Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures (2007)
Paladugu, M, Zou, J, Guo, Y.N., Auchterlonie, G.J., Joyce, HJ, Gao, Q, ...
Evolution of InAs branches in InAs/GaAs nanowire heterostructures (2007)
Paladugu, M., Zou, J., Auchterlonie, G. J., Guo, Y.N., Kim, Y, Joyce, HJ, ...
Branched nanowire heterostructures of InAs/GaAs were observed during Au-assisted growth of InAs on GaAs nanowires. The evolution of these branches has been determined through detailed electron...
Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires (2006)
Kim, Y, Joyce, HJ, Gao, O, Tan, HH, Jagadish, C, Paladugu, M, ...
We have synthesized ternary InGaAs nanowires on (111)B GaAs surfaces by metal-organic chemical vapor deposition. Au colloidal nanoparticles were employed to catalyze nanowire growth. We observed the...
Guo, YN, Zou, J, Paladugu, M, Wang, H, Gao, Q, Tan, HH, ...
Highly lattice mismatched (7.8%) GaAs/GaSb nanowire heterostructures were grown by metal-organic chemical vapor deposition and their detailed structural characteristics were determined by electron...
Thermal stability of ion-implanted ZnO (2005)
Coleman, VA, Tan, HH, Jagadish, C, Kucheyev, SO, Zou, J
Zinc oxide single crystals implanted at room temperature with high-dose (1.4x10(17) cm(-2)) 300 keV As+ ions are annealed at 1000-1200 degrees C. Damage recovery is studied by a combination of...
Structural, electrical, and optical analysis of ion implanted semi-insulating InP (2004)
Carmody, C, Tan, HH, Jagadish, C, Douheret, O, Maknys, K, Anand, S, ...
Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray...
Gao, Q, Tan, HH, Jagadish, C, Sun, BQ, Gal, M, Ouyang, L, ...
In this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found...
Gao, Q, Tan, HH, Jagadish, C, Sun, BQ, Gal, M, Ouyang, L, ...
Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well (QW) structures grown by metalorganic chemical vapor deposition were investigated using...
Polarization based integration scheme (POLIS) for active and passive components (2003)
Khalique, U, Zhu, YC, Tol, JJGM Van Der, Groen, FH, Karouta, F, Geluk, EJ, ...
Epitaxially grown GaAsN random laser (2003)
Sun, BQ, Gal, M, Gao, Q, Tan, HH, Jagadish, C, Puzzer, T, ...
We have studied the photoluminescence properties of as-grown GaAs1-xNx epitaxial layers grown on GaAs containing 0.6%, 1.77%, and 2.8% nitrogen. We found laser emission from thick (d>200 nm)...
Liu, XQ, Lu, W, Shen, SC, Tan, HH, Jagadish, C, Zou, J
A pseudomorphic Al0.5Ga0.5As/ln(0.25)Ga(0.75)As/GaAs asymmetric quantum wire (QWR) structure was grown on GaAs V-grooved substrate by low pressure metal organic vapor phase epitaxy. The formation of...
Fu, Y, Willander, M, Liu, XQ, Lu, W, Shen, SC, Tan, HH, ...
Photoconductors based on V-grooved Al0.5Ga0.5As/GaAs multiple quantum wires (QWR) were fabricated. The geometric structure of the QWR was carefully characterized by transmission electron microscopy...
Carrier transfer between V-grooved quantum wire and vertical quantum well (2001)
Lu, W, Liu, XQ, Li, ZF, Shen, SC, Zhao, QX, Fu, Y, ...
We report the temperature dependence of the photoluminescence from our V-grooved GaAs/AlGaAs quantum wires. Based on the specially resolved luminescence results, our results show that in the...
Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells (1998)
Yuan, S, Kim, Y, Tan, HH, Jagadish, C, Burke, PT, Dao, LV, ...
Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photoluminescence, transmission electron microscopy, and quantum well modeling were used to understand the...
Annealing of ion implanted gallium nitride (1998)
Tan, HH, Williams, JS, Zou, J, Cockayne, DJH, Pearton, SJ, Zolper, JC, ...
In this paper, we examine Si and Te ion implant damage removal in GaN as a function of implantation dose, and implantation and annealing temperature. Transmission electron microscopy shows that...
Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells (1998)
Yuan, S, Kim, Y, Tan, HH, Jagadish, C, Burke, PT, Dao, LV, ...
Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photoluminescence, transmission electron microscopy, and quantum well modeling were used to understand the...
Anodic-oxide-induced intermixing in GaAs-AlGaAs quantum-well and quantum-wire structures (1998)
Yuan, S, Jagadish, C, Kim, Y, Chang, Y, Tan, HH, Cohen, RM, ...
Anodic oxides of GaAs were shown to enhance the intermixing in GaAs-AlGaAs quantum wells (QW) during rapid thermal processing. Proximity of the anodic oxide to the QW has been shown to influence the...
Anodic-oxide-induced interdiffusion in quantum wells structure (1998)
Chan, CY, Li, EH, Shu, Y, Tan, HH, Jagadish, C
Enhancement of interdiffusion in GaAs/AlGaAs quantum wells (QWs) due to anodic oxides was studied. Photoluminescence and diffused QW modeling were used to understand the effects of intermixing on the...
Annealing of ion implanted gallium nitride
Tan, HH, Williams, JS, Zou, J, Cockayne, DJH, Pearton, SJ, Zolper, JC, ...
In this paper, we examine Si and Te ion implant damage removal in GaN as a function of implantation dose, and implantation and annealing temperature. Transmission electron microscopy shows that...