J-P R. Wells

Publication List Details

Period

2000 - 2004

Number

10

Co-Authors

Far-infrared modulated photoluminescence spectroscopy of InSb/GaSb quantum dot structures (2003)

Child, R. A., Nicholas, R. J., Mason, N. J., Shields, P. A., Wells, J-P. R., Bradley, I. V., ...

The first far-infrared modulated photoluminescence (FIRM-PL) measurements in InSb/GaSb quantum dots have been performed. Far-infrared absorption is found to both enhance and suppress the quantum dot...

Band anticrossing in dilute InNxSb1-x (2002)

Murdin, B. N., Adams, A. R., Murzyn, P., Pidgeon, C. R., Bradley, I. V., Wells, J-P. R., ...

Dilute nitrogen alloys of InSb exhibit extremely strong band gap bowing with nitrogen composition that has been associated with anticrossing between the localized resonant states of the nitrogen...

Intersubband lifetimes and free carrier effects in optically pumped far infrared quantum wells laser structures (2002)

Tan, H A, Xin, Z-J, Rutt, H N, Wells, J-P R., Bradley, I V

Electron intersubband lifetimes of 1.8 ps and 2.5 ps were measured in GaAs/AlGaAs asymmetric stepped quantum well samples by using a pump-probe three-beam technique at 4 K to room temperature. At...

Intersubband lifetimes and free carrier effects in optically pumped far infrared quantum wells laser structures (2002)

Tan, H A, Xin, Z-J, Rutt, H N, Wells, J-P R., Bradley, I V

Electron intersubband lifetimes of 1.8 ps and 2.5 ps were measured in GaAs/AlGaAs asymmetric stepped quantum well samples by using a pump-probe three-beam technique at 4 K to room temperature. At...

Intersubband lifetimes and free carrier effects in optically pumped far infrared quantum wells laser structures (2002)

Tan, H A, Xin, Z-J, Rutt, H N, Wells, J-P R., Bradley, I V

Electron intersubband lifetimes of 1.8 ps and 2.5 ps were measured in GaAs/AlGaAs asymmetric stepped quantum well samples by using a pump-probe three-beam technique at 4 K to room temperature. At...

Intersubband lifetimes and free carrier effects in optically pumped far infrared quantum wells laser structures (2002)

Tan, H A, Xin, Z-J, Rutt, H N, Wells, J-P R., Bradley, I V

Electron intersubband lifetimes of 1.8 ps and 2.5 ps were measured in GaAs/AlGaAs asymmetric stepped quantum well samples by using a pump-probe three-beam technique at 4 K to room temperature. At...

Auger recombination in long-wavelength infrared InNxSb1-x alloys (2001)

Murdin, B. N., Kamal-Saadi, M., Lindsay, A., O'Reilly, E. P., Adams, A. R., Nott, G. J., ...

Dilute nitrogen alloys of InSb exhibit strong band gap bowing with increasing nitrogen composition, shifting the absorption edge to longer wavelengths. The conduction band dispersion also has an...