Early stage of Ge growth on Si(001) vicinal surfaces with an 8 degrees miscut along [110] (2007)
Szkutnik, PD, Sgarlata, A, Balzarotti, A, Motta, N, Ronda, A, Berbezier, I
The atomistic pathway towards the growth of semiconductors heterostructures on vicinal surfaces is investigated in a special experiment. A step-by-step study of the early stages of Ge deposition at...
Portavoce, A., Gas, P., Berbezier, I., Ronda, A., Christensen, J.S., Svensson, B.
Si1-xGex/Si1-yGey/Si(100) heterostructures grown by Molecular Beam Epitaxy (MBE) were used in order to study B surface segregation during growth and B lattice diffusion. Ge concentration and stress...
Portavoce, A., Gas, P., Berbezier, I., Ronda, A., Christensen, J.S., Svensson, B.
Si1-xGex/Si1-yGey/Si(100) heterostructures grown by Molecular Beam Epitaxy (MBE) were used in order to study B surface segregation during growth and B lattice diffusion. Ge concentration and stress...
Influence of kinetic roughening on the epitaxial growth of silicon (1994)
Chevrier, J., Cruz, A., Pinto, N., Berbezier, I., Derrien, J.
The low temperature homoepitaxial growth of silicon has been probed in situ by Reflection High Energy Electron Diffraction (RHEED) in a Molecular Beam Epitaxy (MBE) chamber in the temperature range...
Influence of kinetic roughening on the epitaxial growth of silicon (1994)
Chevrier, J., Cruz, A., Pinto, N., Berbezier, I., Derrien, J.
The low temperature homoepitaxial growth of silicon has been probed in situ by Reflection High Energy Electron Diffraction (RHEED) in a Molecular Beam Epitaxy (MBE) chamber in the temperature range...
Selective and epitaxial deposition of β-FeSi2 onto silicon by RTP-CVD (1992)
Regolini, J., Trincat, F., Berbezier, I., Palleau, J., Mercier, J., Bensahel, D.
We present the preparation for the first time of selective and epitaxial β-FeSi2 on oxidized and patterned $4''$-silicon wafers. These layers are obtained by Low Pressure Chemical Vapor...
Selective and epitaxial deposition of β-FeSi2 onto silicon by RTP-CVD (1992)
Regolini, J., Trincat, F., Berbezier, I., Palleau, J., Mercier, J., Bensahel, D.
We present the preparation for the first time of selective and epitaxial β-FeSi2 on oxidized and patterned $4''$-silicon wafers. These layers are obtained by Low Pressure Chemical Vapor...