Hiroshi Mizuta

Multi-scale simulation of hybrid silicon nano-electromechanical (NEM) information devices (2009)

Mizuta, Hiroshi, Ramirez, M. A. G, Hassani, F. A, Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, Nagami, T, ...

Functional silicon nanoelectronic devices co-integrated with nanoelectromechanical structures (2009)

Mizuta, Hiroshi, Tsuchiya, Yoshishige, Oda, S

Quasi-ballistic electron transport through silicon nanocrystals (2009)

Mori, N, Minari, H, Uno, S, Mizuta, Hiroshi, Koshida, N

NEM – MOS Co-integration for Fast & Nonvolatile Memory Applications (Invited Talk) (2009)

Mizuta, Hiroshi, Ramirez, M. A. G, Tsuchiya, Yoshishige, Nagami, T, Uchida, K, Oda, S

NEM-MOS Co-integration for Fast & Nonvolatile Memory Applications (2009)

Mizuta, Hiroshi, Garcia Ramirez, Mario, Tsuchiya, Yoshishige, Nagami, T, Uchida, K, Oda, S

Multi-scale simulation of hybrid silicon nano-electromechanical (NEM) information devices (2009)

Mizuta, Hiroshi, Garcia Ramirez, Mario, Arab Hassani, Faezeh, Ghiass, Mohammad Adel, Tsuchiya, Yoshishige, ...

Study of single-electron transport via suspended double silicon quantum dots (2009)

Ogi, J, Ferrus, T, Tsuchiya, Yoshishige, Uchida, K, Williams, D, Oda, S, ...

Lateral conduction of Si nanocrystals by thin film transistor structures (2009)

Zhou, X, Uchida, K, Mizuta, Hiroshi, Oda, S

Current oscillations observed for sparse Si nanocrystal thin films (2009)

Zhou, X, Uchida, K, Mizuta, Hiroshi, Oda, S

Engineering of heterostructured tunnel barrier for non-volatile memory applications: potential of Pr-based heterostructured barrier as a tunneling oxide (2009)

Kurihara, T, Nagahama, Y, Kobayashi, D, Niikura, H, Tsuchiya, Yoshishige, Mizuta, Hiroshi, ...

Electron transport through silicon serial triple quantum dots (2009)

Yamahata, G, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Uchida, K, Oda, S

Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate (2009)

Li, C, Usami, K, Yamahata, G, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S

Design optimization of NEMS switches for suspended-gate single-electron transistor applications (2009)

Pruvost, Benjamin, Uchida, Ken, Mizuta, Hiroshi, Oda, Shunri

Spontaneous emission control of silicon nanocrystals by silicon three-dimensional photonic crystal structure fabricated by self-aligned two-directional electrochemical etching method (2009)

Hippo, D, Urakawa, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N, Oda, S

Design of New Logic Architectures Utilizing Optimized Suspended-Gate Single-Electron Transistors (2009)

Pruvost, B, Uchida, K, Mizuta, Hiroshi, Oda, S

Vapor-solid-solid radial growth of Ge nanowires (2009)

Li, C, Usami, K, Mizuta, Hiroshi, Oda, S

Control of Inter-dot Electrostatic Coupling in an Asymmetric Silicon Double Quantum Dot Operating at 4.5 K (2009)

Yamahata, G, Kodera, T, Mizuta, Hiroshi, Uchida, K, Oda, S

Multi-scale Simulation of Hybrid Silicon Nanoelectromechanical (NEM) Information Systems (2009)

Mizuta, Hiroshi, Garcia Ramirez, Mario, Tsuchiya, Yoshishige, Nagami, T, Sawai, S, Oda, S, ...

Quasi-ballistic Electron Transport through Silicon Nanocrystals (2009)

Mori, N, Minari, H, Uno, S, Mizuta, Hiroshi, Koshida, N

Electron transport in nanocrystalline silicon (2008)

Mizuta, Hiroshi, Oda, S, Uno, S, Mori, N, Koshida, N

Physics and Applications of Hybrid Silicon Nanoelectromechanical Devices (Plenary Talk) (2008)

Mizuta, Hiroshi, Tsuchiya, Yoshishige, Oda, S

Co-integration of Silicon Nanodevices and NEMS for Advanced Information Processing (Invited Talk) (2008)

Mizuta, Hiroshi, Nagami, T, Ogi, Jun, Pruvost, B, Ramirez, M.A.G, Yoshimura, Hideo, ...

Suspended Gate Silicon Nanodots memory (2008)

Garcia-Ramirez, Mario A., Yoshimura, Hideo, Tsuchiya, Yoshishige, Mizuta, Hiroshi

This paper proposes a new non-volatile semiconductor memory which features a suspended gate integrated with silicon nanocrystals dots as a floating gate and the MOSFET as a readout. Performing...

Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots (2008)

Yamahata, G, Uchida, K, Oda, S, Tsuchiya, Yoshishige, Mizuta, Hiroshi

Detection of Single-Charge Polarisation in Silicon Double Quantum Dots by Using Serially-Connected Multiple Single-Electron Transistors (2008)

Kawata, Y, Oda, S, Tsuchiya, Yoshishige, Mizuta, Hiroshi

Suspended gate silicon nanodot memory (2008)

Ramirez, M.A.G, Yoshimura, Hideo, Tsuchiya, Yoshishige, Mizuta, Hiroshi

Hybrid silicon nanotechnologies for ‘More-than-Moore’ and ‘Beyond-CMOS’ domains (Plenary Talk) (2008)

Mizuta, Hiroshi, Tsuchiya, Yoshishige, Oda, S

Phosphorous-doping in silicon nanocrystals (2008)

Inaba, N, Nakamine, Y, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Uchida, K, Pereira, R, ...

VLS growth of germanium nanowires on SiO2-terminanted Si (111) substrate (2008)

Li, C.B, Usami, K, Mizuta, Hiroshi, Uchida, K, Oda, S

Silicon radio frequency single-electron transistors operating at above 4.2 K (2008)

Manoharan, M, Tsuchiya, Yoshishige, Oda, S, Mizuta, Hiroshi

Silicon nanochains: fundamental properties and applications (2008)

Rafiq, M. A., Durrani, Z. A. K., Mizuta, Hiroshi, Colli, A., Servati, P., Ferrari, A.C., ...

The impacts of silicon substrate surface conditions on the VLS growth of germanium nanowires (2008)

Li, C. B., Usami, K., Mizuta, Hiroshi, Oda, S.

Size effects on hopping conduction in Si nanocrystals (2008)

Zhou, X., Usami, K., Rafiq, M.A., Mizuta, Hiroshi, Oda, S.

Size-Dependent Structural Characterization of Silicon Nanowires (2008)

Akhtar, S, Usami, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S

P-type Si nanocrystal thin-film transistors (2008)

Zhou , X., Rafiq, M. A., Mizuta, Hiroshi, Oda, S.

Switching properties of electromechanically-bistable and multistable bridges for nonvolatile memory applications (2008)

Tsuchiya, Yoshishige, Matsuda, S., Nagami, T., Saito, S., Arai, T., Shimada, T., ...

Atomistic study of phonon states in hydrogen-terminated Si ultra-thin films (2008)

Sawai, S., Uno, S., Okamoto, M., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Anomalous suppression of single-electron tunneling observed for Si nanobridge transistors with a suspended quantum dot cavity (2008)

Ogi, J., Manoharan, M., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Transient response analysis of programming/readout characteristics for NEMS memory (2008)

Nagami, T., Tsuchiya, Yoshishige, Matsuda, S., Saito, S., Arai, T., Shimada, T., ...

Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistor? (2008)

Manoharan, M., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Observation of quantum level spectrum for silicon double single-electron transistors (2008)

Kawata, Y., Yamaguchi, T., Ishibashi, K., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Electron transport through silicon multiple quantum dot array devices (2008)

Yamahata, G., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S.

Controlled Ge nanowire grouwth on patterned Au catalyst substrate (2008)

Li, C. G., Usami, K., Mizuta, Hiroshi, Oda, S.

Design optimization of NEMS switches for single-electron logic applications (2008)

Mechanism of One-Directional Nano Etching in Silicon Using Magnetic-Field-Assisted Anodization (2008)

Hippo, D., Urakawa, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N., Oda, S.

“Single electron transport simulations in silicon nanochains (2008)

Rafiq, M. A., Durrani, Z. A. K., Mizuta, Hiroshi, Oda, S.

Hybrid silicon nanotechnologies for advanced information processing (2008)

Observation of quantum level spectrum for silicon double single-electron transistors (2008)

Kawata, Y., Yamaguchi, T., Ishibashi, K., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Room temperature single electron charging in single silicon nanochains (2008)

Rafiq, M., Durrani, Z.A.K., Mizuta, Hiroshi, Colli, A., Servati, P., Ferrari, A.C., ...

Vapor–Liquid–Solid Growth of Small- and Uniform-Diameter Silicon Nanowires at Low Temperature from Si2H6 (2008)

Akhtar, S., Usami, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S.

Control of electrostatic coupling observed for silicon double quantum dot structures (2008)

Yamahata, G., Tsuchiya, Yoshishige, Oda, S., Durrani, Z.A.K., Mizuta, Hiroshi

Synthesis of assembled nanocrystalline Si dots film through the Langmuir-Blodgett technique (2008)

Tanaka, A., Tsuchiya, Yoshishige, Usami, K., Saito, S., Arai, T., Mizuta, Hiroshi, ...

Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge (2008)

Ogi, J., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation (2008)

Manoharan, M., Tsuchiya, Y., Oda, S., Mizuta, Hiroshi

Strongly-coupled multiple-dot characteristics in dual recess structured silicon channe (2008)

Manoharan, M., Kawata, Y., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Impact of key circuit parameters on signal-to-noise ratio characteristics for the radio-frequency single electron transistors (2008)

Manoharan, M., Pruvost, B., Mizuta, Hiroshi, Oda, S.

Fabrication of vertical nanopillar devices (2008)

Rafiq, M. A., Mizuta, Hiroshi, Uno, S., Durrani, Z.A.K.

Bottom-up approach to silicon nanoelectronics (Invited paper) (2008)

Theoretical study of nonequilibrium electron transport and charge distribution in a three-site quantum wire (2008)

Nonequilibrium transport properties for a three-site quantum wire model (2008)

Electron transport in nanocrystalline silicon (2008)

Mizuta, Hiroshi, Oda, S., Uno, S., Mori, N., Koshida, N.

The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate (2008)

Li, C.B., Usami, K., Muraki, T., Mizuta, Hiroshi, Oda, S.

Influence of nanocrystal size on the transport properties of Si nanocrystals (2008)

Zhou, X., Usami, K., Rafiq, M.A., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S.

Study of single-charge polarization on a pair of charge qubits integrated onto silicon double single-electron transistor readout (2008)

Kawata, Y., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Impact of channel constrictions on the formation of multiple tunnel junctions in heavily-doped silicon single electron transistors (2008)

Manoharan, M, Oda, S, Mizuta, Hiroshi

Formation Mechanism of 100 nm-Scale Periodic-Structures in Silicon Using Magnetic-Field-Assisted Anodization (2008)

Hippo, D, Urakawa, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N, Oda, S

Visible Electroluminescence from Spherical-shaped Silicon Nanocrystals (2008)

Cheong, H.J, Tanaka, A, Hippo, D, Usami, K, Tsuchiya, Yoshishige, Mizuta, Hiroshi, ...

Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate energy states (2008)

Pruvost, B, Mizuta, Hiroshi, Oda, S

SOI-based radio-frequency single-electron transistors operating at temperatures above 4.2 K (2008)

Manoharan, M, Tsuchiya, Yoshishige, Oda, S, Mizuta, Hiroshi

Co integration of Silicon Nanodevices and NEMS for Advanced Information Processing (2008)

Mizuta, Hiroshi, Nagami, Tasuku, Ogi, Jun, Pruvost, Benjamin, Garcia Ramirez, Mario, Yoshimura, Hideo, ...

In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM)structures into conventional silicon nanodevices....

Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge (2007)

Ogi, J., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Control of electrostatic coupling observed for Si double quantum dot structures (2007)

Yamahata, G., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Study of Single-Charge Polarization on two Charge Qubits Integrated onto a Double Single-Electron Transistor Readout (2007)

Kawata, Y., Nishimoto, S., Tsuchiya, Yoshishige, Oda, S., Mizuta, Hiroshi

Frontier Process Workshop 2007 (2007)

Functional silicon nanoelectromechanical information processing devices (2007)

Nonequilibrium Transport Properties for a Three-site Quantum wire Model (2007)

Observation of strongly-coupled multiple-dot characteristics in the dual recess structured silicon channel with different oxidation conditions (2007)

Manoharan, M., Kawata, Y., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S.

DFT Simulation of Dynamic Charge States in Double Silicon Quantum Dots (2007)

Higashijima, S., Sawai, S., Tsuchiya, Yoshishige, Okamoto, M., Mizuta, Hiroshi, Oda, S.

High-speed and Non-volatile Memory Devices Using a Macroscopic Polarized Stack Consisting of Double Floating Gates Interconnected with Engineered Tunnel Oxide Barriers (2007)

Tsuchiya, Yoshishige, Kurihara, T., Saito, D., Niikura, H., Mizuta, Hiroshi, Oda, S.

Fabrication and Characterization of Double Single-Electron Transistors as a Readout for Charge Qubits (2007)

Kawata, Y., Manoharan, M., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S.

Voltage-Limitation-Free Compact SET Model Incorporating the Effects of Spin-Degenerate Discrete Energy States (2007)

Theory of Nonequilibrium Transport Properties for a Three-site Quantum Wire (2007)

Ab-initio simulation of phonon properties of ultra-thin silicon films (2007)

Sawai, S., Mizuta, Hiroshi, Higashijima, S., Uno, S., Okamoto, M., Tsuchiya, Yoshishige, ...

Three-Dimensional Numerical Analysis of Switching Properties of High-Speed and Nonvolatile Nanotlectromechanical Memory (2007)

Nagami, Tasuku, Mizuta, Hiroshi, Momo, Nobuyuki, Tsuchiya, Yoshishige, Saito, Shin-ichi, Arai, Tadashi, ...

Static and dynamic mechanical properties of the movable floating gate are investigated for a newly proposed high speed and non volatile nanoelectromechanical memory, which features a buckled floating...

Three-Dimensional Numerical Analysis of Switching Properties of High-Speed and Nonvolatile Nanotlectromechanical Memory (2007)

Nagami, Tasuku, Mizuta, Hiroshi, Momo, Nobuyuki, Tsuchiya, Yoshishige, Saito, Shin-ichi, Arai, Tadashi, ...

