Kapche Tagne, F, Le Louan, A, Happy, H, Dambrine, G
Dans cet article, les auteurs présentent un schéma équivalent petit signal d'un transistor à effet de champ à base de nano tube de carbone (CNTFETs). Les éléments du schéma équivalent sont...
Wolf, G., Demichel, S., Leblanc, R., Blache, F., Lefèvre, R., Dambrine, G., ...
An eight stage distributed amplifier with 12.5 dB ± 0.45 dB gain and 50 GHz bandwidth has been demonstrated in a commercially available 0.1 µm metamorphic GaAs HEMT (MHEMT) technology. The...
HEMT's Design for Applications beyond 100GHz (2002)
Bollaert, S., Parenty, T., Wallart, X., Happy, H., Dambrine, G., Cappy, A.
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0.1um metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMTs on GaAs substrate (1998)
Bollaert, S., Cordier, Y., Happy, H., Zaknoune, M., Lepilliet, S., Cappy, A.
We report on the fabrication and characterization of 0.1 urn T-gate metamorphic InAlAs/InGaAs HEMTs on GaAs substrate with InAs mole fraction of 0.4. These devices present a good Schottky diode...
Happy, H., Bollaert, S., Foure, H., Cappy, A.
A theoretical analysis is made of Metamorphic HEMT structures (MM-HEMT) versus LnAs molefraction. The material properties are analysed, as are the modeling of dc, ac, noise and high frequency...