Single Carbon Nanotube Transistor at GHz Frequency (2008)
Chaste, Julien, Lechner, Lorenz, Morfin, Pascal, Feve, Gwendal, Kontos, Takis, Berroir, Jean-Marc, ...
We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1-1.6 GHz range, we deduce device transconductance gm and gate-nanotube...
Single Carbon Nanotube Transistor at GHz Frequency (2008)
Chaste, Julien, Lechner, Lorentz, Morfin, Pascal, Fève, Gwendal, Kontos, Takis, Berroir, Jean-Marc, ...
We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1-1.6 GHz range, we deduce device transconductance gm and gate-nanotube...
Single Carbon Nanotube Transistor at GHz Frequency (2008)
Chaste, Julien, Lechner, Lorentz, Morfin, Pascal, Fève, Gwendal, Kontos, Takis, Berroir, Jean-Marc, ...
We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1-1.6 GHz range, we deduce device transconductance gm and gate-nanotube...
An overview of low noise devices and associated circuits for 100-200 GHz space applications (2003)
Dambrine, G., Parenty, Thierry, Bollaert, S., Happy, Henri, Cappy, A., Mateos, Javier, ...
This paper relates the state of the art of the HEMT low noise technologies for the space applications at millimeter wave and specially for the earth observation in the G-band (140 – 220 GHz)).The...
94-GHz low noise amplifier on InP in coplanar technology (1999)
Hoel, Virginie, Boret, Samuel, Grimbert, Bertrand, Aperce, Gilles, Bollaert, S., Happy, Henri, ...
High performances have been achieved at W-band with a 2-stage 0.1 um gate-length InGaAs/InAlAs/InP LM-HEMT MMIC low noise amplifier in coplanar technology. To obtain the T-gate profile, we use...