Directed growth of horizontal silicon nanowires by laser induced decomposition of silane H., (2006)
Charrier, A., Dallaporta, H., Safarov, V., Jamgotchian, H., Tonneau, D.
11th International Conference on Solid Films and Surfaces (2003)
Aufray, B, Bernardini, J, Dallaporta, H, Le Lay, G, Soukiassian, P
Nanostructures by CVD assisted methods using mineral precursors (2000)
Doppelt, P., Even, R., Marchi, F., Bouchiat, V., Dallaporta, H., Safarov, S., ...
Silicon Dioxide Defects Induced by Metal Impurities, (1998)
Dallaporta, H., Liehr, M., Lewis, J. E.
With higher levels of device integration and complexity an ever increasing number of processing steps is needed in very-large-scale integration materials processing. Imperfect processing conditions...
Growth Kinetics of Copper Films from Photoassisted CVD of Copperacetylacetonate (1995)
Tonneau, D., Pierrisnard, R., Dallaporta, H., Marine, W.
Copper thin films have been deposited by thermal decomposition of copper acetylacetonateoxygen mixtures. Copper films of high quality as observed by Auger Electron Spectroscopy (AES) have been...
Growth Kinetics of Copper Films from Photoassisted CVD of Copperacetylacetonate (1995)
Tonneau, D., Pierrisnard, R., Dallaporta, H., Marine, W.
Copper thin films have been deposited by thermal decomposition of copper acetylacetonateoxygen mixtures. Copper films of high quality as observed by Auger Electron Spectroscopy (AES) have been...
Growth Kinetics of Copper Films from Photoassisted CVD of Copperacetylacetonate (1995)
Tonneau, D., Pierrisnard, R., Dallaporta, H., Marine, W.
Copper thin films have been deposited by thermal decomposition of copper acetylacetonateoxygen mixtures. Copper films of high quality as observed by Auger Electron Spectroscopy (AES) have been...
Formation of CVD copper films investigated by surface analysis and reflectivity (1993)
Hammadi, Z., Lecohier, B., Cros, A., Dallaporta, H.
In this contribution we investigate the formation of copper films by chemical vapor deposition on silicon using the copper (II) bis(acetylacetonate) precursor. From Auger spectroscopy and ion...
Formation of CVD copper films investigated by surface analysis and reflectivity (1993)
Hammadi, Z., Lecohier, B., Cros, A., Dallaporta, H.
In this contribution we investigate the formation of copper films by chemical vapor deposition on silicon using the copper (II) bis(acetylacetonate) precursor. From Auger spectroscopy and ion...
Formation of CVD copper films investigated by surface analysis and reflectivity (1993)
Hammadi, Z., Lecohier, B., Cros, A., Dallaporta, H.
In this contribution we investigate the formation of copper films by chemical vapor deposition on silicon using the copper (II) bis(acetylacetonate) precursor. From Auger spectroscopy and ion...
CHEMICAL VAPOR DEPOSITION OF COPPER FOR MICROELECTRONIC DEVICES BASED ON SILICON (1991)
Dallaporta, H., Hammadi, Z., Pierrisnard, R., Cros, A.
In this paper we present a study of copper CVD deposition on different types of substrates used for microelectronic devices. The influence of substrate temperature, pressure, flux and contamination...
CHEMICAL VAPOR DEPOSITION OF COPPER FOR MICROELECTRONIC DEVICES BASED ON SILICON (1991)
Dallaporta, H., Hammadi, Z., Pierrisnard, R., Cros, A.
In this paper we present a study of copper CVD deposition on different types of substrates used for microelectronic devices. The influence of substrate temperature, pressure, flux and contamination...
CHEMICAL VAPOR DEPOSITION OF COPPER FOR MICROELECTRONIC DEVICES BASED ON SILICON (1991)
Dallaporta, H., Hammadi, Z., Pierrisnard, R., Cros, A.
In this paper we present a study of copper CVD deposition on different types of substrates used for microelectronic devices. The influence of substrate temperature, pressure, flux and contamination...
Interband contribution to transition radiation from metals (1982)
Dallaporta, H., Humbert, A., Debever, J.M., Hanus, J.
Emission spectra from aluminium and copper targets excited by fast electrons have been measured. The ratio of these two measurements can be directly compared with theoretical transition radiation...
Interband contribution to transition radiation from metals (1982)
Dallaporta, H., Humbert, A., Debever, J.M., Hanus, J.
Emission spectra from aluminium and copper targets excited by fast electrons have been measured. The ratio of these two measurements can be directly compared with theoretical transition radiation...
Interband contribution to transition radiation from metals (1982)
Dallaporta, H., Humbert, A., Debever, J.M., Hanus, J.
Emission spectra from aluminium and copper targets excited by fast electrons have been measured. The ratio of these two measurements can be directly compared with theoretical transition radiation...
Observation of surface plasmons by transition radiation from smooth aluminium films (1981)
Humbert, A., Debever, J.M., Dallaporta, H., Hanus, J.
We report the first observation of a strong resonance due to surface plasmons in the transition radiation emitted by films of aluminium deposited on quartz prisms and bombarded with 20 keV electrons....
Observation of surface plasmons by transition radiation from smooth aluminium films (1981)
Humbert, A., Debever, J.M., Dallaporta, H., Hanus, J.
We report the first observation of a strong resonance due to surface plasmons in the transition radiation emitted by films of aluminium deposited on quartz prisms and bombarded with 20 keV electrons....
Observation of surface plasmons by transition radiation from smooth aluminium films (1981)
Humbert, A., Debever, J.M., Dallaporta, H., Hanus, J.
We report the first observation of a strong resonance due to surface plasmons in the transition radiation emitted by films of aluminium deposited on quartz prisms and bombarded with 20 keV electrons....
Thermoreflectance of tungsten from 0.3 to 4.5 eV (1976)
Dallaporta, H., Debever, J.M., Hanus, J.
The thermoreflectance spectrum of tungsten is reported for the energy range of 0.3 to 4.5 eV. The observed structures are interpreted in terms of transitions in qualitative agreement with the...
Thermoreflectance of tungsten from 0.3 to 4.5 eV (1976)
Dallaporta, H., Debever, J.M., Hanus, J.
The thermoreflectance spectrum of tungsten is reported for the energy range of 0.3 to 4.5 eV. The observed structures are interpreted in terms of transitions in qualitative agreement with the...
Thermoreflectance of tungsten from 0.3 to 4.5 eV (1976)
Dallaporta, H., Debever, J.M., Hanus, J.
The thermoreflectance spectrum of tungsten is reported for the energy range of 0.3 to 4.5 eV. The observed structures are interpreted in terms of transitions in qualitative agreement with the...