Irradiation-induced Ag nanocluster nucleation in silicate glasses: analogy with photography (2007)
De Lamaestre, R. Espiau, Béa, H., Bernas, H., Belloni, J., Marignier, J. L.
The synthesis of Ag nanoclusters in sodalime silicate glasses and silica was studied by optical absorption (OA) and electron spin resonance (ESR) experiments under both low (gamma-ray) and high (MeV...
Irradiation-induced Ag nanocluster nucleation in silicate glasses: analogy with photography (2007)
De Lamaestre, R. Espiau, Béa, H., Bernas, H., Belloni, J., Marignier, J. L.
The synthesis of Ag nanoclusters in sodalime silicate glasses and silica was studied by optical absorption (OA) and electron spin resonance (ESR) experiments under both low (gamma-ray) and high (MeV...
Ordering intermetallic alloys by ion irradiation: a way to tailor magnetic media (2006)
Bernas, H., Attane, J.-Ph., Heinig, K.H., Halley, D., Ravelosona, D., Marty, A., ...
How chemistry affects the ion beam synthesis of PbS nanocrystals (2006)
Bernas, H., Ricolleau, C., Majimel, J.
Solid state chemical reactions involving the multiple oxidation states of sulfur are shown to dominate the synthesis of PbS nanocrystals in pure silica via co-implantation and annealing. The...
Significance of lognormal nanocrystal size distributions (2006)
Metallic or semiconductor nanocrystals produced by very different techniques often display size distributions whose limiting shape (e.g., after long annealing times) is self-preserving and close to...
PbS nanocrystal synthesis in Pb-containing silicate glasses (2005)
We describe a synthesis of PbS nanocrystals in glasses, involving 150 keV sulfur implantation into Pb-containing silicate glasses at peak concentrations up to 3.6 at. % and postannealing around the...
Chimot, N., Mangeney, J., Joulaud, L., Crozat, P., Bernas, H., Blary, K., ...
We investigate terahertz (THz) emission from heavy-ion-irradiated In0.53Ga0.47As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In0.53Ga0.47As layer is...
Chimot, N., Mangeney, J., Joulaud, L., Crozat, P., Bernas, H., Blary, K., ...
We investigate terahertz (THz) emission from heavy-ion-irradiated In0.53Ga0.47As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In0.53Ga0.47As layer is...
Synthesis of Lead Chalcogenide Nanocrystals by Sequential Ion Implantation in Silica (2005)
Majimel, J., Jomard, F., Bernas, H.
Lead chalcogenide (PbS, PbSe, and PbTe) nanocrystals were synthesized by sequential implantation of Pb and one of the chalcogen species into pure silica. The implantation energy and fluence were...
Diffusion properties of chalcogens (S, Se, Te) into pure silica (2005)
Jomard, F., Majimel, J., Bernas, H.
The diffusion properties of chalcogens (S, Se, Te) implanted into SiO2 were studied via secondary ion mass spectroscopy (SIMS) profiling between room temperature and the glass transition temperature...
Enhancing domain wall motion in magnetic wires by ion irradiation (2005)
Cayssol, F., L. Menéndez, J., Ravelosona, D., Chappert, C., Ferré, J., ...
The influence of low-energy He ion irradiation on the dynamics of a single Bloch domain wall was studied in magnetic wires based on Pt/Co/Pt trilayers exhibiting perpendicular anisotropy. The domain...
Deroughening of Domain Wall Pairs by Dipolar Repulsion (2005)
Bauer, M., Mougin, A., P. Jamet, J., Repain, V., Ferré, J., L. Stamps, R., ...
As a magnetic domain wall propagates under small fields through a random potential, it roughens as a result of weak collective pinning, known as creep. Using Kerr microscopy, we report experimental...
In situ transmission electron microscopy ion irradiation studies at Orsay (2005)
Fortuna, F., Bernas, H., Chaumont, J., Kaïfktasov, O., Borodin, V.A.
Crucial features of materials evolution due to ion beam irradiation are often revealed only through studies of process dynamics. We review some significant examples of such experiments performed over...
PbS nanocrystal synthesis in Pb-containing silicate glasses (2005)
We describe a synthesis of PbS nanocrystals in glasses, involving 150 keV sulfur implantation into Pb-containing silicate glasses at peak concentrations up to 3.6 at. % and postannealing around the...
Chimot, N., Mangeney, J., Joulaud, L., Crozat, P., Bernas, H., Blary, K., ...
We investigate terahertz (THz) emission from heavy-ion-irradiated In0.53Ga0.47As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In0.53Ga0.47As layer is...
Chimot, N., Mangeney, J., Joulaud, L., Crozat, P., Bernas, H., Blary, K., ...
We investigate terahertz (THz) emission from heavy-ion-irradiated In0.53Ga0.47As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In0.53Ga0.47As layer is...
Synthesis of Lead Chalcogenide Nanocrystals by Sequential Ion Implantation in Silica (2005)
Majimel, J., Jomard, F., Bernas, H.
Lead chalcogenide (PbS, PbSe, and PbTe) nanocrystals were synthesized by sequential implantation of Pb and one of the chalcogen species into pure silica. The implantation energy and fluence were...
Diffusion properties of chalcogens (S, Se, Te) into pure silica (2005)
Jomard, F., Majimel, J., Bernas, H.
The diffusion properties of chalcogens (S, Se, Te) implanted into SiO2 were studied via secondary ion mass spectroscopy (SIMS) profiling between room temperature and the glass transition temperature...
Enhancing domain wall motion in magnetic wires by ion irradiation (2005)
Cayssol, F., L. Menéndez, J., Ravelosona, D., Chappert, C., Ferré, J., ...
The influence of low-energy He ion irradiation on the dynamics of a single Bloch domain wall was studied in magnetic wires based on Pt/Co/Pt trilayers exhibiting perpendicular anisotropy. The domain...
Deroughening of Domain Wall Pairs by Dipolar Repulsion (2005)
Bauer, M., Mougin, A., P. Jamet, J., Repain, V., Ferré, J., L. Stamps, R., ...
As a magnetic domain wall propagates under small fields through a random potential, it roughens as a result of weak collective pinning, known as creep. Using Kerr microscopy, we report experimental...
In situ transmission electron microscopy ion irradiation studies at Orsay (2005)
Fortuna, F., Bernas, H., Chaumont, J., Kaïfktasov, O., Borodin, V.A.
Crucial features of materials evolution due to ion beam irradiation are often revealed only through studies of process dynamics. We review some significant examples of such experiments performed over...
Magnetisation reversal dynamics in an ultrathin magnetic film and the creep phenomenon (2004)
Ferre, J., Repain, V., Jamet, J.P., Mougin, A., Mathet, V., Chappert, C., ...
