Strain relaxation in nanopatterned strained silicon round pillars (2007)
Himcinschi, C., Singh, R., Radu, I., Milenin, A.P., Erfurth, W., Reiche, M., ...
Periodic arrays of strained Si (sSi) round nanopillars were fabricated on sSi layers deposited on SiGe virtual substrates by electron-beam lithography and subsequent reactive-ion etching. The strain...
Uniaxially strained silicon by wafer bonding and layer transfer (2007)
Himcinschi, C., Radu, I., Muster, F., Singh, R., Reiche, M., Petzold, M., ...
Uniaxial strain on wafer-level was realised by mechanically bending and direct wafer bonding of Si wafers in the bent state followed by thinning one of the Si wafers by the smart-cut process. This...
POSTHROMBOLYSIS HAEMATOCHESIS, DIAGNOSIS ELEMENT FOR COLONIC COLO-RECTAL CANCER (2007)
V. Scripcariu, Elena Dajbog, I. Radu, R. Dănilă, Adriana Pricop, Irina Ristescu, ...
Colonic cancer has a high incidence in European eastern population. In Romania an accurate screening protocol for colorectal cancer is not effective. The diagnosis is made sometimes by chance, due to...
Uniaxially strained silicon by wafer bonding and layer transfer. (2007)
Himcinschi, C., Radu, I., Muster, F., Singh, R., Reiche, M., Petzold, M., ...
Strain relaxation in nanopatterned strained silicon round pillars. (2007)
Himcinschi, C., Singh, R., Radu, I., Milenin, A. P., Erfurth, W., Reiche, M., ...
Singh, R., Radu, I., Reiche, M., Himcinschi, C., Kuck, B., Tillack, B., ...
Ambient pressure plasma activation for low temperature bonding (2006)
Eichler, M., Michel, B., Thomas, M., Ruddy, C., Reinecke, H., ...
Compared to low pressure plasma and wet chemical treatments, respectively, the activation wuth dielectric barrier discharge (DBD) is very fast, cost efficient and environmentally firendly. This paper...
sSOI fabrication by wafer bonding and layer splitting of thin SiGe virtual substrates (2006)
Radu, I., Himcinschi, C., Singh, R., Reiche, M., Gösele, U., Christiansen, S. H., ...
Relaxation of strain in patterned strained silicon investigated by UV Raman spectroscopy (2006)
Himcinschi, C., Radu, I., Singh, R., Erfurth, W., Milenin, A. P., Reiche, M., ...
From thin relaxed SiGe buffer layers to strained silicon directly on oxide (2006)
Mantl, S., Buca, D., Holländer, B., Lenk, S., Hueging, N., Luysberg, M., ...
Investigation of helium implantation induced blistering in InP (2006)
Singh, R., Radu, I., Scholz, R., Himcinschi, C., Gösele, U., Christiansen, S. H.
Formation of nanovoids in high-dose hydrogen implanted GaN (2006)
Radu, I., Singh, R., Scholz, R., Gösele, U., Christiansen, S. H.
Low temperature InP layer transfer onto Si by helium implantation and direct wafer bonding (2006)
Singh, R., Radu, I., Scholz, R., Himcinschi, C., Gösele, U., Christiansen, S. H.
Uniaxially strained silicon by wafer bonding and layer transfer (2006)
Himcinschi, C., Radu, I., Muster, F., Singh, R., Reiche, M., Petzold, M., ...
Magnetic field asymmetry of nonlinear transport in carbon nanotubes (2005)
Wei, J., Shimogawa, M., Wang, Z., Radu, I., Dormaier, R., Cobden, D. H.
We demonstrate that nonlinear transport through a two-terminal nanoscale sample is not symmetric in magnetic field B. More specifically, we have measured the lowest order B-asymmetric terms in...
Mechanisms of low-temperature wafer bonding (2005)
Reiche, M., Radu, I., Gabriel, M., Zoberbier, M., Hansen, S., Eichler, M.
Capabilities of an ambient pressure plasma for activation in LT wafer bonding processes (2005)
Gabriel, M., Cetin, V., Hansen, S., Reiche, M., Radu, I., Eichler, M.
Mechanisms of low-temperature wafer bonding (2005)
Reiche, M., Radu, I., Gabriel, M., Zoberbier, M., Hansen, S., Eichler, M.
Investigation of hydrogen implantation-induced blistering in SiGe (2005)
Radu, I., Reiche, M., Scholz, R., Webb, D., Gösele, U., Christiansen, S.H.
Wafer bonding involving strain-relaxed SiGe (2005)
Radu, I., Singh, R., Reiche, M., Gösele, U., Christiansen, S.H.
Silicon wafer bonding using deposited and thermal oxide: A comparative study (2005)
Radu, I., Singh, R., Reiche, M., Gösele, U., Kuck, B., Grabolla, T., ...
Low-temperature wafer bonding via DBD surface activation (2005)
Radu, I., Reiche, M., Zoberbier, M., Gabriel, M., Gösele, U.
Capabilities of an ambient pressure plasma for activation in LT wafer bonding processes (2005)
Gabriel, M., Cetin, V., Hansen, S., Reiche, M., Radu, I., Eichler, M.
Strained silicon on insulator (SSOI) by waferbonding (2005)
Christiansen, S.H., Singh, R., Radu, I., Reiche, M., Gösele, U., Webb, D., ...
Wafer bonding for optical MEMS (2005)
Bakke, T., Völker, B., Schenk, H., Radu, I., Reiche, M.
A low temp. direct bonding method that is CMOS compatible is described. The method is applied in the manufg. of advanced spatial light modulators with a matrix of up to 512 * 2048 individually...
Strained silicon on insulator (sSOI) by wafer bonding (2004)
Christiansen, S.H., Reiche, M., Radu, I., Singh, R., Gösele, U., Webb, D., ...
Low-temperature layer splitting of (100) GaAs by He+H coimplantation and direct wafer bonding (2003)