE APPLICATION STUDY. (2005)

FISHER,S. T., Lucovsky,G.

The objective of this contract was to conduct a theoretical and experimental investigation of the plasma-like properties of the charge carriers in solid-state materials in order to determine the...

OPTICAL LATTICE MODES OF MIXED POLAR CRYSTALS. (2005)

Burnstein,E., Lucovsky,G., Brodsky,M.

An analysis of the available infrared and Raman spectra for mixed crystals suggests that two mode behavior occurs in situations where localized modes and gap modes are possible in the end members. If...

Band alignment between (100)Si and complex rare earth/transition metal oxides (2004)

Afanasiev, Valeri; U0002690, Stesmans, André; U0014266, Zhao, C, Caymax, M, Heeg, T, Schubert, J, ...

The electron energy band alignment between (100)Si and several complex transition/rare earth (RE) metal oxides (LaScO3, GdScO3, DyScO3, and LaAlO3, all in amorphous form) is determined using a...

Electronic Structure, Amorphous Morphology and Thermal Stability of Transition Metal Oxide and Chalcogenide Alloys (2002)

Lucovsky, G.

This paper is presented to honor Professor Radu Grigorovici at his 90th birthday celebration for his outstanding contributions to the chemical bonding and atomic structure of amorphous...

Low Temprature Growth of Silicon Dioxide Films: A Study of Chemical Bonding by Ellipsometry and Infrared Spectroscopy. (2002)

Lucovsky,G., Manitini,M. J., Srivastava,J. K., Irene,E. A.

This paper presents a spectroscopic study using the techniques of ellipsometry and infrared (ir) absorption spectroscopy of the chemical bonding in silicon dioxide (SiO2) films grown in dry oxygen...

Interface electronic structure of Ta2O5-Al2O3 alloys for Si-field-effect transistor gate dielectric applications (2002)

ULRICH, M, Rowe, J, Johnson, R, Hong, J, Lucovsky, G, Quinton, Jamie, ...

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Interface electronic structure of Ta2O5-Al2O3 alloys for Si-field-effect transistor gate dielectric applications (2002)

ULRICH, M, Rowe, J, Johnson, R, Hong, J, Lucovsky, G, Quinton, Jamie, ...

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Interface electronic structure of Ta2O5-Al2O3 alloys for Si-field-effect transistor gate dielectric applications (2002)

ULRICH, M, Rowe, J, Johnson, R, Hong, J, Lucovsky, G, Quinton, Jamie, ...

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Interface electronic structure of Ta2O5-Al2O3 alloys for Si-field-effect transistor gate dielectric applications (2002)

ULRICH, M, Rowe, J, Johnson, R, Hong, J, Lucovsky, G, Quinton, Jamie, ...

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Interface electronic structure of Ta2O5-Al2O3 alloys for Si-field-effect transistor gate dielectric applications (2002)

ULRICH, M, Rowe, J, Johnson, R, Hong, J, Lucovsky, G, Quinton, Jamie, ...

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Interface electronic structure of Ta2O5-Al2O3 alloys for Si-field-effect transistor gate dielectric applications (2002)

ULRICH, M, Rowe, J, Johnson, R, Hong, J, Lucovsky, G, Quinton, Jamie, ...

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THE DYNAMIC IONIC CHARGE OF ZINCBLENDE TYPE CRYSTALS. (1998)

Burstein,E., Brodsky,M. H., Lucovsky,G.

The ionic charges of zincblende type crystals are discussed. Since the static ionic charges are, in general, quite small in these crystals, the magnitudes of the dynamic ionic charge, (e* sub T), are...

Growth, Characterization and Device Development in Monocrystalline Diamond Films. (1998)

Davis,R. F., Glass,J. T., Lucovsky,G., Bachmann,K. J.

An apparatus for the growth of diamond films by remote or immersed microwave plasma chemical vapor deposition (CVD) has been designed. This system will also be capable of testing the effect of...

Growth, Characterization and Device Development in Monocrystalline Diamond Films. (1998)

Davis, R. F., Glass, J. T., Lucovsky, G., Bachmann, K. J., Nemanich, R. J.

Cu single crystals have been grown and prepared for use as a lattice matched substrate. A literature survey of potential substrates which are both lattice and energy matched with diamond to promote...

Effects of Thermal History on Stress-Related Properties of Very Thin Films of Thermally Grown Silicon Dioxide, SiO2. (1998)

Fitch, J. T., Kobeda, E., Lucovsky, G., Irene, E. A.

This paper presents studies of the infrared (ir) absorbance and the intrinsic stress in thermally grown very thin films (60 Augstroms to 700 Augstroms) of silicon dioxide, SiO2. These data are...

