Structural Properties of Ge Nanocrystals Embedded in Sapphire (2008)
Sharp, I.D., Xu, Q., Yi, D.O., Yuan, C.W., Beeman, J.W., Yu, K.M., ...
Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy (2008)
Sharp, I.D., Xu, Q., Yuan, C.W., Beeman, J.W., Ager III, J.W., Chrzan, D.C., ...
Kinetics of visible light photo-oxidation of Ge nanocrystals: Theory and in situ measurement (2006)
Sharp, I.D., Xu, Q., Yuan, C.W., Beeman, J.W., Ager III, J.W., Chrzan, D.C., ...
Superheating and supercooling of Ge nanocrystals embedded in SiO2 (2006)
Xu, Q., Sharp, I.D., Yuan, C.W., Yi, D.O., Liao, C.Y., Glaeser, A.M., ...
Compositional tuning of ferromagnetism in Ga1-xMnxP (2006)
Farshchi, R., Scarpulla, M. A., Stone, P. R., Yu, K. M., Sharp, I. D., Beeman, J. W., ...
We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP...
Stone, P. R., Scarpulla, M. A., Farshchi, R., Sharp, I. D., Beeman, J. W., Yu, K. M., ...
We have measured the X-ray absorption (XAS) and X-ray magnetic circular dichroism (XMCD) at the Mn L3,2 edges in ferromagnetic Ga1-xMnxP films for 0.018
Compositional tuning of ferromagnetism in Ga1-xMnxP (2006)
Farshchi, R., Scarpulla, M.A., Stone, P.R., Yu, K.M., Sharp, I.D., Beeman, J.W., ...
Large melting point hysteresis of Ge nanocrystals embedded in SiO2 (2006)
Xu, Q., Sharp, I.D., Yuan, C.W., Yi, D.O., Liao, C.Y., Glaeser, A.M., ...
Mn L3,2 X-ray absorption and magnetic circular dichroism in ferromagnetic Ga1-xMnxP (2006)
Stone, P. R., Scarpulla, M. A., Farshchi, R., Sharp, I. D., Haller, E. E., Dubon, O. D., ...
We have measured the X-ray absorption (XAS) and X-ray magnetic circular dichroism (XMCD)at the Mn L3,2 edges in ferromagnetic Ga1-xMnxP for 0.018
Mn L3,2 X-ray absorption and magnetic circular dichroism in ferromagnetic Ga1-xMnxP (2006)
Stone, P.R., Scarpulla, M.A., Farshchi, R., Sharp, I.D., Haller, E.E., Dubon, O.D., ...
A Chemical Approach to 3-D Lithographic Patterning of Si and Ge Nanocrystals (2005)
Sharp, I.D., Xu, Q., Yi, D.O., Liao, C.Y., Ager III, J.W., Beeman, J.W., ...
Ion implantation into silica followed by thermal annealing is an established growth method for Si and Ge nanocrystals. We demonstrate that growth of Group IV semiconductor nanocrystals can be...
Multiband GaNAsP Quaternary Alloys (2005)
Yu, K.M., Walukiewicz, W., Ager III, J.W., Bour, D., Farshchi, R., Dubon, O.D., ...
Germanium Nanocrystals Embedded in Sapphire (2005)
Xu, Q., Sharp, I.D., Liao, C.Y., Yi, D.O., Ager III, J.W., Beeman, J.W., ...
Stable, free-standing Ge nanocrystals (2005)
Sharp, I.D., Xu, Q., Liao, C.Y., Yi, D.O., Beeman, J.W., Liliental-Weber, Z., ...