Magnetisation reversal dynamics in an ultrathin magnetic film and the creep phenomenon (2004)
Ferre, J., Repain, V., Jamet, J.P., Mougin, A., Mathet, V., Chappert, C., ...
Shrinkage mechanism of nanocavities in amorphous Si under ion irradiation: An in situ study (2003)
Ruault, M.O., Ridgway, M.C., Fortuna, F., Bernas, H., Williams, J.S.
Ion beam photography in sol-gel NiO-SiO2 films (2003)
Canut, B., Merlen, A., Teodorescu, V., Ghica, C., Sandu, C.S., Ramos, S.M.M., ...
Magnetic phase diagrams of He ion-irradiated Pt/Co/Pt ultrathin films (2003)
Ferre, J., Devolder, T., Bernas, H., Jamet, J.P., Repain, V., Bauer, M., ...
Ordering intermetallic alloys by ion irradiation: a way to tailor magnetic media (2003)
Bernas, H., Attane, J.-Ph., Heinig, K.H., Halley, D., Ravelosona, D., Marty, A., ...
Shrinkage mechanism of nanocavities in amorphous Si under ion irradiation: An in situ study (2003)
Ruault, M.O., Ridgway, M.C., Fortuna, F., Bernas, H., Williams, J.S.
Ion beam photography in sol-gel NiO-SiO2 films (2003)
Canut, B., Merlen, A., Teodorescu, V., Ghica, C., Sandu, C.S., Ramos, S.M.M., ...
Magnetic phase diagrams of He ion-irradiated Pt/Co/Pt ultrathin films (2003)
Ferre, J., Devolder, T., Bernas, H., Jamet, J.P., Repain, V., Bauer, M., ...
Ordering intermetallic alloys by ion irradiation: a way to tailor magnetic media (2003)
Bernas, H., Attane, J.-Ph., Heinig, K.H., Halley, D., Ravelosona, D., Marty, A., ...
Sampaio, L., Mougin, A., Ferre, J., Georges, P., Brun, A., Bernas, H., ...
Second harmonic generation magneto-optic Kerr effect (SHMOKE) experiments, sensitive to buried interfaces, were performed on a polycrystalline NiFe/FeMn bilayer in which areas with different exchange...
Ordering intermetallic alloys by ion irradiation: a way to tailor magnetic media (2002)
Bernas, H., Halley, D., Attane, J. -Ph., Ravelosona, D., Marty, A., ...
Combining He ion irradiation and thermal mobility below 600K, we both trigger and control the transformation from chemical disorder to order in thin films of an intermetallic ferromagnet (FePd)....
Atomic and Condensed Matter Physics (2002)
Andersen,L.H., Balanzat,E., Bernas,H., Burgdörfer,J., Cohen,C., Correia,J.G., ...
NuPECC Report, Nuclear Science in Europe: Impact Applications Interactions
Chemical ordering at low temperatures in FePd films (2002)
Ravelosona, D., Chappert, C., Bernas, H., Halley, D., Samson, Y., Marty, A.
How nanocavities in amorphous Si shrink under ion beam irradiation: An in situ study (2002)
Ruault, M.O., Fortuna, F., Bernas, H., Ridgway, M.C., Williams, J.S.
Chemical ordering at low temperatures in FePd films (2002)
Ravelosona, D., Chappert, C., Bernas, H., Halley, D., Samson, Y., Marty, A.
How nanocavities in amorphous Si shrink under ion beam irradiation: An in situ study (2002)
Ruault, M.O., Fortuna, F., Bernas, H., Ridgway, M.C., Williams, J.S.
Atomic and Condensed Matter Physics (2002)
Andersen, L.H., Balanzat, E., Bernas, H., Burgdörfer, J., Cohen, C., Correia, J.G., ...
NuPECC Report, Nuclear Science in Europe: Impact Applications Interactions
Druron, F., Valentine, G.J., Chenais, S., Raybaut, P., Balembois, F., Georges, P., ...
Femtosecond modelocked lasers using new ytterbium-doped borate crystals (Yb:Sr3Y(BO3)(3), Yb: Ca4GdO(BO3)(3) and Yb: Ca4YO(BO3)(3)) are demonstrated. Pulse duration as short as 69 fs has been...
Druron, F., Valentine, G.J., Chenais, S., Raybaut, P., Balembois, F., Georges, P., ...
Femtosecond modelocked lasers using new ytterbium-doped borate crystals (Yb:Sr3Y(BO3)(3), Yb: Ca4GdO(BO3)(3) and Yb: Ca4YO(BO3)(3)) are demonstrated. Pulse duration as short as 69 fs has been...
Druron, F., Valentine, G.J., Chenais, S., Raybaut, P., Balembois, F., Georges, P., ...
Femtosecond modelocked lasers using new ytterbium-doped borate crystals (Yb:Sr3Y(BO3)(3), Yb: Ca4GdO(BO3)(3) and Yb: Ca4YO(BO3)(3)) are demonstrated. Pulse duration as short as 69 fs has been...
Interactions of point defects and impurities with open volume defects in silicon (2001)
Williams, J.S., Ridgway, M.C., Conway, M.J., Wong Leung, J., Williams, B.C., Petravic, M., ...
Magnetic properties of He$^+$-irradiated Pt/Co/Pt ultrathin films (2001)
Devolder, T., Ferre, J., Chappert, C., Bernas, H., Jamet, J.P., Mathet, V.
Direct observation of irradiation-induced nanocavity shrinkage in Si (2001)
Zhu, X.F., Williams, J.S., Conway, M.J., Ridgway, M.C., Fortuna, F., Ruault, M.O., ...
Irradiation-induced magnetic patterning in magnetic multilayers (2001)
Ravelosona, D., Devolder, T., Chappert, C., Bernas, H., Chen, Y., Jamet, J.P., ...
Magnetic properties of irradiated highly anisotropic materials (2001)
Ravelosona, D., Devolder, T., Bernas, H., Chappert, C., Mathet, V., Halley, D., ...
Interaction of defects and metals with nanocavities in silicon (2001)
Williams, J.S., Ridgway, M.C., Conway, M.J., Wong-Leung, J., Zhu, X.F., Petravic, M., ...
Interactions of point defects and impurities with open volume defects in silicon (2001)
Williams, J.S., Ridgway, M.C., Conway, M.J., Wong Leung, J., Williams, B.C., Petravic, M., ...
Magnetic properties of He$^+$-irradiated Pt/Co/Pt ultrathin films (2001)
Devolder, T., Ferre, J., Chappert, C., Bernas, H., Jamet, J.P., Mathet, V.
Direct observation of irradiation-induced nanocavity shrinkage in Si (2001)
Zhu, X.F., Williams, J.S., Conway, M.J., Ridgway, M.C., Fortuna, F., Ruault, M.O., ...
Irradiation-induced magnetic patterning in magnetic multilayers (2001)
Ravelosona, D., Devolder, T., Chappert, C., Bernas, H., Chen, Y., Jamet, J.P., ...
