Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors (2007)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a...
Transport spectroscopy of a single dopant in a gated silicon nanowire (2007)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant...
Transport spectroscopy of a single dopant in a gated silicon nanowire (2006)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant...
Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors (2006)
Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., ...
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a...