Sharifi, Hasan, Lahiji, Rosa R, Lin, Han-Chung, Ye, P. D., Katehi, Linda P.B., Mohammadi, Saeed
Investigation of Parylene-N (Pa-N) as a flexible substrate, multilayer dielectric material, and passivation layer for microwave and millimeter-wave integrated circuits is presented. For the first...
Sharifi, Hasan, Mohammadi, Saeed
A modification to a recently developed chip/wafer integration technology has proven to be very effective in suppressing the substrate crosstalk for mixed signal systems. In this implementation,...
Lin, H C, Yang, T, Sharifi, Hasan, Kim, S K, Xuan, Y, Shen, T, ...
Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with ex situ atomic-layer-deposited Al2O3 as gate dielectrics are studied. Maximum drain currents of 211...
3-D integration of 10-GHz filter and CMOS receiver front-end (2007)
Choi, Tae-young, Sharifi, Hasan, Sigmarsson, Hjalti, Chappell, William J., Mohammadi, Saeed, Katehi, Linda
A 10-GHz filter/receiver module is implemented in a novel 3-D integration technique suitable for RF and microwave circuits. The receiver designed and fabricated in a commercial 0.18-mu m CMOS process...
The trend for future microelectronics is towards low cost, high performance and multi-functional integrated systems. This research presents a solution to substantially reduce the cost of integrated...