Magnetic properties of irradiated highly anisotropic materials (2001)
Ravelosona, D., Devolder, T., Bernas, H., Chappert, C., Mathet, V., Halley, D., ...
Interaction of defects and metals with nanocavities in silicon (2001)
Williams, J.S., Ridgway, M.C., Conway, M.J., Wong-Leung, J., Zhu, X.F., Petravic, M., ...
Kachurin, G.A., Yanovskaya, S.G., Ruault, M.O., Gutakovskii, A.K., Zhuravlev, K.S., Kaitasov, O., ...
High resolution magnetic patterning using focused ion beam irradiation (2000)
Vieu, C., Gierk, J., Launois, H., Aign, T., Meyer, P., Jamet, J.P., ...
Magnetization reversal in irradiation-fabricated nanostructures (2000)
Devolder, T., Chappert, C., Mathet, V., Bernas, H., Chen, Y., Jamet, J.P., ...
Damage kinetics in MeV gold ion - Irradiated crystalline quartz (2000)
Ramos, S.M.M., Clerc, C., Canut, B., Chaumont, J., Toulemonde, M., Bernas, H.
Kachurin, G.A., Yanovskaya, S.G., Ruault, M.O., Gutakovskii, A.K., Zhuravlev, K.S., Kaitasov, O., ...
High resolution magnetic patterning using focused ion beam irradiation (2000)
Vieu, C., Gierk, J., Launois, H., Aign, T., Meyer, P., Jamet, J.P., ...
Magnetization reversal in irradiation-fabricated nanostructures (2000)
Devolder, T., Chappert, C., Mathet, V., Bernas, H., Chen, Y., Jamet, J.P., ...
Damage kinetics in MeV gold ion - Irradiated crystalline quartz (2000)
Ramos, S.M.M., Clerc, C., Canut, B., Chaumont, J., Toulemonde, M., Bernas, H.
Valentine, G.J., Kemp, A., Burns, D., Balembois, F., Georges, P., Bernas, H., ...
Paper discussing the application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold yb:YCOB laser.
Patterning of planar magnetic nanostructures by ion irradiation (1999)
Devolder, T., Chappert, C., Chen, Y., Cambril, E., Launois, H., Bernas, H., ...
Ion beam-induced magnetic patterning at the sub-0.1 mu m level (1999)
Devolder, T., Vieu, C., Bernas, H., Ferre, J., Chappert, C., Gierak, J., ...
Irradiation induced effects on magnetic properties of Pt/Co/Pt ultrathin films (1999)
Ferre, J., Chappert, C., Bernas, H., Jamet, J.P., Meyer, P., Kaitasov, O., ...
Sub-50 nm planar magnetic nanostructures fabricated by ion irradiation (1999)
Devolder, T., Chappert, C., Chen, Y., Cambril, E., Bernas, H., Jamet, J.P., ...
Light particle irradiation effects in Si nanocrystals (1999)
Kachurin, G.A., Ruault, M.O., Gutakovsky, A.K., Kaitasov, O., Yanovskaya, S.G., Zhuravlev, K.S., ...
Ion beam induced magnetic nanostructure patterning (1999)
Bernas, H., Devolder, T., Chappert, C., Ferre, J., Kottler, V., Chen, Y., ...
Patterning of planar magnetic nanostructures by ion irradiation (1999)
Devolder, T., Chappert, C., Chen, Y., Cambril, E., Launois, H., Bernas, H., ...
Ion beam-induced magnetic patterning at the sub-0.1 mu m level (1999)
Devolder, T., Vieu, C., Bernas, H., Ferre, J., Chappert, C., Gierak, J., ...
Irradiation induced effects on magnetic properties of Pt/Co/Pt ultrathin films (1999)
Ferre, J., Chappert, C., Bernas, H., Jamet, J.P., Meyer, P., Kaitasov, O., ...
Sub-50 nm planar magnetic nanostructures fabricated by ion irradiation (1999)
Devolder, T., Chappert, C., Chen, Y., Cambril, E., Bernas, H., Jamet, J.P., ...
Light particle irradiation effects in Si nanocrystals (1999)
Kachurin, G.A., Ruault, M.O., Gutakovsky, A.K., Kaitasov, O., Yanovskaya, S.G., Zhuravlev, K.S., ...
Ion beam induced magnetic nanostructure patterning (1999)
Bernas, H., Devolder, T., Chappert, C., Ferre, J., Kottler, V., Chen, Y., ...
Giant metal sputtering yields induced by 20-5000 keV/atom gold clusters (1998)
Andersen, H H, Brunelle, A, Della Negra, S, Depauw, J, Jacquet, D, Le Beyec, Y, ...
Aign, T., Meyer, P., Lemerle, S., Jamet, J.P., Ferre, J., Mathet, V., ...
Giant Metal Sputtering Yields Induced by 20-5000 keV/atom Gold Clusters (1998)
Andersen, H.H., Brunelle, A., Della-Negra, S., Depauw, J., Jacquet, D., Le Beyec, Y., ...
Planar Patterned Magnetic Media Obtained by Ion Irradiation (1998)
Chappert, C., Bernas, H., Ferre, J., Kottler, V., Chen, Y., ...
Aign, T., Meyer, P., Lemerle, S., Jamet, J.P., Ferre, J., Mathet, V., ...
Giant Metal Sputtering Yields Induced by 20-5000 keV/atom Gold Clusters (1998)
Andersen, H.H., Brunelle, A., Della-Negra, S., Depauw, J., Jacquet, D., Le Beyec, Y., ...
Planar Patterned Magnetic Media Obtained by Ion Irradiation (1998)
Chappert, C., Bernas, H., Ferre, J., Kottler, V., Chen, Y., ...
Defect creation by MeV clusters in LiNbO$_3$ (1997)
Canut, B., Ramos, S., Bonardi, N., Chaumont, J., Bernas, H., Cottereau, E.
Giant sputtering rates from SiO (SiO$_2$) irradiated by carbon clusters (1997)
Chaumont, J., Bernas, H., Kusnetsov, A., Clerc, C., Dumoulin, L.
Defect creation by MeV clusters in LiNbO$_3$ (1997)
Canut, B., Ramos, S., Bonardi, N., Chaumont, J., Bernas, H., Cottereau, E.
Giant sputtering rates from SiO (SiO$_2$) irradiated by carbon clusters (1997)
Chaumont, J., Bernas, H., Kusnetsov, A., Clerc, C., Dumoulin, L.
Irradiation induced growth of CoSi$_2$ precipitates in Si at 650 degrees C: an in situ study (1996)
Palard, M., Ruault, M.O., Kaitasov, O., Bernas, H., Heinig, K.H.
