Low-Frequency Noise Phenomena in Switched MOSFETs (2007)
Wel Van Der, Arnoud P., Klumperink, Eric A.M., Kolhatkar, Jay S., Hoekstra, Eric, Snoeij, Martijn F., Salm, Cora, ...
n small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects. In this paper, the authors review the...
Kolhatkar, Jay, Hoekstra, Eric, Hof, André, Salm, Cora, Schmitz, Jurriaan, Wallinga, Hans
This letter reports the diagnostic power of the low-frequency noise analysis (steady-state and periodic large-signal excitation) in MOSFETs subjected to hot-carrier degradation. The LF noise under...
Reduction of 1/f Noise by Switched Biasing: an Overview (2005)
Klumperink, Eric, Wel Van Der, Arnoud, Kolhatkar, Jay, Hoekstra, Eric, Salm, Cora, Wallinga, Hans, ...
MOSFETs are notorious for having strong low frequency noise (1/f noise or flicker noise). In the late 90's we discovered that this noise can be reduced if you periodically switch the bias on and off....
Breakdown and recovery of thin gate oxides (2000)
Bearda, Twan, Mertens, Paul W., Heyns, Marc M., Woerlee, Pierre, Wallinga, Hans
Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress...
Breakdown and Recovery of Thin Gate Oxides (2000)
Bearda, Twan, Mertens, Paul W., Heyns, Marc M., Wallinga, Hans, Woerlee, Pierre
Breakdown events are studied in varying test set-ups with a high time resolution. Often a partial recovery from breakdown is observed within a few ms. Parameters such as device area, stress...
Deposited Inter-Polysilicon Dielectrics for Nonvolatile Memories (1999)
Klootwijk, Johan H., Kranenburg Van, Herma, Woerlee, Pierre H., Wallinga, Hans
Deposited instead of thermally grown oxides were studied to form very high-quality inter-polysilicon dielectric layers for embedded nonvolatile memory application. It was found that by optimizing the...
Sanduleanu, M.A.T., Wassenaar, R.F., Wallinga, Hans
Due to components nonidealities, the analog reconstruction is the most difficult analog building block in a D/A converter. The paper presents a 16-bit D/A interface with a current driven semidigital...
Improved device performance by multistep or carbon co-implants (1994)
Liefting, Reinoud, Wijburg, Rutger C., Custer, Jonathan S., Wallinga, Hans, Saris, Frans W.
High-energy ion implantation is used for forming the collector in vertical bipolar transistors in a BiCMOS process. Secondary defects, remaining after annealing the implant damage, give rise to an...
A high-speed analog neural processor (1994)
Masa, Peter, Hoen, Klaas, Wallinga, Hans
Targeted at high-energy physics research applications, our special-purpose analog neural processor can classify up to 70 dimensional vectors within 50 nanoseconds. The decision-making process of the...
Learning behavior and temporary minima of two-layer neural networks (1994)
Annema, Anne-Johan, Hoen, Klaas, Wallinga, Hans
This paper presents a mathematical analysis of the occurrence of temporary minima during training of a single-output, two-layer neural network, with learning according to the back-propagation...
A Nonvolatile Analog Programmable Voltage Source Using the VIPMOS EEPROM Structure (1993)
Steenwijk Van, Gijs, Hoen, Klaas, Wallinga, Hans
A programmable voltage source using the vertical injection punchthrough based MOS (VIPMOS) EEPROM structure is presented. The circuit operates at a single 5-V supply and the output voltage is...
VIPMOS-A novel buried injector structure for EPROM applications (1991)
Wijburg, Rutger C., Hemink, Gertjan J., Middelhoek, Jan, Wallinga, Hans, Mouthaan, Ton J.
A buried injector is proposed as a source of electrons for substrate hot electrons injection. To enhance the compatibility with VLSI processing, the buried injector is formed by the local overlap of...
A graphical representation of a simple MOST (metal-oxide-semiconductor transistor) model for the analysis of analog MOS circuits operating in strong inversion is given. It visualizes the principles...
A CMOS analog continuous-time delay line with adaptive delay-time control (1988)
A CMOS analog continuous-time delay line composed of cascaded first-order current-domain all-pass sections is discussed. Each all-pass section consists of CMOS transistors and a single capacitor. The...
The small-signal charge transfer inefficiency (SCTI) of a surface-channel CCD has been studied. The experimentally observed behavior of the SCTI could not be explained by the conventional interface...
Bhattacharyya, A.B., Wallinga, Hans
A new three-terminal MOS varicap is proposed where the terminal capacitors are made voltage variable not by the modulation of depletion width but by changing the area of inversion under the gate. An...
A CMOS Four-Quadrant Analog Multiplier (1979)
A new circuit configuration for an MOS four-quadrant analog multiplier circuit is presented. It is based on the square-law characteristics of the MOS transistor. Two versions have been realized. The...
The examined class of circuits includes voltage multipliers, current multipliers, linear V-I convertors, linear I-V convertors, current squaring circuits, and current divider circuits. Typical for...
An Electrically Programmable Split-Electrode Charge-Coupled Transversal Filter (EPSEF) (1979)
Wallinga, Hans, Pelgrom, Marcel J.M.
A CCD split-electrode transversal filter (EPSEF) with analog controlled tap weights is described. The programmable tap weighting utilizes a novel analog multiplier for sampled data, based on charge...
An electrically programmable CCD transversal filter with variable capacitance weight factors (1979)
A prototype of a CCD programmable transversal filter is described. The tap weights have been implemented by on-chip voltage-controlled variable MOS capacitors. The summation of the weighted tap...
A general model for the frequency response of multiphase charge transfer delay lines (1979)
A general model for the transfer function of a multiphase CTD delay line is presented in the z-domain. It covers the widely used single-phase transfer function. The new model has been applied for...
Diagnostic analysis of the charge transfer in CCDs (1974)
A small signal low-frequency measurement method to analyze the charge transfer mechanism in CCDs, occurring within time intervals between 1 ns and 1¿s, using trapezoidal clock waveforms at...