Static and dynamic mechanical properties of the movable floating gate are investigated for a newly proposed high speed and non volatile nanoelectromechanical memory, which features a buckled floating...

Light emission from size reduced nanocrystal silicon quantum dots (2007)

Tanaka, A., Hippo, D., Usami, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi, ...

Study of silicon nanodot formation in pulsed-gas VHF plasma process (2007)

Tsuchiya, Yoshishige, Ikezawa, K., Nakatsukasa, T., Inaba, N., Usami, K., Mizuta, Hiroshi, ...

Nanocrystalline Si dot assembly based on the Langmuir-Blodgett method (2007)

Tanaka, A., Tsuchiya, Yoshishige, Usami, K., Saito, S., Arai, T., Mizuta, Hiroshi, ...

Physics and applications of Si-based nanoelectromechanical information devices (Plenary Talk) (2007)

Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nanoelectromechanical memory (2007)

Nagami, T., Mizuta, Hiroshi, Momo, N., Tsuchiya, Yoshishige, Saito, S., Arai, T., ...

3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs (2007)

New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures (2007)

Hippo, D., Urakawa, K., Kawata, Y., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Koshida, N., ...

Charge Storage and Electron/Light Emission Properties of Silicon Nanocrystals (2007)

Oda, S., Huang, S. Y., Salem, M. A., Hippo, D., Mizuta, Hiroshi

Integration of Tunnel-Coupled Double Nanocrystalline Silicon Quantum Dots with a Multiple-Gate Single-Electron Transistor (2007)

Kawata, Y., Khalafalla, M., Usami, K., Tsuchiya, Yoshishige, Mizuta, Hiroshi, Oda, S.

Silicon nanoelectronics for ‘More than Moore’ and ‘Beyond CMOS’ domains (Invited Talk) (2007)

Top-down and bottom-up approaches towards silicon nanoelectronics (2006)

Silicon nanoelectromechanical information devices – Present and future – (2006)

Tunnel-coupled double nanocrystalline Si quantum dots integrated into a single-electron transistor (2006)

Kawata, Y., Khalafalla, M.A.H., Usami, K., Tsuchiya, Y., Mizuta, Hiroshi, Oda, S.

Possible non-equilibrium Kondo effect in a nanocrystalline silicon point-contact transistor (2006)

Khalafalla, M. A. H., Mizuta, Hiroshi, Oda, S., Durrani, Z.A.K.

Hybrid simulation of the RF-SET and its charge sensitivity analysis (2006)

Manoharan, M., Mizuta, Hiroshi, Oda, S.

Fabrication of vertical nanopillar devices (2006)

Rafiq, M. A., Mizuta, Hiroshi, Uno, S., Durrani, Z. A. K.

Observation of quantum effects in the electron transport characteristics of a nanocrystalline silicon point contact transistor (2006)

Khalafalla, M. A. H., Mizuta, Hiroshi, Oda, S., Durrani, Z. A. K.

Design and analysis of functional NEMS-gate MOSFETs and SETs (2006)

Fabrication and evaluation of Si nanobridge transistor (2006)

Ogi, J., Mono, N., Khalafalla, M. A. H., Tsuchiya, Y., Mizuta, Hiroshi, Oda, S.

Electro-mechanical simulation of programming / readout characteristics for NEMS memory (2006)

Nagami, T., Momo, N., Tsuchiya, Y., Saito, S., Arai, T., Shimada, T., ...

Fabrication and characterization of nanoscale suspended floating gates for NEMS memory (2006)

Momo, N., Nagami, T., Matsuda, S., Tsuchiya, Y., Saito, S., Arai, T., ...

Fabrication of silicon 3D photonic crystal structures in 100nm scale using double directional etching method (2006)

Hippo, D., Kawata, Y., Tsuchiya, Y., Mizuta, Hiroshi, Oda, S., Urakawa, K., ...

Visible electroluminescence from size-controlled silicon quantum dots (2006)

Hippo, D., Tanaka, A., Usami, K., Tsuchiya, Y., Mizuta, Hiroshi, ...

Broadband variable chromatic dispersion in photonic-band electro-optic wavefuide (2006)

Ogawa, K., Tomiyama, K., Tan, Y., Doan, M., Bin, Y., ...

Identifying single-electron charging islands in a two-dimensional network of nanocrystalline silicon grains using Coulomb oscillation fingerprints (2006)

Khalafallah, M., Mizuta, Hiroshi, Durrani, Z. A. K.

Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots (2006)

Tsuchiya, Y., Takai, K., Momo, N., Nagami, T., Yamaguchi, S., Shimada, T., ...

Observation and analysis of tunneling properties of single spherical nanocrystalline silicon quantum dot (2006)

Surawijiya, A., Mizuta, Hiroshi, Oda, S.

Hopping conduction in size-controlled Si nanocrystals (2006)

Rafiq, M., Tsuchiya, Y., Mizuta, Hiroshi, Oda, S., Uno, S., Durrani, Z., ...

High-density assembly of nanocrystalline silicon quantum dots (2006)

Tanaka, A., Yamahata, G., Tsuchiya, Y., Usami, K., Mizuta, Hiroshi, Oda, S.

Observation of interdot coupling phenomena in nanocrystalline silicon point-contact structures (2006)

Khalafallah, M., Mizuta, Hiroshi, Oda, S., Durrani, Z. A. K.

Energy-balance modeling of short channel single-GB thin film transistors (2006)

Walker, P., Mizuta, Hiroshi

Energy-balance modeling of short channel single-GB thin film transistors (2006)

Walker, P., Mizuta, Hiroshi

Ballistic transport in silicon nanostructures (2006)

Mizuta, Hiroshi, Nishiguchi, K., Oda, S.

Nanocrystalline Silicon Memory Devices (2006)

Huang, S., Mizuta, Hiroshi, Oda, S.

Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium Silicate MIS Diode (2006)

Tsuchiya, Yoshishige, Furukawa, R, Suto, T, Nohira, H, Maruizumi, T, Shiraki, Y, ...

Bottom-up approach to silicon nanoelectronics (2005)

Charge storage in silicon nanocrystals and device application (2005)

Oda, S., Salem, M. A., Mizuta, Hiroshi

A new design of nanocrystalline silicon optical devices based on 3-dimensional photonic crystal structures (2005)

Hippo, D., Tanaka, A., Kawata, Y., Tsuchiya, Y., Mizuta, Hiroshi, ...

Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dot (2005)

Surawajiya, A., Mizuta, Hiroshi, Oda, S.

Temperature dependence of space charge limited current (SCLC) in thin films of silicon nanocrystals (2005)

Rafiq, M. A., Tsuchiya, Y., Mizuta, Hiroshi, Uno, S., Durrani, Z. A. K., Milne, W. I.

Formation of nanocrystalline silicon quantum dot arrays (2005)

Tanaka, A., Yamahata, G., Tsuchiya, Y., Usami, K., Mizuta, Hiroshi, Oda, S.

Physics and applications of silicon nanoelectromechanical information devices (2005)

Energy-balance modeling of short channel single-GB thin film transistors (2005)

Walker, P., Mizuta, Hiroshi

Atomistic simulation of quantum transport in nanoscale silicon transistors (2005)

Kurokawa, Y., Higashijima, S., Tsuchiya, Y., Okamoto, M., Mizuta, Hiroshi, Oda, S.

