Submicrometer InAlAs/InGaAs Double-Gate HEMT’s on Transferred Substrate (2004)
Wichmann, N., Duszynski, I., Parenty, T., Bollaert, S., Mateos, J., Wallart, X., ...
This paper reports fabrication, DC and RF characterization of the In0.52Al0.48As/In0.53Ga0.47As doublegate HEMTs with sub-micron gate lengths. These devices present a maximum extrinsic...