Irradiation induced growth of CoSi$_2$ precipitates in Si at 650 degrees C: an in situ study (1996)
Palard, M., Ruault, M.O., Kaitasov, O., Bernas, H., Heinig, K.H.
Erbium doping of silicon and silicon carbide using ion beam induced epitaxial crystallization (1995)
Boucaud, P., Julien, F.H., Lourtioz, J.M., Bernas, H., Clerc, C., Chaumont, J., ...
The road to Fe$_16$N$_2$ formation in N$^+$ implanted $^{57}$Fe enriched films (1995)
Leroy, E., Djega-Mariadassou, C., Bernas, H., Kaitasov, O., Krishnan, R., Tessier, M.
Moessbauer characterization of $\gamma$-FeSi$_2$ precipitates in Si(100) (1995)
Desimoni, J., Sanchez, F.H., Fernandez Van Raap, M.B., Bernas, H., Clerc, C., Lin, X.W.
Ion beam-induced interfacial growth in Si and silicides (1995)
Fortuna, F., Nedellec, P., Ruault, M.O., Bernas, H., Lin, X.W., Boucaud, P.
Deep erbium-ytterbium implantation codoping of low-loss silicon oxynitride waveguides (1995)
Chelnokov, A.V., Lourtioz, J.M., Boucaud, P., Bernas, H., Chaumont, J., Plowman, T.
Cluster irradiation of multilayers: mixing by electronic energy deposition (1995)
Layadi, N., Bernas, H., Garrido, G., Chaumont, J., Dumoulin, L.
Erbium doping of silicon and silicon carbide using ion beam induced epitaxial crystallization (1995)
Boucaud, P., Julien, F.H., Lourtioz, J.M., Bernas, H., Clerc, C., Chaumont, J., ...
The road to Fe$_16$N$_2$ formation in N$^+$ implanted $^{57}$Fe enriched films (1995)
Leroy, E., Djega-Mariadassou, C., Bernas, H., Kaitasov, O., Krishnan, R., Tessier, M.
Moessbauer characterization of $\gamma$-FeSi$_2$ precipitates in Si(100) (1995)
Desimoni, J., Sanchez, F.H., Fernandez Van Raap, M.B., Bernas, H., Clerc, C., Lin, X.W.
Ion beam-induced interfacial growth in Si and silicides (1995)
Fortuna, F., Nedellec, P., Ruault, M.O., Bernas, H., Lin, X.W., Boucaud, P.
Deep erbium-ytterbium implantation codoping of low-loss silicon oxynitride waveguides (1995)
Chelnokov, A.V., Lourtioz, J.M., Boucaud, P., Bernas, H., Chaumont, J., Plowman, T.
Cluster irradiation of multilayers: mixing by electronic energy deposition (1995)
Layadi, N., Bernas, H., Garrido, G., Chaumont, J., Dumoulin, L.
Comparison between ion beam and thermal annealing-induced solid epitaxy in Fe-implanted Si (1994)
Lin, X.W., Desimoni, J., Bernas, H., Liliental-Weber, Z., Washburn, J.
Deep high-dose erbium implantation of low-loss silicon oxynitride waveguides (1994)
Chelnokov, A.V., Lourtioz, J.M., Boucaud, P., Bernas, H., Chaumont, J., Plowman, T.
Comparison between ion beam and thermal annealing-induced solid epitaxy in Fe-implanted Si (1994)
Lin, X.W., Desimoni, J., Bernas, H., Liliental-Weber, Z., Washburn, J.
Deep high-dose erbium implantation of low-loss silicon oxynitride waveguides (1994)
Chelnokov, A.V., Lourtioz, J.M., Boucaud, P., Bernas, H., Chaumont, J., Plowman, T.
Nédellec, P., Dumoulin, L., Burger, J., Bernas, H., Köstler, H., Traverse, A.
Metastable MgHx hydride was prepared by H ion implantation into Mg films at 5 K. The resistivity and magnetoresistance temperature dependence reveal weak localization effects due to atomic disorder....
Nb-Si thin film as thermometers for low temperature bolometers (1993)
Dumoulin, L., Berge, L., Lesueur, J., Bernas, H., Chapellier, M.
Low-temperature ion-induced epitaxial growth of alpha-FeSi$_2$ and cubic FeSi$_2$ in Si (1993)
Lin, X.W., Behar, M., Desimoni, J., Bernas, H., Washburn, J., Liliental-Weber, Z.
Ion beam synthesis of cubic FeSi$_2$ (1993)
Desimoni, J., Bernas, H., Behar, M., Lin, X.W., Washburn, J., Liliental-Weber, Z.
Evolution of cubic FeSi$_2$ in Si upon thermal annealing (1993)
Lin, X.W., Desimoni, J., Bernas, H., Liliental-Weber, Z., Washburn, J.
Nb-Si thin film as thermometers for low temperature bolometers (1993)
Dumoulin, L., Berge, L., Lesueur, J., Bernas, H., Chapellier, M.
Low-temperature ion-induced epitaxial growth of alpha-FeSi$_2$ and cubic FeSi$_2$ in Si (1993)
Lin, X.W., Behar, M., Desimoni, J., Bernas, H., Washburn, J., Liliental-Weber, Z.
Ion beam synthesis of cubic FeSi$_2$ (1993)
Desimoni, J., Bernas, H., Behar, M., Lin, X.W., Washburn, J., Liliental-Weber, Z.
Evolution of cubic FeSi$_2$ in Si upon thermal annealing (1993)
Lin, X.W., Desimoni, J., Bernas, H., Liliental-Weber, Z., Washburn, J.
Nédellec, P., Dumoulin, L., Burger, J., Bernas, H., Köstler, H., Traverse, A.
Metastable MgHx hydride was prepared by H ion implantation into Mg films at 5 K. The resistivity and magnetoresistance temperature dependence reveal weak localization effects due to atomic disorder....
Nédellec, P., Dumoulin, L., Burger, J., Bernas, H., Köstler, H., Traverse, A.
Metastable MgHx hydride was prepared by H ion implantation into Mg films at 5 K. The resistivity and magnetoresistance temperature dependence reveal weak localization effects due to atomic disorder....
Nédellec, P., Dumoulin, L., Burger, J., Bernas, H., Köstler, H., Traverse, A.
Metastable MgHx hydride was prepared by H ion implantation into Mg films at 5 K. The resistivity and magnetoresistance temperature dependence reveal weak localization effects due to atomic disorder....
Progress report on aramis the 2 MV tandem at Orsay (1992)
Bernas, H., Chaumont, J., Cottereau, E., Meunier, R., Traverse, A., Clerc, C., ...
Low-energy erbium implanted Si$_3$N$_4$ SiO$_2$ Si waveguides (1992)
Lumholt, O., Bernas, H., Chabli, A., Chaumont, J., Grand, G., Valette, S.
