The Survey of Extragalactic Nuclear Spectral Energies (2009)
Gupta, J. A., Browne, I. W. A., Pazderska, B. M.
We present the first results from the new Survey of Extragalactic Nuclear Spectral Energies (SENSE) sample of "blazars". The sample has been chosen with minimal selection effects and is therefore...
Gate Adjustable Coherent Three and Four Level Mixing in a Vertical Quantum Dot Molecule (2009)
Payette, C., Amaha, S., Hatano, T., Ono, K., Gupta, J. A., Aers, G. C., ...
We study level mixing in the single particle energy spectrum of one of the constituent quantum dots in a vertical double quantum dot by performing magneto-resonant-tunneling spectroscopy. The device...
Incommensurability and atomic structure of c(2x2)N/Cu(100) (2008)
Choi, T., Ruggiero, C. D., Gupta, J. A.
We use a scanning tunneling microscope operating in a low temperature, ultrahigh vacuum environment to study the atomic structure of single layer films of Cu2N grown on Cu(100). The c(2x2) lattice of...
and M. Metz. Silicon nano-transistors for logic applications. Physica E: Lowdimensional (2008)
A. Visinoiu, R. Scholz, S. Chattopadhyay, M. Alexe, A. Visinoiu, ...
thin films deposited on Si by ion beam sputtering: microstructure and dielectric properties.
Characteristics of GaInNAsSb/GaAs VCSELs operating near 1.55µm (2008)
Gupta, J.A., Calvez, S., Laurand, N., Weda, J., Burns, D., Dawson, M.D., ...
A detailed study of the high-power pulsed operation of C-band optically-pumped GaInNAsSb vertical cavity surface emitting lasers is reported. The devices employ a resonant periodic gain structure...
Two level anti-crossings high up in the single-particle energy spectrum of a quantum dot (2007)
Payette, C., Austing, D. G., Yu, G., Gupta, J. A., Nair, S. V., Partoens, B., ...
We study the evolution with magnetic field of the single-particle energy levels high up in the energy spectrum of one dot as probed by the ground state of the adjacent dot in a weakly coupled...
Austing, D. G., Payette, C., Yu, G., Gupta, J. A.
We report on the basic properties of recently observed magnetic field resonance, induced time dependent oscillation, and hysteresis effects in the current flowing through two weakly coupled vertical...
Piot, B. A., Maude, D. K., Henini, M., Wasilewski, Z. R., Gupta, J. A., Friedland, K. J., ...
In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should...
Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector (2007)
Leburn, C.G., McRobbie, A.D., Lagatsky, A.A., Brown, C.T.A., Sibbett, W., Calvez, S.*, ...
THE quaternary semiconductor system Ga In N As has been the subject of considerable recent interest. The ability to vary the nitrogen (N) and indium (In) concentrations permits the bandgap energy to...
Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector (2007)
Leburn, C.G., McRobbie, A.D., Lagatsky, A.A., Brown, C.T.A., Sibbett, W., Calvez, S., ...
THE quaternary semiconductor system Ga In N As has been the subject of considerable recent interest. The ability to vary the nitrogen (N) and indium (In) concentrations permits the bandgap energy to...
Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector (2007)
Leburn, C.G., McRobbie, A.D., Lagatsky, A.A., Brown, C.T.A., Sibbett, W., Calvez, S., ...
THE quaternary semiconductor system Ga In N As has been the subject of considerable recent interest. The ability to vary the nitrogen (N) and indium (In) concentrations permits the bandgap energy to...
GaInNAs(Sb) surface normal devices (2007)
Calvez, S., Laurand, N., Sun, H.D., Weda, J., Burns, D., Dawson, M.D., ...
After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a...
Sun, H.D.*, Calvez, S.*, Dawson, M.D.*, Gupta, J.A., Aers, G.C., Sproule, G.I.
The authors report the temperature dependent photoluminescence characteristics of a series of GaInNAsSb/Ga(N)As double quantum wells which all emit at 1.5–1.55 µm at room temperature and whose...
Sun, H.D., Calvez, S., Dawson, M.D., Gupta, J.A., Aers, G.C., Sproule, G.I.
The authors report the temperature dependent photoluminescence characteristics of a series of GaInNAsSb/Ga(N)As double quantum wells which all emit at 1.5-1.55 µm at room temperature and whose...
Sun, H.D., Calvez, S., Dawson, M.D., Gupta, J.A., Aers, G.C., Sproule, G.I.
The authors report the temperature dependent photoluminescence characteristics of a series of GaInNAsSb/Ga(N)As double quantum wells which all emit at 1.5-1.55 µm at room temperature and whose...