Electronic states and quantum transport in Si nanorod transistors (2005)

Kurokawa, Y., Higashijima, S., Tsuchiya, Y., Okamoto, M., Mizuta, Hiroshi, Oda, S.

Charge operation of nitrided nanocrystalline silicon dot memory devices (2005)

Huang, S., Mizuta, Hiroshi, Oda, S.

Ab-initio method of designing artificial quantum bits (2005)

Higashijima, S., Kurokawa, Y., Tsuchiya, Y., Okamoto, M., Mizuta, Hiroshi, Oda, S.

Charging-storing-discharging process in nitrided nanocrystalline silicon dots (2005)

Huang, S., Mizuta, Hiroshi, Oda, S.

Ab-initio calculations of electronic states in nano-crystalline Si quantum dots (2005)

Higashijima, S., Kurokawa, Y., Tsuchiya, Y., Okamoto, M., Mizuta, Hiroshi, Oda, S.

Variation of Electrostatic Coupling and Investigation of Current Percolation Paths in Nanocrystalline Silicon Cross Transistors (2005)

Khalafalla, M., Mizuta, Hiroshi, Oda, S., Durrani, Z. A. K.

Bottom-up fabrication of Si nanodot transistors usign the nc-Si dots solution (2005)

Yamahata, G., Tanaka, A., Kawata, Y., Tsuchiya, Y., Saito, S., Arai, T., ...

Mechanical property analysis and structural optimization for NEMS memory devices (2005)

Nagami, T., Momo, N., Tsuchiya, Y., Saito, S., Arai, T., Shimada, T., ...

Observation of Interdot Coupling Phenomena in Nanocrystalline Silicon Point-Contact Structure (2005)

Khalafalla, M., Mizuta, Hiroshi, Durrani, Z. A. K., Ahmed, H., Oda, S.

High-Density Assembly of Nanocrystalline Silicon Quantum Dots (2005)

Tanaka, A., Tsuchiya, Y., Usami, K., Mizuta, Hiroshi, Oda, S.

Variation of Electrostatic Coupling and Investigation of Current Percolation Paths in Nanocrystalline Silicon Cross Transistors (2005)

Khalafalla, M., Mizuta, Hiroshi, Oda, S., Durrani, Z. A. K.

Theoretical investigation of electron-phonon interaction in one-dimensional Si quantum dot array interconnected with silicon oxide layers (2005)

Uno, Shigeyasu, Mori, Nobuya, Nakazato, Kazuo, Koshida, Nobuyoshi, Mizuta, Hiroshi

Electronic and phononic states and their interactions in one-dimensional arrays of Si quantum dots interconnected with thin oxide layers is theoretically investigated. Electronic states under low...

Theoretical investigation of electron-phonon interaction in one-dimensional Si quantum dot array interconnected with silicon oxide layers (2005)

Uno, Shigeyasu, Mori, Nobuya, Nakazato, Kazuo, Koshida, Nobuyoshi, Mizuta, Hiroshi

Electronic and phononic states and their interactions in one-dimensional arrays of Si quantum dots interconnected with thin oxide layers is theoretically investigated. Electronic states under low...

In situ real-time spectroscopic ellipsometry study of HfO2 thin films grown by using the pulsed-source MOCVD (2005)

Zheng, Y., Mizuta, Hiroshi, Tsuchiya, Y., Endo, M., Sato, D., Oda, S.

Theoretical investigation of electron-phonon interaction in one-dimensional Si quantum dot array interconnected with silicon oxide layers (2005)

Uno, S., Mori, N., Nakazato, K., Koshida, N., Mizuta, Hiroshi

Simulation study of the dependence of submicron polysilicon thin film transistor output characteristics on grain boundary position (2005)

Walker, P., Uno, S., Mizuta, Hiroshi

Charge injection and trapping in silicon nanocrystals (2005)

Rafiq, M., Tsuchiya, Y., Mizuta, Hiroshi, Oda, S., Uno, S., Durrani, Z., ...

Reduction of acoustic phonon deformation potential in one-dimensional array of Si quantum dot interconnected with tunnel oxides (2005)

Uno, S., Mori, N., Nakazato, K., Koshida, N., Mizuta, Hiroshi

In situ real-time spectroscopic ellipsometry study of HfO2 thin films grown by using the pulsed-source MOCVD (2005)

Zheng, Y., Mizuta, Hiroshi, Tsuchiya, Y., Endo, M., Sato, D., Oda, S.

AFM current-imaging study for current density through nanocrystalline silicon dots embedded in SiO2 (2005)

Salem, M. A., Mizuta, Hiroshi, Oda, S., Fu, Y., Willander, M.

Assembly of Nanocrystalline Silicon Quantum Dots based on a Colloidal Solution Method (2005)

Tanaka, A., Yamahata, G., Tsuchiya, Y., Usami, K., Mizuta, Hiroshi, Oda, S.

Single-Electron Devices (in Japanese) (2005)

Kamiya, T., Amakawa, S., Mizuta, Hiroshi

NeoSilicon and its device applications (2005)

Oda, S., Mizuta, Hiroshi

High-density assembly of nanocrystalline silicon quantum dots (2005)

Tanaka, A., Tsuchiya, Yoshishige, Usami, K., Mizuta, Hiroshi, Oda, S.

High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots (2005)

Tsuchiya, Yoshishige, Takai, K, Momo, N, Nagami, T, Yamaguchi, S, Shimada, T, ...

Electron Transport and Device Applications of Nanocrystalline Silicon (2004)

Mizuta, Hiroshi, Khalafalla, M., Durrani, Z. A. K., Uno, S., Koshida, N., Tsuchiya, Y., ...

Significant reduction of phonon scattering potential in 1D Si quantum dot array interconnected with thin oxide layers (2004)

Uno, S., Mori, N., Nakazato, K., Mizuta, Hiroshi

Study of charge quantization in individual silicon quantum dots using Kelvin probe Force Microscopy (2004)

Salem, M. A., Tsuchiya, Y., Usami, K., Mizuta, Hiroshi, Oda, S.

Intergrain coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistor (2004)

Khalafalla, M., Mizuta, Hiroshi, Durrani, Z. A. K., Ahmed, H., Oda, S.

Observation of Coherent States in Coupled Nanocrystalline Si Double Dots at 4.2K (2004)

Khalafalla, M. A. H., Mizuta, Hiroshi, Durrani, A. K., Ahmed, H., Oda, S.

Advanced studies of high-k gate dielectrics toward future generation with equivalent gate oxide thickness of less than 1 nm (2004)

Tsuchiya, Y., Fujita, H., Sato, D., Endoh, M., Kurosawa, M., Nohira, H., ...

Neosilicon-created new applications (2004)

Shimada, T., Yamaguchi, S., Ando, M., Nakazato, K., Koshida, N., Takai, K., ...

High-speed and Nonvolatile Nano Electromechanical Memory incorporating Si Quantum Dots (2004)

Tsuchiya, Y., Takai, K., Momo, N., Oda, S., Yamaguchi, S., Shimada, T., ...

Pr-silicate Ultrathin Films for High-k Gate Dielectrics Prepared by Metal-Organic Chemical Vapor Deposition (2004)

Tsuchiya, Y., Fujita, H., Mizuta, Hiroshi, Nohira, H., Hattori, T., Oda, S.