Progress report on aramis the 2 MV tandem at Orsay (1992)
Bernas, H., Chaumont, J., Cottereau, E., Meunier, R., Traverse, A., Clerc, C., ...
Low-energy erbium implanted Si$_3$N$_4$ SiO$_2$ Si waveguides (1992)
Lumholt, O., Bernas, H., Chabli, A., Chaumont, J., Grand, G., Valette, S.
A new hydride: MgH$_x$ prepared by ion implantation (1991)
Kostler, H., Traverse, A., Nedellec, P., Dumoulin, L., Ruault, M.O., Schlapbach, L., ...
A new hydride: MgH$_x$ prepared by ion implantation (1991)
Kostler, H., Traverse, A., Nedellec, P., Dumoulin, L., Ruault, M.O., Schlapbach, L., ...
Structural effect of heavy ion irradiation on GdBaCuO ceramics (1990)
Bernas, H., Gasgnier, M., Noel, H., Gougeon, P., ...
The influence of twin boundaries as sinks on defects induced by 480 keV Kr ion irradiation in GdBaCuO crystals was observed in situ at 40 and 300 K. The interaction of the dislocations with the twin...
Structural effect of heavy ion irradiation on GdBaCuO ceramics (1990)
Ruault, M.O., Bernas, H., Gasgnier, M., Levet, J.C., Noel, H., Gougeon, P., ...
Ion beam irradiation studies of high temperature superconductors (1990)
Bernas, H., Lesueur, J., Nedellec, P., Ruault, M.O., Dumoulin, L., Burger, J.P.
Depairing-like variation of T$_c$ in YBa$_2$Cu$_3$O$_{7-\delta}$ (1990)
Lesueur, J., Nedellec, P., Bernas, H., Burger, J.P., Dumoulin, L.
Aramis: an ambidextrous 2 MV accelerator for IBA and MeV implantation (1990)
Cottereau, E., Camplan, J., Chaumont, J., Meunier, R., Bernas, H.
Structural effect of heavy ion irradiation on GdBaCuO ceramics (1990)
Ruault, M.O., Bernas, H., Gasgnier, M., Levet, J.C., Noel, H., Gougeon, P., ...
Ion beam irradiation studies of high temperature superconductors (1990)
Bernas, H., Lesueur, J., Nedellec, P., Ruault, M.O., Dumoulin, L., Burger, J.P.
Depairing-like variation of T$_c$ in YBa$_2$Cu$_3$O$_{7-\delta}$ (1990)
Lesueur, J., Nedellec, P., Bernas, H., Burger, J.P., Dumoulin, L.
Aramis: an ambidextrous 2 MV accelerator for IBA and MeV implantation (1990)
Cottereau, E., Camplan, J., Chaumont, J., Meunier, R., Bernas, H.
Structural effect of heavy ion irradiation on GdBaCuO ceramics (1990)
Bernas, H., Gasgnier, M., Noel, H., Gougeon, P., ...
The influence of twin boundaries as sinks on defects induced by 480 keV Kr ion irradiation in GdBaCuO crystals was observed in situ at 40 and 300 K. The interaction of the dislocations with the twin...
Structural effect of heavy ion irradiation on GdBaCuO ceramics (1990)
Bernas, H., Gasgnier, M., Noel, H., Gougeon, P., ...
The influence of twin boundaries as sinks on defects induced by 480 keV Kr ion irradiation in GdBaCuO crystals was observed in situ at 40 and 300 K. The interaction of the dislocations with the twin...
Structural effect of heavy ion irradiation on GdBaCuO ceramics (1990)
Bernas, H., Gasgnier, M., Noel, H., Gougeon, P., ...
The influence of twin boundaries as sinks on defects induced by 480 keV Kr ion irradiation in GdBaCuO crystals was observed in situ at 40 and 300 K. The interaction of the dislocations with the twin...
Structural change induced in Kr irradiated RBaCuO ceramics (R=Gd, Ho) (1989)
Ruault, M.O., Barrachin, M., Lesueur, J., Dumoulin, L., Bernas, H., Gasgnier, M., ...
Nature of the granular structure in low temperature He-irradiated in YBaCuO thin films (1989)
Nedellec, P., Lesueur, J., Traverse, A., Bernas, H., Dumoulin, L., Laibowitz, R.B.
Structural change induced in Kr irradiated RBaCuO ceramics (R=Gd, Ho) (1989)
Ruault, M.O., Barrachin, M., Lesueur, J., Dumoulin, L., Bernas, H., Gasgnier, M., ...
Nature of the granular structure in low temperature He-irradiated in YBaCuO thin films (1989)
Nedellec, P., Lesueur, J., Traverse, A., Bernas, H., Dumoulin, L., Laibowitz, R.B.
Relation of transport properties to microstructure of implanted Ni$_{1-x}$P$_x$ alloys (1988)
Traverse, A., Paumier, E., Nedellec, P., Bernas, H., Dumoulin, L., Chaumont, J.
Study of ion beam mixed multilayers via neutron scattering (1988)
Le Boite, M.G., Traverse, A., Bernas, H., Janot, C., Chevrier, J.
Relation of transport properties to microstructure of implanted Ni$_{1-x}$P$_x$ alloys (1988)
Traverse, A., Paumier, E., Nedellec, P., Bernas, H., Dumoulin, L., Chaumont, J.
Study of ion beam mixed multilayers via neutron scattering (1988)
Le Boite, M.G., Traverse, A., Bernas, H., Janot, C., Chevrier, J.
Mechanism of ion induced amorphization (1987)
Drigo, A.V., Berti, M., Benyagoub, A., Bernas, H., Pivin, J.C., Pons, F., ...
Ion-induced premartensitic transformation and amorphization in NiAl (1987)
Jaouen, C., Riviere, J.P., Delafond, J., Ruault, M.O., Bernas, H.
Mechanism of ion induced amorphization (1987)
Drigo, A.V., Berti, M., Benyagoub, A., Bernas, H., Pivin, J.C., Pons, F., ...
Ion-induced premartensitic transformation and amorphization in NiAl (1987)
Jaouen, C., Riviere, J.P., Delafond, J., Ruault, M.O., Bernas, H.
Structural study of low-temperature-implanted Ni and Pd hydrides (1986)
Lin, X.W., Ruault, M.O., Traverse, A., Chaumont, J., Salome, M., Bernas, H.
Evidence for the metal-insulator transition in a pure 3D metal (1986)
Nedellec, P., Traverse, A., Dumoulin, L., Bernas, H., Amaral, L., Deutscher, G.
Structural study of low-temperature-implanted Ni and Pd hydrides (1986)
Lin, X.W., Ruault, M.O., Traverse, A., Chaumont, J., Salome, M., Bernas, H.
Evidence for the metal-insulator transition in a pure 3D metal (1986)
Nedellec, P., Traverse, A., Dumoulin, L., Bernas, H., Amaral, L., Deutscher, G.
