H. Nakagawa, H. Akoh, M. Aoyagi, T. Taino, K. Inaba, Y. Kino
Abstract---Superconducting tunnel junctions (STJ), with a buffer layer between the silicon substrate and junction, are being developed for use as highresolution x-ray detectors. Aluminum-oxide...
Optical probe of electrostatic doping in an n-type Mott insulator (2007)
Nakamura, M., Sawa, A., Sato, H., Akoh, H., Kawasaki, M., Tokura, Y.
Electrostatic doping into an $n$-type Mott insulator Sm$_{2}$CuO$_{4}$ has been successfully achieved with use of the heterojunction with an $n$-type band semiconductor Nb-doped SrTiO$_{3}$. The...
Fujii, T., Kawasaki, M., Sawa, A., Akoh, H., Kawazoe, Y., Tokura, Y.
Transport properties have been studied for a perovskite heterojunction consisting of SrRuO$_{3}$ (SRO) film epitaxially grown on SrTi$_{0.99}$Nb$_{0.01}$O$_{3}$ (Nb:STO) substrate. The SRO/Nb:STO...
Field Effect Transistor Based on KTaO3 Perovskite (2003)
Ueno, K., Inoue, I. H., Yamada, T., Akoh, H., Tokura, Y., Takagi, H.
An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The...
Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator (2003)
Ueno, K., Inoue, I. H., Akoh, H., Kawasaki, M., Tokura, Y., Takagi, H.
A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to...