AFM current imaging for surface oxidized nanocrystalline silicon dots (2004)

Salem, M. A., Mizuta, Hiroshi, Oda, S., Fu, Y., Willander, M.

Electron-phonon interaction in Si quantum dots interconnected with thin oxide layers (2004)

Uno, S., Mori, N., Nakazato, K., Koshida, N., Mizuta, Hiroshi

Nano Electromechanical Memory Device using Nanocrystalline Si Dots (2004)

Tsuchiya, Y., Takai, K., Momo, N., Yamaguchi, S., Shimada, T., Koyama, S., ...

Electron Coupling States in quantum dots in Nanocrystalline Silicon (2004)

Khalafalla, M. A. H., Mizuta, Hiroshi, Durrani, A. K., Ahmed, H., Oda, S.

Electron Energy Loss Behavior in Si Quantum Dots Interconnected with Tunnel Oxide Barriers (2004)

Uno, S., Mori, N., Nakazato, K., Koshida, N., Mizuta, Hiroshi

The Dependence of Deca-nanometre Poly-Si Thin Film Transistor Output Characteristics on the Grain Boundary Location (2004)

Walker, P. M., Mizuta, Hiroshi

Nanoscale Observation of Size and Potential for Charged Nanocrystalline Si Dots using KFM (2004)

Salem, M. A., Tsuchiya, Y., Usami, K., Mizuta, Hiroshi, Oda, S.

Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD (2004)

Fujita, H., Tsuchiya, Y., Mizuta, Hiroshi, Nohira, H., Hattori, T., Oda, S.

Formation of an Ordered Array of nc-Si Dots by Using a Solution Droplet Evaporation Method (2004)

Tsuchiya, Y., Iwasa, T., Tanaka, A., Usami, K., Mizuta, Hiroshi, Oda, S.

Probing electron charging in nanocrystalline Si dots using Kelvin Probe Force Microscopy (2004)

Salem, M. A., Mizuta, Hiroshi, Oda, S.

Nanosilicon for single-electron devices (2004)

Mizuta, Hiroshi, Furuta, Y., Kamiya, T., Tan, Y. T, Durrani, Z. A. K., Amakawa, S., ...

Improved off-current and subthreshold slope in aggressively scaled poly-Si TFTs with a single grain boundary in the channel (2004)

Walker, P., Mizuta, Hiroshi, Uno, S., Furuta, Y., Hasko, D.

Coherent States in a Coupled Quantum Dot Nanocrystalline Silicon Transistor (2004)

Khalafalla, M., Mizuta, Hiroshi, Durrani, Z. A. K.

Bottom-up Silicon Nanoelectronics (2004)

Mizuta, Hiroshi, Khalafalla, M., Durrani, Z. A. K., Uno, S., Koshida, N., Tsuchiya, Y., ...

Single-electron logic based on multiple-tunnel junctions (2004)

Amakawa, S., Tsukagoshi, K., Nakazato, K., Mizuta, Hiroshi, Alphenaar, B.

Electron Transport in Nanocrystalline Silicon (2004)

Durrani, Z.A.K., Kamiya, T., Mizuta, Hiroshi

Nanoscale Observation of Size and Potential for Charged Nanocrystalline Si Dots using KFM (2004)

Salem, M.A., Tsuchiya, Y., Usami, K., Mizuta, Hiroshi, Oda, S.

Nano-electro-mechanical device application of neosilicon (2004)

Shimada, T., Ando, M., Yamaguchi, S., Momo, N., Takai, K., Tsuchiya, Y., ...

Studies of high-speed non-volatile nanoelectro-mechanical systems memory device using “neosilicon (2004)

Tsuchiya, Y., Takai, K., Momo, N., Nagami, T., Mizuta, Hiroshi, Oda, S.

Electrons, Phonons, and Electron-Phonon Interactions in Neosilicon (2004)

Uno, S., Nakazato, K., Koshida, N., Mizuta, Hiroshi, Oda, S.

Switching of Single-Electron Oscillations in Dual-Gated Nanocrystalline Silicon Point-Contact Transistors (2003)

Khalafalla, Mohammed A H, Durrani, Zahid Ali Khan, Mizuta, Hiroshi

Switching of single-electron transport is observed in point-contact transistors fabricated in nanocrystalline silicon thin films, where the grain size is ~10-40nm. The effects may be associated with...

Switching of Single-Electron Oscillations in Dual-Gated Nanocrystalline Silicon Point-Contact Transistors (2003)

Khalafalla, Mohammed A H, Durrani, Zahid Ali Khan, Mizuta, Hiroshi

Switching of single-electron transport is observed in point-contact transistors fabricated in nanocrystalline silicon thin films, where the grain size is ~10-40nm. The effects may be associated with...

A surface-potential-based cylindrical surrounding-gate MOSFET model (2003)

Amakawa, S., Nakazato, K., Mizuta, Hiroshi

Grain boundary effects on subthreshold behaviour in single grain boundary nano-TFTs (2003)

Walker, P. M., Furuta, Y., Mizuta, Hiroshi

Improved device characteristics for deca-nanometre scale TFTs with a single GB in the channel (2003)

Walker, P. M., Mizuta, Hiroshi, Uno, S., Furuta, Y.

Dual gate control of Coulomb blockade oscillations in a double Si grain structure (2003)

Khalafalla, M., Mizuta, Hiroshi, Durrani, Z. A. K.

Switching of single-electron oscillations in dual-gated nanocrystalline silicon point-contact transistors (2003)

Khalafalla, M., Mizuta, Hiroshi, Durrani, Z. A. K.

New insights into electron emission from silicon nanocrystallites (2003)

Uno, S., Durrani, Z. A. K., Khalafalla, M., Nakazato, K., Mizuta, Hiroshi

Nanosilicon for single-electron devices (2003)

Mizuta, Hiroshi, Furuta, Y., Kamiya, T., Tan, Y. T., Durrani, Z. A. K., Nakazato, K., ...

Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices (2003)

Kamiya, T., Furuta, Y., Durrani, Z. A. K., Mizuta, Hiroshi, Ahmed, H.

Frequency-dependent electrical characteristics of DNA using molecular dynamics simulation (2003)

Ikeda, M., Nakazato, K., Mizuta, Hiroshi, Green, M., Hasko, D., Ahmed, H.

New insights in high-energy electron emission and underlying transport physics of nanocrystalline Si (2003)

Uno, S., Nakazato, K., Yamaguchi, S., Koshida, N., Mizuta, Hiroshi

Double-gate control of electronic transport in nanoscale point-contact in neo-silicon (2003)

Khalafallah, M., Durrani, Z. A. K., Mizuta, Hiroshi

Single-electron charging phenomena in nano/polycrystalline silicon point-contact transistors (2003)

Mizuta, Hiroshi, Furuta, Y., Kamiya, T., Tan, Y. T., Durrani, Z. A. K., Nakazato, K., ...

Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices (2003)

Kamiya, T., Durrani, Z.A.K., Ahmed, H., Sameshima, T., Furuta, Y., Mizuta, Hiroshi, ...

Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O vapor annealing probed using point-contact devices (2003)

Kamiya, T., Durrani, Z. A. K., Sameshima, T., Furuta, Y., Mizuta, Hiroshi, ...

Switching of single-electron oscillations in dual-gated nanocrystalline silicon point-contact transistor (2003)

Kalafalla, M.A.H., Mizuta, Hiroshi, Durrani, Z.A.K.

Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices (2002)

Kamiya, T., Furuta, Y., Durrani, Z. A. K., Mizuta, Hiroshi, Ahmed, H.

Frequency-dependent electrical characteristics of DNA using molecular dynamics simulation (2002)

Ikeda, M., Nakazato, K., Mizuta, Hiroshi, Green, M., Hasko, D.

Single-electron charging phenomena in nano/polycrystalline silicon point-contact transistors (2002)

Mizuta, Hiroshi, Furuta, Y., Kamiya, T., Tan, Y. T., Durrani, Z. A. K., Nakazato, K., ...

A new approach to failure analysis and yield enhancement of very large-scale integrated systems (2002)

Amakawa, S., Nakazato, K., Mizuta, Hiroshi

Tunnel barrier properties in polycrystalline-Si single-electron transistors”, (2002)

Furuta, Y., Mizuta, Hiroshi, Kamiya, T., Tan, Y. T., Nakazato, K., Durrani, Z. A. K., ...

Negative differential conductance and threshold voltage distribution in two-island single-electron tunnelling structures (2002)

Evans, G., Mizuta, Hiroshi

Frequency-dependent permittivity of DNA using molecular dynamics simulation (2002)

Ikeda, M., Nakazato, K., Mizuta, Hiroshi, Green, M., Hasko, D., Ahmed, H.

Hitachi-Cambridge collaboration on nanoelectronics and recent progress on Coulomb blockade devices (Invited Talk) (2002)

Characterisation of tunnel barriers in polycrystalline silicon point-contact single-electron transistors (2002)

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Kamiya, T., Tan, Y. T., Durrani, Z. A. K., ...

Analysis of negative differential conductance in a two-island Coulomb blockade system by a polytope approximation in phase space (2002)

Evans, G., Mizuta, Hiroshi

Control of grains and grain coundaries in nano/plycrystalline silicon for single-electron device applications (2002)

Mizuta, Hiroshi, Furuta, Y., Kamiya, T., Tan, Y.T., Durrani, Z.A.K., Uno, S., ...

Hitachi-Cambridge collaboration on nanoelectronics and recent progress on Coulomb blockade devices (Invited Talk) (2002)

Characterization of tunnel-barriers in polycrystalline Si point-contact single-electron transistors (2001)

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Kamiya, T., Tan, Y. T., Durrani, Z. A. K., ...

Local disorder effects on electron transport in silicon nanostructures (2001)

Mizuta, Hiroshi, Furuta, Y., Evans, G., Nakazato, K., Kamiya, T., Tan, Y. T., ...

Silicon Stacked Tunnel Transistor PLED and its Applications to DRAM (2001)

Nakazato, K., Itoh, K., Mizuta, Hiroshi, Ahmed, H.

The role of tunnel barriers in Phase-State Low Electron-Number Drive Transistors (PLEDTRs) (2001)

Mizuta, Hiroshi, Wagner, Mathias, Nakazato, Kazuo

This paper presents a numerical analysis of the role of tunnel barriers in explaining the experimental I-V characteristics of a new vertical tunnel transistor called Phase-state Low Electron-number...

The role of tunnel barriers in Phase-State Low Electron-Number Drive Transistors (PLEDTRs) (2001)

Mizuta, Hiroshi, Wagner, Mathias, Nakazato, Kazuo

This paper presents a numerical analysis of the role of tunnel barriers in explaining the experimental I-V characteristics of a new vertical tunnel transistor called Phase-state Low Electron-number...

Electron transport via a few grain boundaries in heavily doped polycrystalline-silicon point contact devices (2001)

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Tan, Y. T., Kamiya, T., Durrani, Z. A. K., ...

Analysis of multi-phase clocked electron pump circuits (2001)

Amakawa, S., Mizuta, Hiroshi, Nakazato, K.

Nanocrystalline silicon point-contact single-electron transistor (2001)

Durrani, Z. A. K., Kamiya, T., Tan, Y. T., Mizuta, Hiroshi, Furuta, Y., Ahmed, H.

Carrier transport in ultra-thin nano/polycrystalline silicon films and nanowires (2001)

Kamiya, T., Tan, Y. T., Furuta, Y., Mizuta, Hiroshi, Durrani, Z. A. K., Ahmed, H.

Modelling of structural and electrical characteristics of randomly doped silicon nanowires in the Coulomb-blockade regime (2001)

Evans, G., Mizuta, Hiroshi, Ahmed, H.

Single-electron charging phenomena in silicon nanopillars with and without silicon nitride tunnel barriers (2001)

Pooley, D. M., Ahmed, H., Mizuta, Hiroshi, Nakazato, K.

Nanoscale Coulomb blockade memory and logic devices (2001)

Mizuta, Hiroshi, Muller, H. O., Tsukagoshi, K., Williams, D., Durrani, Z., Irvine, A., ...

Carrier transport across few grain boundaries in highly doped polycrystalline silicon (2001)

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Tan, Y. T., Kamiya, T., Durrani, Z. A. K., ...

The role of tunnel barriers in Phase-state Low Electron-number Drive Transistors (PLEDTRs) (2001)

Mizuta, Hiroshi, Wagner, M., Nakazato, K.

Analysis of multi-phase clocked electron pumps consisting of single-electron transistors (2001)

Amakawa, S., Mizuta, Hiroshi, Nakazato, K., Ahmed, H.

Design optimization of Coulomb blockade devices (2001)

Muller, H. O., Williams, D., Mizuta, Hiroshi

Carrier transport across a few grain boundaries in polycrystalline silicon (2001)

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Tan, Y.T., Kamiya, T., Durrani, Z.A.K., ...

Carrier transport across a few grain boundaries in polycrystalline silicon (2000)

Furuta, Y., Mizuta, Hiroshi, Nakazato, K., Tan, Y. T., Kamiya, T., Durrani, Z. A. K., ...

Analysis of multi-clocked electron pump consisting of single-electron transistors (2000)

Amakawa, S., Mizuta, Hiroshi, Nakazato, K.

A fast three-dimensional MC simulator for tunneling diodes (2000)

Wagner, M., Mizuta, Hiroshi, Nakazato, K.

Nanoscale Coulomb blockade memory and logic devices (2000)

Mizuta, Hiroshi, Tsukagoshi, K., Williams, D., Nakazato, K., Durrani, Z., ...

Single-electron charging phenomena in silicon nano-pillars with and without silicon nitride barriers (2000)

Pooley, D., Ahmed, H., Mizuta, Hiroshi, Nakazato, K.

Simulation of electronic states and transport properties of silicon nanowires with random dopant distribution (2000)

Evans, G., Mizuta, Hiroshi, Ahmed, H.

Performance optimisation of single-electron pump circuits (2000)

Amakawa, S., Mizuta, Hiroshi, Nakazato, K.

Design optimization of Coulomb blockade devices (2000)

Williams, D., Mizuta, Hiroshi

Phase-state Low Electron-number Drive Random Access Memory (PLEDM) (2000)

Nakazato, K., Itoh, K., Ahmed, H., Mizuta, Hiroshi, Kisu, T., Kato, M., ...

私のアダム・スミス研究(講演会要旨) (2000)

私のアダム・スミス研究(講演会要旨) (2000)

Coulomb blockade and disorder in 2D quantum dot arrays (2000)

Muller, H. O., Williams, D., Mizuta, Hiroshi

Scaling of single-electron tunneling current through ultrasmall tunnel junction (2000)

Amakawa, S., Hoh, K., Fujishima, M., Mizuta, Hiroshi, Tsukagoshi, K.