Investigation of Low Temperature Multilevel Dielectrics for Application for Radiation Tolerant, Submicron-Scaled IC Technology. (1998)

Hutchby, J. A., Markunas, R. J., Hattangady, S. V., Fountain, G. G., Lucovsky, G.

During this quarter work has proceeded in mapping out the nitride deposition parameter space. The new ultra high purity reactor is on line and in use. Nitride results show a 2 order of magnitude...

Investigation of Low Temperature Multilevel Dielectrics for Application for Radiation Tolerant, Submicron-Scaled IC Technology. (1998)

Hutchby, J. A., Markunas, R. J., Hattangady, S. V., Fountain, G. G., Lucovsky, G.

The following report details the progress on ONR contract number N-00014-86-C-0421 during the period from July 1, 1989 to September 30, 1989. This program entails a joint effort between Research...

Investigation of Low Temperature Multilevel Dielectrics for Application for Radiation Tolerant, Submicron-Scaled IC Technology. (1998)

Hutchby, J. A., Markunas, R. J., Hattangady, S. V., Fountain, G. G., Lucovsky, G.

The following report details the progress on ONR contract number N-00014-86-C-0421 during the period from January 1 to March 31, 1989. This program entails a joint effort between Research Triangle...

Investigation of Low-Temperature, Multilevel Dielectrics for Application for Radiation Tolerant, Submicron-Scaled IC Technology. (1998)

Markunas, R. J., Fountain, G. G., Lucovsky, G.

The following report details the progress on ONR contract number N-00014-86-C-0421 during the period from January 1, 1991 to December 31, 1991. This program entails a joint effort between Research...

Epitaxial Growth of GaP by Remote Plasma-Enhanced Chemical Vapor Deposition. (1998)

Choi, S. W., Bachmann, K. J., Lucovsky, G.

Epitaxial films of gallium phosphide GaP, have been grown by remote plasma enhanced chemical vapor deposition on GaP and Si substrates. Atomic hydrogen and phosphorus hydrides are generated from...

SECOND ORDER VIBRATIONAL SPECTRA OF VITREOUS SILICA. (1998)

GALLEENER, F. L., LUCOVSKY, G.

Raman spectra were observed in several glasses. A preliminary report is made on the Raman and IR line spectra of vitreous silica in the region 100 cm(-1) to 3000 cm(-1). It is shown that the features...

Coupled electron-hole dynamics at the Si/SiO2 interface (1998)

Wang, W., Lupke, G., Di Ventra, M., Pantelides, S. T., Gilligan, J. M., Tolk, N. H., ...

We report a new and surprising enhancement of the electric field at the Si/SiO2 interface following the cessation of intense pulsed near-infrared radiation. The phenomenon, measured by optical...

CHEMICAL BONDING OF ALLOY AND DOPANT ATOMS IN AMORPHOUS SILICON (1981)

Lucovsky, G.

The chemical bonding environments of Si and dopant atoms in alloys of a-Si are characterized through a local electronegativity. This parameter is used as a scaling variable for empirical relations...

PHONON DENSITIES OF STATES AND EIGENVECTORS IN HYDROGENATED AND FLUORINATED AMORPHOUS SILICON (1981)

Pollard, W., Lucovsky, G.

A study of the vibrational properties of amorphous silicon alloys is presented. Using the Cluster-Bethe-lattice method and isolated cluster calculations, local densities of states spectra and...

CHEMICAL BONDING OF ALLOY AND DOPANT ATOMS IN AMORPHOUS SILICON (1981)

Lucovsky, G.

The chemical bonding environments of Si and dopant atoms in alloys of a-Si are characterized through a local electronegativity. This parameter is used as a scaling variable for empirical relations...

PHONON DENSITIES OF STATES AND EIGENVECTORS IN HYDROGENATED AND FLUORINATED AMORPHOUS SILICON (1981)

Pollard, W., Lucovsky, G.

A study of the vibrational properties of amorphous silicon alloys is presented. Using the Cluster-Bethe-lattice method and isolated cluster calculations, local densities of states spectra and...

CHEMICAL BONDING OF ALLOY AND DOPANT ATOMS IN AMORPHOUS SILICON (1981)

Lucovsky, G.

The chemical bonding environments of Si and dopant atoms in alloys of a-Si are characterized through a local electronegativity. This parameter is used as a scaling variable for empirical relations...

PHONON DENSITIES OF STATES AND EIGENVECTORS IN HYDROGENATED AND FLUORINATED AMORPHOUS SILICON (1981)

Pollard, W., Lucovsky, G.

A study of the vibrational properties of amorphous silicon alloys is presented. Using the Cluster-Bethe-lattice method and isolated cluster calculations, local densities of states spectra and...