Local Density of States in Mesoscopic Samples from Scanning Gate Microscopy (2007)
Pala, M. G., Hackens, B., Martins, F., Sellier, H., Bayot, V., Huant, S., ...
We study the relationship between the local density of states (LDOS) and the conductance variation $\Delta G$ in scanning-gate-microscopy experiments on mesoscopic structures as a charged tip scans...
Imaging Electron Wave Functions Inside Open Quantum Rings (2007)
Martins, F., Hackens, B., Pala, M. G., Ouisse, T., Sellier, H., Wallart, X., ...
Combining Scanning Gate Microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of electron probability density $|\Psi|^{2}(x,y)$ in embedded mesoscopic quantum rings...
Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors (2007)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a...
Transport spectroscopy of a single dopant in a gated silicon nanowire (2007)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant...
Imaging and controlling electron transport inside a quantum ring (2006)
Hackens, B., Martins, F., Ouisse, T., Sellier, H., Bollaert, S., Wallart, X., ...
Traditionally, the understanding of quantum transport, coherent and ballistic1, relies on the measurement of macroscopic properties such as the conductance. While powerful when coupled to statistical...
Transport spectroscopy of a single dopant in a gated silicon nanowire (2006)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant...
Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors (2006)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a...
Cretinon, L., Gupta, A. K., Sellier, H., Lefloch, F., Faure, M., Buzdin, A., ...
We studied the proximity effect between a superconductor (Nb) and a diluted ferromagnetic alloy (CuNi) in a bilayer geometry. We measured the local density of states on top of the ferromagnetic...
Half-integer Shapiro steps at the 0-pi crossover of a ferromagnetic Josephson junction (2004)
Sellier, H., Baraduc, C., Lefloch, F., Calemczuk, R.
We investigate the current-phase relation of S/F/S junctions near the crossover between the 0 and the pi ground states. We use Nb/CuNi/Nb junctions where this crossover is driven both by thickness...
Inhomogeneous superconductivity induced in a weak ferromagnet (2001)
Rusanov, A., Boogaard, R., Hesselberth, M., Sellier, H., Aarts, J.
Under certain conditions, the order parameter induced by a superconductor (S) in a ferromagnet (F) can be inhomogeneous and oscillating, which results e.g. in the so-called pi-coupling in S/F/S...