Fabrication of MOS-integrated metallic single-electron memories (2000)

Pepin, A., Vieu, C., Launois, H., Rosmeulen, M., Rossum, M. Van, Muller, H. O., ...

Memory cell simulation on the nanometer scale (2000)

Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance (2000)

Williams, D., Mizuta, Hiroshi, Durrani, Z. A. K.

Single-Electron Logic Devices (2000)

Nakazato, K., Mizuta, Hiroshi

Simulation of deposition and conductance of granular metallic films (1999)

Boero, M., Vincent, J. K., Inkson, J. C., Williams, D., Mizuta, Hiroshi

Fabrication of MOS-integrated metallic single-electron memories (1999)

Pepin, A., Vieu, C., Launois, H., Rosmeulen, M., Rossum, M. Van, ...

Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance (1999)

Williams, D., Mizuta, Hiroshi

1D and 2D metallic granular films: simulation of growth and electrical properties, and yield problems for Coulomb blockade devices (1999)

Boero, M., Williams, D., Mizuta, Hiroshi, Inkson, J. C.

Simulation of single electron multiple tunnel junctions in CMOS environment (1999)

Williams, D., Mizuta, Hiroshi

Simulation of Si multiple tunnel junctions (1999)

Williams, D., Mizuta, Hiroshi, Irvine, A. C., Durrani, Z. A. K., Ahmed, H.

A 60nm channel length silicon stacked tunnel transistor (1999)

Nakazato, K., Itoh, K., Mizuta, Hiroshi, Ahmed, H.

High-speed single-electron memory and logic (1999)

Mizuta, Hiroshi, Tsukagoshi, K., Nakazato, K., Ahmed, H.

Single- and few-electron memories (Invited Talk) (1999)

Simulation of deposition and conductance of discontinuous metallic films (1999)

Boero, M., Williams, D., Mizuta, Hiroshi, Inkson, J. C.

Numerical analysis of an anomalous current assisted by locally generated deep traps in pn junctions (1999)

Yamaguchi, K., Teshima, T., Mizuta, Hiroshi

Silicon stacked tunnel transistor for high-speed and high-density random access memory gain cell (1999)

Nakazato, K., Itoh, K., Mizuta, Hiroshi, Ahmed, H.

Simulation of Si multiple tunnel junctions (1999)

Williams, D., Mizuta, Hiroshi, Durrani, Z. A. K., Irvine , A. C., Ahmed, H.

Design and analysis of high-speed random access memory with Coulomb blockade charge confinement (1999)

Katayama, K., Mizuta, Hiroshi, Williams, D., Nakazato, K.

Origin of yield problems of single electron devices based on evaporated granular films (1999)

Boero , M., Vincent, J. K., Inkson, J. C., Mizuta, Hiroshi, Mulheran, P. A.

Three-dimensional scattering matrix simulation of resonant tunnelling via quasi-bound states in vertical quantum dots (1999)

Coulomb blockade in silicon nano-pillars (1999)

Pooley, D. M., Ahmed, H., Mizuta, Hiroshi, Nakazato, K.

Single- and few-electron memories (Invited Talk) (1999)

Simulation of high-speed single-electron memory (1998)

Mizuta, Hiroshi, Katayama, K., Williams, D.

Disorder in 2D quantum dot arrays (1998)

Katayama, K., Williams, D., Mizuta, Hiroshi

Single electron memory device simulation (1998)

Katayama, K., Mizuta, Hiroshi

Normally-off PLED (Planar Localised Electron Device) for non-volatile memory (1998)

Mizuta, Hiroshi, Nakazato, K., Piotrowicz, P. J. A., Itoh, K., Teshima, T., Yamaguchi, K., ...

Recent progress of single electron memory (1998)

Nakazato, K., Mizuta, Hiroshi, Ahmed, H.

High-speed single-electron memory: cell design and architecture (1998)

Mizuta, Hiroshi, Williams, D., Katayama, K., Nakazato, K., Ahmed, H.

Architecture of lateral single electron memory (L-SEM) (1998)

Katayama, K., Mizuta, Hiroshi, Williams, D., Nakazato, K.

Effects of disorder on the blockade voltage of 1D and 2D quantum dot arrays (1998)

Katayama, K., Williams, D., Mizuta, Hiroshi

Three-dimensional S-matrix simulation of single-electron resonant tunnelling through random ionised donor states (1998)

Effects of disorder on the blockade voltage of two-dimensional quantum dot arrays (1998)

Katayama, K., Mizuta, Hiroshi

Three-Dimensional S-Matrix Simulation of Single-Electron Resonant Tunnelling Through Random Ionised Donor States (1998)

Hiroshi Mizuta

This paper presents a numerical study of single-electron resonant tunnelling (RT) assisted by a few ionised donors in a laterally-confined resonant tunnelling diode (LCRTD). The 3D multi-mode...

Design and analysis of a new integrated single-electron memory cell (1997)

Mizuta, Hiroshi, Wagner, M., Williams, D., Ahmed, H.

A Monte Carlo analysis of new nanoscale ballistic field effect transistors (BFETs) for millimetre-wave applications (1996)

Mizuta, Hiroshi, Teshima, T., Matsumoto, H., Higuchi, K., Ohkura, Y., Yamaguchi, K.

オークニイ島のベイキー蔵書 (1996)

オークニイ島のベイキー蔵書 (1996)

Numerical study of single-electron resonant tunnelling via a few ionised donors in laterally confined resonant tunnelling diodes (1996)

Theoretical study of tunnelling current in the access region of various heterojunction field-effect transistor structures (1996)

Jansen, P., Mizuta, Hiroshi, Yamaguchi, K.

Three-dimensional S-matrix simulation of single-electron resonant tunnelling through random ionised donor states (1995)

The Physics and Applications of Resonant Tunnelling Diodes; Cambridge Studies in Semiconductor Physics and Microelectronic Engineering 2 (1995)

Mizuta, Hiroshi, Tanoue, T.

Electrical studies of charge build-up and phonon-assisted tunneling in double-barrier materials with very thick spacer layers (1994)

Goodings, C. J., Mizuta, Hiroshi, Cleaver, J. R. A.

Variable-area resonant tunneling diodes using implanted in-plane gates (1994)

Goodings, C. J., Mizuta, Hiroshi, Cleaver, J. R. A., Ahmed, H.

The electron mobility transition in n-GaAs heavily doped channel (1994)

Ohkura, Y., Mizuta, Hiroshi, Ohbu, I., Kagaya, O., Katayama, K., Ihara, S.

Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates (1994)

Goodings, C.J., Mizuta, Hiroshi, Cleaver, J.R.A., Ahmed, H.

Dynamic simulation of multiple trapping processes and anomalous frequency dependence in GaAs MESFETs (1994)

Ho, S., Oohira, M., Kagaya, O., Moriyoshi, A., Mizuta, Hiroshi, Yamaguchi, K.

Theoretical analysis of transconductance enhancement caused by electron-concentration- dependent screening in heavily doped systems (1994)

Ho, S., Moriyoshi, A., Ohbu, I., Kagaya, O., Mizuta, Hiroshi, Yamaguchi, K.

Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates (1994)

Goodings, C. J., Mizuta, Hiroshi, Cleaver, J. R. A., Ahmed, H.