Transformation to amorphous state of metals by ion implantation : P in Ni (1985)
Cohen, C., Benyagoub, A., Bernas, H., Chaumont, J., Thome, L., Berti, M., ...
Transformation to amorphous state of metals by ion implantation : P in Ni (1985)
Cohen, C., Benyagoub, A., Bernas, H., Chaumont, J., Thome, L., Berti, M., ...
Atomic mixing in insulating crystals containing small metallic aggregates (1984)
Thevenard, P., Treilleux, M., Rualt, M.O., Chaumont, J., Bernas, H.
Amorphization of Pd-Si at 300K (1984)
Fan Xiang, Jun, Traverse, A., Thome, A., Benyagoub, A., Chaumont, J., Bernas, H.
Experimental study of the electron-phonon interaction in AgD$_x$ prepared by implantation (1984)
Traverse, A., Chaumont, J., Benyagoub, A., Bernas, H., Nedellec, P., Burger, J.P.
Resistive and superconducting properties of the amorphous Pd-Si hydride (1984)
Traverse, A., Bernas, H., Chaumont, J., Xiang Jun, Fan, Mendoza-Zelis, L.
Amorphization of tantalum by boron and phosphorus ion implantation (1984)
Thome, L., Benyagoub, A., Bernas, H., Pivin, J.C., Cahn, R.W.
Atomic mixing in insulating crystals containing small metallic aggregates (1984)
Thevenard, P., Treilleux, M., Rualt, M.O., Chaumont, J., Bernas, H.
Amorphization of Pd-Si at 300K (1984)
Fan Xiang, Jun, Traverse, A., Thome, A., Benyagoub, A., Chaumont, J., Bernas, H.
Experimental study of the electron-phonon interaction in AgD$_x$ prepared by implantation (1984)
Traverse, A., Chaumont, J., Benyagoub, A., Bernas, H., Nedellec, P., Burger, J.P.
Resistive and superconducting properties of the amorphous Pd-Si hydride (1984)
Traverse, A., Bernas, H., Chaumont, J., Xiang Jun, Fan, Mendoza-Zelis, L.
Amorphization of tantalum by boron and phosphorus ion implantation (1984)
Thome, L., Benyagoub, A., Bernas, H., Pivin, J.C., Cahn, R.W.
Production and stability of implanted PdSi hydride (1983)
Traverse, A., Mendoza-Zelis, L., Bernas, H., Chaumont, J., Thome, L.
Evidence for implantation-induced impurity diffusion in metals (1983)
Thome, L., Chaumont, J., Traverse, A., Bernas, H., Cohen, C., Berti, M., ...
Production and stability of implanted PdSi hydride (1983)
Traverse, A., Mendoza-Zelis, L., Bernas, H., Chaumont, J., Thome, L.
Evidence for implantation-induced impurity diffusion in metals (1983)
Thome, L., Chaumont, J., Traverse, A., Bernas, H., Cohen, C., Berti, M., ...
In situ channeling study of Ni-P amorphous phase formation (1982)
Cohen, C., Drigo, A.V., Bernas, H., Chaumont, J., Krolas, K., Thome, L.
Electrical properties of amorphous Ni-P alloys produced by ion implantation (1982)
Mendoza-Zelis, L., Thome, L., Brossard, L., Chaumont, J., Krolas, K., Bernas, H.
Electrical properties of the ion-implanted Pd$_{1-x}$B$_x$ system (1982)
Mendoza-Zelis, L., Traverse, A., Chaumont, J., Bernas, H., Dumoulin, L.
Influence of disorder on phonon resistivity of ion-implanted nickel hydride (1982)
Brossard, L., Bernas, H., Thome, L., Traverse, A., Nedellec, P.
TDPAC-study of amorphous NiP alloy produced by ion implantation (1982)
Thome, L., Bernas, H., Heubes, P., Deicher, M., Recknagel, E.
Resistivity and channeling studies of ion-implanted Ni-P and Co-P systems (1982)
Thome, L., Mendoza-Zelis, L., Brossard, L., Krolas, K., Chaumont, J., Bernas, H., ...
In situ channeling study of Ni-P amorphous phase formation (1982)
Cohen, C., Drigo, A.V., Bernas, H., Chaumont, J., Krolas, K., Thome, L.
Electrical properties of amorphous Ni-P alloys produced by ion implantation (1982)
Mendoza-Zelis, L., Thome, L., Brossard, L., Chaumont, J., Krolas, K., Bernas, H.
Electrical properties of the ion-implanted Pd$_{1-x}$B$_x$ system (1982)
Mendoza-Zelis, L., Traverse, A., Chaumont, J., Bernas, H., Dumoulin, L.
Influence of disorder on phonon resistivity of ion-implanted nickel hydride (1982)
Brossard, L., Bernas, H., Thome, L., Traverse, A., Nedellec, P.
TDPAC-study of amorphous NiP alloy produced by ion implantation (1982)
Thome, L., Bernas, H., Heubes, P., Deicher, M., Recknagel, E.
Resistivity and channeling studies of ion-implanted Ni-P and Co-P systems (1982)
Thome, L., Mendoza-Zelis, L., Brossard, L., Krolas, K., Chaumont, J., Bernas, H., ...
Electron-phonon interaction in Pd$_{1-y}$Ni$_y$H$_x$ from electrical resistivity (1981)
Pindor, A.J., Sniadower, L., Dumoulin, L., Nedellec, P., Bernas, H., Burger, J.P.
Search for superconductivity in hydrogen-implanted platinum (1981)
Traverse, A., Bernas, H., Chaumont, J., Dumoulin, L., Gupta, M.
Stability of non-equilibrium nickel hydrides prepared by low-temperature ion implantation (1981)
Brossard, L., Thome, L., Traverse, A., Bernas, H., Chaumont, J., Lalu, F.
Search for superconductivity in ion-implanted Pb-Ge films (1981)
Zawislak, F.C., Bernas, H., Mendoza-Zelis, L., Traverse, A., Chaumont, J., Dumoulin, L.
Formation of epitaxial NiO by oxygen implantation in [100] Ni (1981)
Tosic, M.M., Drigo, A.V., Cohen, C., Thome, L., Chaumont, J., Bernas, H., ...
Evidence for ordered metal hydride production by low temperature ion implantation (1981)
Bernas, H., Traverse, A., Brossard, L., Chaumont, J., Lalu, F., Dumoulin, L.
A medium energy facility for variable temperature implantation and analysis (1981)
Chaumont, J., Lalu, F., Salome, M., Lamoise, A.M., Bernas, H.
Electron-phonon interaction in Pd$_{1-y}$Ni$_y$H$_x$ from electrical resistivity (1981)
Pindor, A.J., Sniadower, L., Dumoulin, L., Nedellec, P., Bernas, H., Burger, J.P.