Studenikin, S. A., Sachrajda, A. S., Gupta, J. A., Wasilewski, Z. R., Fedorych, O. M., Byszewski, M., ...
The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these...
C-band emission from GaInNAsSbVCSEL on GaAS (2006)
Laurand, N.*, Calvez, S.*, Sun, H.D., Dawson, M.D., Gupta, J.A., Aers, G.C.
The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror,...
1550nm pulsed operation of a GaInNAsSb VCSEL (2006)
Laurand, N.*, Calvez, S.*, Dawson, M.D.*, Gupta, J.A., Aers, G.C
Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) with high-speed modulation are required as light source for the next generation metropolitan area network (MAN) and local area network...
Sun, H.D., Calvez, S.*, Dawson, M.D.*, Gupta, J.A., Sproule, G.I., Wu, X., ...
Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.
Sun, H.D. *, Calvez, S. *, Dawson, M.D. *, Gupta, J.A., Aers, G.C., Sproule, G.I
The authors report the temperature dependent photoluminescence characteristics of a series of GaInNAsSb/Ga(N)As double quantum wells which all emit at 1.5-1.55 mu m at room temperature and whose...
C-band emission from GaInNAsSbVCSEL on GaAS (2006)
Laurand, N., Calvez, S., Sun, H.D., Dawson, M.D., Gupta, J.A., Aers, G.C.
The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror,...
1550nm pulsed operation of a GaInNAsSb VCSEL (2006)
Laurand, N., Calvez, S., Dawson, M.D., Gupta, J.A., Aers, G.C.
Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) with high-speed modulation are required as light source for the next generation metropolitan area network (MAN) and local area network...
Sun, H.D., Calvez, S., Dawson, M.D., Gupta, J.A., Sproule, G.I., Wu, X., ...
Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.
C-band emission from GaInNAsSbVCSEL on GaAS (2006)
Laurand, N., Calvez, S., Sun, H.D., Dawson, M.D., Gupta, J.A., Aers, G.C.
The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror,...
1550nm pulsed operation of a GaInNAsSb VCSEL (2006)
Laurand, N., Calvez, S., Dawson, M.D., Gupta, J.A., Aers, G.C.
Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) with high-speed modulation are required as light source for the next generation metropolitan area network (MAN) and local area network...
Sun, H.D., Calvez, S., Dawson, M.D., Gupta, J.A., Sproule, G.I., Wu, X., ...
Oral presentation on spectroscopic characterization of 1.5um GaInN(Sb)As/GaNAs quantum-well structures by molecular-beam epitaxy.
Sun, H. D., Calvez, Stephane., Dawson, M. D., Gupta, J. A., Aers, G. C., Sproule, G. I.
The authors report the temperature dependent photoluminescence characteristics of a series of GaInNAsSb/Ga(N)As double quantum wells which all emit at 1.5-1.55 mu m at room temperature and whose...
Sun, H.D. *, Calvez, S. *, Dawson, M.D. *, Gupta, J.A., Sproule, G.I., Wasilewski, Z.R, ...
High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room temperature with a narrow linewidth of similar to 34 meV (12 meV at 5 K) were fabricated by...
Sun, H.D., Calvez, S., Dawson, M.D., Gupta, J.A., Sproule, G.I., Wasilewski, Z.R., ...
High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room temperature with a narrow linewidth of similar to 34 meV (12 meV at 5 K) were fabricated by...
Sun, H.D., Calvez, S., Dawson, M.D., Gupta, J.A., Sproule, G.I., Wasilewski, Z.R., ...
High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room temperature with a narrow linewidth of similar to 34 meV (12 meV at 5 K) were fabricated by...
Sun, H. D., Calvez, Stephane., Dawson, M. D., Gupta, J. A., Sproule, G. I., Wu, X., ...
High-quality GaInN(Sb)As/GaNAs double quantum wells (QWs) which emit at 1.54 mu m wavelength at room temperature with a narrow linewidth of similar to 34 meV (12 meV at 5 K) were fabricated by...
Gupta, J. A., Jürgensen, A., Crozier, E. D., Rehr, J. J., Prange, M.
X-ray absorption near-edge spectroscopy (XANES) is used to study the N environment in bulk GaN and in GaN{y}As{1-y} epilayers on GaAs (001), for y \~5%. Density-functional optimized structures were...
Spin dynamics in semiconductor nanocrystals (2002)
Gupta, J. A., Awschalom, D. D., Efros, Al. L., Rodina, A. V.
Time-resolved Faraday rotation is used to study both transverse and longitudinal spin relaxation in chemically-synthesized CdSe nanocrystals (NCs) 22-80 Angstroms in diameter. The precession of...