Electron confinement in variable-area resonant tunnelling diodes using in-plane implanted gates (1993)

Goodings, C., Mizuta, Hiroshi, Cleaver, J. R. A., Ahmed, H.

Theoretical analysis of transconductance enhancement due to electron concentration dependent screening in heavily doped systems (1993)

Ho, S., Moriyoshi, A., Ohbu, I., Kagaya, O., Mizuta, Hiroshi, Yamaguchi, K.

Dynamic simulation of multiple trapping processes and anomalous frequency dependence in GaAs MESFETs (1993)

Ho, S., Oohira, M., Kagoya, O., Moriyoshi, A., Mizuta, Hiroshi, Yamaguchi, K.

Time dependence of the surface Fermi level of GaAs in atomosphere (1993)

Ohbu, I., Takahama, M., Mizuta, Hiroshi

Complex-energy analysis of intrinsic lifetimes of resonances in biased multiple quantum wells (1993)

Coherent-electron intrinxic multistability in a double-barrier tunnelling diode (1993)

Multistable charge build-up and a new switching principle in coherent-electron tunneling devices (1993)

Quantum transport in laterally confined resonant tunnelling structures (1992)

Mizuta, Hiroshi, Goodings, C., Wagner, M., Ho, S.

Optical properties of electric field controlled lateral superlattices (1992)

Yazawa, Y., Mizuta, Hiroshi, Fukatsu, S., Gossard, A. C., Shiraki, Y.

Effect of LO-phonon scattering on electrical bistability in resonant tunneling diodes (1992)

Three-dimensioal numerical simulation of multi-mode quantum transport in zero-dimensioanl resonant tunnelling diodes (1992)

Mizuta, Hiroshi, Wagner, M., Ho, S., Yamaguchi, K.

Simulation of the effect of emitter doping on the delay time in AlGaAs/GaAs heterojunction bipolar transistors (1992)

Kusano, C., Mizuta, Hiroshi, Mochizuki, K., Yamaguchi, K.

Three-dimensional numerical simulation of multi-mode quantum transport in zero-dimensional resonant tunneling diodes (1992)

Mizuta, Hiroshi, Goodings, C. J., Wagner, M., Ho, S.

Effects of reservoirs on tunneling and interference in mesoscopic systems (1991)

Ho, S., Mizuta, Hiroshi, Yamaguchi, K.

Transient quantum transport simulation based on the statistical density matrix (1991)

Mizuta, Hiroshi, Goodings, C. J.

Density matrix calculations of femtosecond electron dynamics in resonant tunnelling diodes (1991)

Mizuta, Hiroshi, Goodings, C. J.

The new two-dimensional electron gas base HBT (2DEG-HBT): Two-dimensional numerical simulation (1991)

Rabinzohn, P. D., Usagawa, T., Mizuta, Hiroshi, Yamaguchi, K.

Transient quantum transport simulation based on the statistical density matrix (1991)

Mizuta, Hiroshi, Goodings, C. J.

Multiple-well RTD with InGaAs strained quantum wells (1990)

Tanoue, T., Mizuta, Hiroshi

Comprehensive analysis of bifunctional 2DEG-HBTs (1990)

Usagawa, T., Rabinzohn, P. D., Mizuta, Hiroshi, Hiruma, K., Kawata, M., Yamaguchi, K.

Fabrication of lateral superlattices on GaAs/AlGaAs heterostructures by gas-assisted focused ion beam etching (1990)

Goodings, C. J., Mizuta, Hiroshi, Ochiai, Y., Cleaver, J. R. A., Ahmed, H.

Theoretical analysis of peak-to-valley ratio degradation caused by scattering processes in multi-barrier resonant tunneling diodes (1989)

Mizuta, Hiroshi, Tanoue, T., Takahashi, S.

The influence of DX centers in heavily doped emitter of AlGaAs/GaAs heterojunction bipolar transistors (1989)

Kusano, C., Mizuta, Hiroshi, Yamaguchi, K.

Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's (1989)

Mizuta, Hiroshi, Yamaguchi, K., Yamane, M., Tanoue, T., Takahashi, S.

Improved performance of submicrometer-gate GaAs MESFET's with an Al0.3Ga0.7As buffer layer grown by metal organic vapor phase epitaxy (1989)

Hiruma, K., Mori, M., Yanakura, E., Mizuta, Hiroshi, Takahashi, S.

High performance GaAs hetero-buffered MESFET's grown by 2 growth zone (1989)

Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi, Takahashi, S.

Double negative resistance properties of a triple-well resonant tunneling diode (1988)

Tanoue, T., Mizuta, Hiroshi, Takahashi, S.

High performance GaAs hetero-buffered MESFET's grown by 2 growth zone (1988)

Hiruma, K., Yanakura, E., Mori, M., Mizuta, Hiroshi, Takahashi, S.

Multiple-valued logic applications of a triple-well resonant tunneling diode (1988)

Kusano, C., Tanoue, T., Mizuta, Hiroshi, Takahashi, S.

Multiple-valued logic application of a triple-well resonant tunneling diode (1988)

Kusano, C., Tanoue, T., Mizuta, Hiroshi, Takahashi, S.

A new triple-well resonant tunneling diode with controllable double-negative resistance (1988)

Mizuta, Hiroshi, Tanoue, T., Takahashi, S.

A Triple-well resonant tunneling diode for multiple-valued logic application (1988)

Tanoue, T., Mizuta, Hiroshi, Takahashi, S.

GaAs MESFET's fabricated by new self-alignment technology (1987)

Yanokura, E., Mizuta, Hiroshi, Mori, M., Takahashi, S.

Surface Potential Effect on Gate-Drain Avalanche Breakdown in GaAs MESFET's (1987)

Mizuta, Hiroshi, Yamaguchi, K., Takahashi, S.

Theory of spin-polarized Auger electrons from ferromagnetic materials (1985)

Mizuta, Hiroshi, Kotani, A.

Theory of core photoemission spectra in CeO2 (1985)

Kotani, A., Mizuta, Hiroshi, Jo, T., Parlebas, J. C.

Theory of spin-polarized Auger electron spectra in ferromagnetic materials with particular attention to L23M23M23 Auger spectrum in Fe83B17 (1984)

Kotani, A., Mizuta, Hiroshi

アダム・スミスにおける同感概念の成立 -「他人の存在は彼の学説にとって決定的な役割を果してゐる」太田可夫アダム・スミスの道徳哲学について(一橋論叢二巻六号) (1968)

アダム・スミスにおける同感概念の成立 -「他人の存在は彼の学説にとって決定的な役割を果してゐる」太田可夫アダム・スミスの道徳哲学について(一橋論叢二巻六号) (1968)

ジョン・ローガンとスコットランド歴史学派 (1966)

ジョン・ローガンとスコットランド歴史学派 (1966)

アダム・スミス : 教育論を中心に (1958)

アダム・スミス : 教育論を中心に (1958)

ジョン・ボウル著『ホッブズとその批判者たち - 一七世紀憲政主義の一研究』 (1953)

ジョン・ボウル著『ホッブズとその批判者たち - 一七世紀憲政主義の一研究』 (1953)

ハーヴァード大学クレス文庫とその刊行物 (1951)

ハーヴァード大学クレス文庫とその刊行物 (1951)

アダム・スミスの会 (1950)

ドッブ『資本主義の発展にかんする研究』 (1950)

アダム・スミスの会 (1950)

ドッブ『資本主義の発展にかんする研究』 (1950)