Search for superconductivity in hydrogen-implanted platinum (1981)
Traverse, A., Bernas, H., Chaumont, J., Dumoulin, L., Gupta, M.
Stability of non-equilibrium nickel hydrides prepared by low-temperature ion implantation (1981)
Brossard, L., Thome, L., Traverse, A., Bernas, H., Chaumont, J., Lalu, F.
Search for superconductivity in ion-implanted Pb-Ge films (1981)
Zawislak, F.C., Bernas, H., Mendoza-Zelis, L., Traverse, A., Chaumont, J., Dumoulin, L.
Formation of epitaxial NiO by oxygen implantation in [100] Ni (1981)
Tosic, M.M., Drigo, A.V., Cohen, C., Thome, L., Chaumont, J., Bernas, H., ...
Evidence for ordered metal hydride production by low temperature ion implantation (1981)
Bernas, H., Traverse, A., Brossard, L., Chaumont, J., Lalu, F., Dumoulin, L.
A medium energy facility for variable temperature implantation and analysis (1981)
Chaumont, J., Lalu, F., Salome, M., Lamoise, A.M., Bernas, H.
AMORPHOUS PD-SI ALLOYS AND HYDRIDES PREPARED BY LOW-TEMPERATURE ION-IMPLANTATION (1980)
Bernas, H., Traverse, A., Zawislak, F., Chaumont, J., Dumoulin, L.
Ion implantation simultaneously produces compositional changes and radiation damage in the target. If the latter is not annealed, amorphization should ultimately result. Can implantation of a...
Amorphous Pd-Si alloys and hydrides prepared by low-temperature ion-implantation (1980)
Bernas, H., Traverse, A., Zawislak, F.C., Chaumont, J., Dumoulin, L.
Amorphous Pd-Si alloys and hydrides prepared by low-temperature ion-implantation (1980)
Bernas, H., Traverse, A., Zawislak, F.C., Chaumont, J., Dumoulin, L.
AMORPHOUS PD-SI ALLOYS AND HYDRIDES PREPARED BY LOW-TEMPERATURE ION-IMPLANTATION (1980)
Bernas, H., Traverse, A., Zawislak, F., Chaumont, J., Dumoulin, L.
Ion implantation simultaneously produces compositional changes and radiation damage in the target. If the latter is not annealed, amorphization should ultimately result. Can implantation of a...
AMORPHOUS PD-SI ALLOYS AND HYDRIDES PREPARED BY LOW-TEMPERATURE ION-IMPLANTATION (1980)
Bernas, H., Traverse, A., Zawislak, F., Chaumont, J., Dumoulin, L.
Ion implantation simultaneously produces compositional changes and radiation damage in the target. If the latter is not annealed, amorphization should ultimately result. Can implantation of a...
AMORPHOUS PD-SI ALLOYS AND HYDRIDES PREPARED BY LOW-TEMPERATURE ION-IMPLANTATION (1980)
Bernas, H., Traverse, A., Zawislak, F., Chaumont, J., Dumoulin, L.
Ion implantation simultaneously produces compositional changes and radiation damage in the target. If the latter is not annealed, amorphization should ultimately result. Can implantation of a...
Resistivity- and perturbed angular correlation-study of implanted nickel hydrides (1978)
Kachnowski, T., Bernas, H., Thome, L., Chaumont, J., Meunier, R., Dumoulin, L.
Resistivity- and perturbed angular correlation-study of implanted nickel hydrides (1978)
Kachnowski, T., Bernas, H., Thome, L., Chaumont, J., Meunier, R., Dumoulin, L.
Percolation and superconductivity in ion-implanted aluminium films (1977)
Meunier, F., Pfeuty, P., Lamoise, A.M., Chaumont, J., Bernas, H., Cohen, C.
Ion implantation of Si and Ge in Al thin films at 8 K produces alloys exhibiting enhanced superconducting transition temperatures (up to 8.35 K for Al 60Si40) and a metal-non metal transition at a...
Percolation and superconductivity in ion-implanted aluminium films (1977)
Meunier, F., Pfeuty, P., Lamoise, A.M., Chaumont, J., Bernas, H., Cohen, C.
Percolation and superconductivity in ion-implanted aluminium films (1977)
Meunier, F., Pfeuty, P., Lamoise, A.M., Chaumont, J., Bernas, H., Cohen, C.
Percolation and superconductivity in ion-implanted aluminium films (1977)
Meunier, F., Pfeuty, P., Lamoise, A.M., Chaumont, J., Bernas, H., Cohen, C.
Ion implantation of Si and Ge in Al thin films at 8 K produces alloys exhibiting enhanced superconducting transition temperatures (up to 8.35 K for Al 60Si40) and a metal-non metal transition at a...
Percolation and superconductivity in ion-implanted aluminium films (1977)
Meunier, F., Pfeuty, P., Lamoise, A.M., Chaumont, J., Bernas, H., Cohen, C.
Ion implantation of Si and Ge in Al thin films at 8 K produces alloys exhibiting enhanced superconducting transition temperatures (up to 8.35 K for Al 60Si40) and a metal-non metal transition at a...
Percolation and superconductivity in ion-implanted aluminium films (1977)
Meunier, F., Pfeuty, P., Lamoise, A.M., Chaumont, J., Bernas, H., Cohen, C.
Ion implantation of Si and Ge in Al thin films at 8 K produces alloys exhibiting enhanced superconducting transition temperatures (up to 8.35 K for Al 60Si40) and a metal-non metal transition at a...
Enhancement of the superconducting transition temperatures in ion-implanted aluminium alloys (1976)
Lamoise, A.M., Chaumont, J., Lalu, F., Meunier, F., Bernas, H.
Random alloys of C, Si, and Ge with Al, prepared by ion implantation at liquid helium temperatures, have maximum superconducting transition temperatures Tc of 4.2 K (C), 7.35 K (Ge) and 8.35 K (Si)....
Enhancement of the superconducting transition temperatures in ion-implanted aluminium alloys (1976)
Lamoise, A.M., Chaumont, J., Lalu, F., Meunier, F., Bernas, H.
Study of the rare-earth oxygen interaction in rare-earth implanted iron (1976)
Thome, L., Bernas, H., Chaumont, J., Abel, F., Bruneaux, M., Cohen, C.
Enhancement of the superconducting transition temperatures in ion-implanted aluminium alloys (1976)
Lamoise, A.M., Chaumont, J., Lalu, F., Meunier, F., Bernas, H.
Study of the rare-earth oxygen interaction in rare-earth implanted iron (1976)
Thome, L., Bernas, H., Chaumont, J., Abel, F., Bruneaux, M., Cohen, C.
Enhancement of the superconducting transition temperatures in ion-implanted aluminium alloys (1976)
Lamoise, A.M., Chaumont, J., Lalu, F., Meunier, F., Bernas, H.
