J. Ackaert

Strategies to Cope with Plasma Charging Damage in Design and Layout Phases (2005)

Wang, Z., Ackaert, J., Scarpa, A., Salm, C., Kuper, F.G., Vugts, M.

In this paper, strategics to cope with plasma charging damage in design and layout phases are discussed. A semi-empirical model is addressed first. With this model, a designer is able to predict the...

Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications (2004)

Ackaert, J, Lowe, A, Boonen, S, Yao, T, Rayhem, J, Desoete, B, ...

A critical problem of floating gate type nonvolatile memories (FG-NVMs) used in flash memories or EEPROMs is anomalous charge loss which leads to threshold voltage (V-t) shifts on a time scale of...

Plasma charging damage reduction in IC processing by a self-balancing interconnect (2004)

Wang, Zhiming; U0042846, Ackaert, J, Salm, C, Kuper, FG, De Backer, E

In this paper, a novel first order self-balancing interconnect layout design is proposed for reducing plasma-process induced charging damage (P2ID) in modern CMOS processes. According to the...

Plasma-charging damage of floating MIM capacitors (2004)

Wang, ZC, Ackaert, J, Salm, C, Kuper, FG, Tack, Michaƫl; U0044150, De Backer, E, ...

In this paper, the mechanism of plasma-charging damage (PCD) of metal-insulator-metal (MIM) capacitors as well as possible protection schemes are discussed. A range of test structures with different...

Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors (2001)

Ackaert, J., Wang, Z., De Backer, E., Colson, P., Coppens, P.

In this paper, charging induced damage (CID) to metal-insulator-metal-capacitator (MIMC), is reported. The damage is caused by the build up of charges on an oxide surface during a water rinsing step....