Random alloys of C, Si, and Ge with Al, prepared by ion implantation at liquid helium temperatures, have maximum superconducting transition temperatures Tc of 4.2 K (C), 7.35 K (Ge) and 8.35 K (Si)....
Enhancement of the superconducting transition temperatures in ion-implanted aluminium alloys (1976)
Lamoise, A.M., Chaumont, J., Lalu, F., Meunier, F., Bernas, H.
Random alloys of C, Si, and Ge with Al, prepared by ion implantation at liquid helium temperatures, have maximum superconducting transition temperatures Tc of 4.2 K (C), 7.35 K (Ge) and 8.35 K (Si)....
Enhancement of the superconducting transition temperatures in ion-implanted aluminium alloys (1976)
Lamoise, A.M., Chaumont, J., Lalu, F., Meunier, F., Bernas, H.
Random alloys of C, Si, and Ge with Al, prepared by ion implantation at liquid helium temperatures, have maximum superconducting transition temperatures Tc of 4.2 K (C), 7.35 K (Ge) and 8.35 K (Si)....
Lamoise, A.M., Chaumont, J., Meunier, F., Bernas, H.
We present the first resistivity annealing curves of Al after implantation of Al-, H-, and O-ions at liquid helium temperatures. The Al-implantation produces a curve resembling that of...
Lamoise, A.M., Chaumont, J., Meunier, F., Bernas, H.
Using a recent modification of the Orsay ion implantor, Al, O, He, H and D were implanted into Al thin films at temperatures below 6 K. The critical temperature Tc of the implanted films depends on...
Lamoise, A.M., Chaumont, J., Meunier, F., Bernas, H.
We present the first resistivity annealing curves of Al after implantation of Al-, H-, and O-ions at liquid helium temperatures. The Al-implantation produces a curve resembling that of...
Lamoise, A.M., Chaumont, J., Meunier, F., Bernas, H.
Using a recent modification of the Orsay ion implantor, Al, O, He, H and D were implanted into Al thin films at temperatures below 6 K. The critical temperature Tc of the implanted films depends on...
Lamoise, A.M., Chaumont, J., Meunier, F., Bernas, H.
We present the first resistivity annealing curves of Al after implantation of Al-, H-, and O-ions at liquid helium temperatures. The Al-implantation produces a curve resembling that of...
Lamoise, A.M., Chaumont, J., Meunier, F., Bernas, H.
Using a recent modification of the Orsay ion implantor, Al, O, He, H and D were implanted into Al thin films at temperatures below 6 K. The critical temperature Tc of the implanted films depends on...
Lamoise, A.M., Chaumont, J., Meunier, F., Bernas, H.
We present the first resistivity annealing curves of Al after implantation of Al-, H-, and O-ions at liquid helium temperatures. The Al-implantation produces a curve resembling that of...
Lamoise, A.M., Chaumont, J., Meunier, F., Bernas, H.
Using a recent modification of the Orsay ion implantor, Al, O, He, H and D were implanted into Al thin films at temperatures below 6 K. The critical temperature Tc of the implanted films depends on...
Ion implantation and hyperfine interactions in metals (1974)
A very simplified description of angular distribution hyperfine interaction techniques is given, with a view to presenting their applications in ion-implantation studies of metals. Some typical...
Ion implantation and hyperfine interactions in metals (1974)
A very simplified description of angular distribution hyperfine interaction techniques is given, with a view to presenting their applications in ion-implantation studies of metals. Some typical...
Ion implantation and hyperfine interactions in metals (1974)
A very simplified description of angular distribution hyperfine interaction techniques is given, with a view to presenting their applications in ion-implantation studies of metals. Some typical...
ÉTUDE EN MICROSCOPIE ÉLECTRONIQUE DE DÉFAUTS CRÉÉS DANS LES MÉTAUX PAR IMPLANTATION IONIQUE (1973)
Ruault, M., Jouffrey, B., Chaumont, J., Bernas, H.
L'étude des défauts d'irradiation aux ions (créés essentiellement dans des cibles d'or) a été menée à l'aide de la microscopie électronique par transmission. Les courbes de distribution en...
Abel, F., Bruneaux, M., Cohen, C., Bernas, H., Chaumont, J., Thome, L.
Les propriétés de recuit jusqu'à 600 °C de Yb implanté dans le fer ont été étudiées par canalisation. Les résultats sont comparés à des mesures de champ hyperfin. Le rendement de...
ÉTUDE EN MICROSCOPIE ÉLECTRONIQUE DE DÉFAUTS CRÉÉS DANS LES MÉTAUX PAR IMPLANTATION IONIQUE (1973)
Ruault, M., Jouffrey, B., Chaumont, J., Bernas, H.
L'étude des défauts d'irradiation aux ions (créés essentiellement dans des cibles d'or) a été menée à l'aide de la microscopie électronique par transmission. Les courbes de distribution en...
Abel, F., Bruneaux, M., Cohen, C., Bernas, H., Chaumont, J., Thome, L.
Les propriétés de recuit jusqu'à 600 °C de Yb implanté dans le fer ont été étudiées par canalisation. Les résultats sont comparés à des mesures de champ hyperfin. Le rendement de...
ÉTUDE EN MICROSCOPIE ÉLECTRONIQUE DE DÉFAUTS CRÉÉS DANS LES MÉTAUX PAR IMPLANTATION IONIQUE (1973)
Ruault, M., Jouffrey, B., Chaumont, J., Bernas, H.
L'étude des défauts d'irradiation aux ions (créés essentiellement dans des cibles d'or) a été menée à l'aide de la microscopie électronique par transmission. Les courbes de distribution en...
Abel, F., Bruneaux, M., Cohen, C., Bernas, H., Chaumont, J., Thome, L.
Les propriétés de recuit jusqu'à 600 °C de Yb implanté dans le fer ont été étudiées par canalisation. Les résultats sont comparés à des mesures de champ hyperfin. Le rendement de...
Étude de l'effet Mössbauer dans FeCl3, 6H2O cristallin et vitreux (1963)
Le spectre d'absorption résonnante de FeCl3, 6H2O cristallin présente deux maximums ne correspondant pas au déplacement isomérique attendu pour Fe+ + + . Par contre, le spectre du composé à...
Étude de l'effet Mössbauer dans FeCl3, 6H2O cristallin et vitreux (1963)
Le spectre d'absorption résonnante de FeCl3, 6H2O cristallin présente deux maximums ne correspondant pas au déplacement isomérique attendu pour Fe+ + + . Par contre, le spectre du composé à...
Étude de l'effet Mössbauer dans FeCl3, 6H2O cristallin et vitreux (1963)
Le spectre d'absorption résonnante de FeCl3, 6H2O cristallin présente deux maximums ne correspondant pas au déplacement isomérique attendu pour Fe+ + + . Par contre, le spectre du composé à...