Effect of thermal annealing on the optical properties of self-assembled Ge/Si quantum dots (2006)
Nguyen-Duc, T.K., Le Thanh, V., Derrien, J., Yam, V., Boucaud, P., Bouchier, D.
Influence of point defects on the optical properties of self-assembled Ge/Si hut clusters (2006)
Nguyen-Duc, T. K., Le Thanh, V., Yam, V., Boucaud, P., Bouchier, D., Schmidt, O. G., ...
The kinetic formation of self-assembled Ge/Si hut clusters grown by ultra-high vacuum chemical-vapor deposition has been investigated by means of reflection high-energy electron diffraction, atomic...
Strain-balanced Si1-xGex/Si type II quantum wells for 1.55 mu m detection and emission (2005)
Sfina, N., Lazzari, J.L., Derrien, J., D'Avitaya, F.A., Said, M.
Influence of kinetic roughening on the epitaxial growth of silicon (1994)
Chevrier, J., Cruz, A., Pinto, N., Berbezier, I., Derrien, J.
The low temperature homoepitaxial growth of silicon has been probed in situ by Reflection High Energy Electron Diffraction (RHEED) in a Molecular Beam Epitaxy (MBE) chamber in the temperature range...
Influence of kinetic roughening on the epitaxial growth of silicon (1994)
Chevrier, J., Cruz, A., Pinto, N., Berbezier, I., Derrien, J.
The low temperature homoepitaxial growth of silicon has been probed in situ by Reflection High Energy Electron Diffraction (RHEED) in a Molecular Beam Epitaxy (MBE) chamber in the temperature range...
Influence of kinetic roughening on the epitaxial growth of silicon (1994)
Chevrier, J., Cruz, A., Pinto, N., Berbezier, I., Derrien, J.
The low temperature homoepitaxial growth of silicon has been probed in situ by Reflection High Energy Electron Diffraction (RHEED) in a Molecular Beam Epitaxy (MBE) chamber in the temperature range...
EXTENDED FINE STRUCTURES IN THE AUGER SPECTRA (1986)
ChaÎnet, E., Derrien, J., Cinti, R., Nguyen, T., De Crescenzi, M.
We have observed extended fine structures above core-valence-valence Auger transitions on several materials (Fe, Co, Ni, Cu). We analyse these oscillating structures following the same formalism used...
EXTENDED FINE STRUCTURES IN THE AUGER SPECTRA (1986)
ChaÎnet, E., Derrien, J., Cinti, R., Nguyen, T., De Crescenzi, M.
We have observed extended fine structures above core-valence-valence Auger transitions on several materials (Fe, Co, Ni, Cu). We analyse these oscillating structures following the same formalism used...
EXTENDED FINE STRUCTURES IN THE AUGER SPECTRA (1986)
ChaÎnet, E., Derrien, J., Cinti, R., Nguyen, T., De Crescenzi, M.
We have observed extended fine structures above core-valence-valence Auger transitions on several materials (Fe, Co, Ni, Cu). We analyse these oscillating structures following the same formalism used...
Dispersion of the dangling-bond surface states of Si(111)-(7 X 7) (1984)
Layer, J. M., Hoarau, J. Y., Lüth, H, Derrien, J.
Copyright AIP. This version is available at http://link.aps.org/abstract/PRB/v30/p7355
AES AND EELS MEASUREMENTS ON THE Si-Au-Ag INTERFACE (1981)
Cros, A., Salvan, F., Derrien, J.
Surface techniques under UHV conditions have been applied to the study of the Si-Au-Ag interface. The gold layer induces strong structural modifications : some silicon atoms diffuse into the silver...
AES AND EELS MEASUREMENTS ON THE Si-Au-Ag INTERFACE (1981)
Cros, A., Salvan, F., Derrien, J.
Surface techniques under UHV conditions have been applied to the study of the Si-Au-Ag interface. The gold layer induces strong structural modifications : some silicon atoms diffuse into the silver...
AES AND EELS MEASUREMENTS ON THE Si-Au-Ag INTERFACE (1981)
Cros, A., Salvan, F., Derrien, J.
Surface techniques under UHV conditions have been applied to the study of the Si-Au-Ag interface. The gold layer induces strong structural modifications : some silicon atoms diffuse into the silver...
Electron energy loss measurements on the gold-silicon interface. (1980)
Salvan, F., Cros, A., Derrien, J.
Gold films deposited at room temperatures on Si are analysed by Auger and electron energy loss spectroscopies which reveal the existence of : 1) a diffuse interface ; 2) a pure gold film; 3) a mixed...
ELECTRONIC SPECTRA OF THE AMORPHOUS AuSi INTERFACE (1980)
Cros, A., Derrien, J., Mouttet, C., Gaspard, J., Lambin, P., Salvan, F.
Auger and Electron Loss Spectra (ELS) have been measured on Au deposited on the (111) Si surface at room temperature. The absence of LEED pattern and a structural analysis by Auger technique clearly...
Electron energy loss measurements on the gold-silicon interface. (1980)
Salvan, F., Cros, A., Derrien, J.
Gold films deposited at room temperatures on Si are analysed by Auger and electron energy loss spectroscopies which reveal the existence of : 1) a diffuse interface ; 2) a pure gold film; 3) a mixed...
ELECTRONIC SPECTRA OF THE AMORPHOUS AuSi INTERFACE (1980)
Cros, A., Derrien, J., Mouttet, C., Gaspard, J., Lambin, P., Salvan, F.
Auger and Electron Loss Spectra (ELS) have been measured on Au deposited on the (111) Si surface at room temperature. The absence of LEED pattern and a structural analysis by Auger technique clearly...
Electron energy loss measurements on the gold-silicon interface. (1980)
Salvan, F., Cros, A., Derrien, J.
Gold films deposited at room temperatures on Si are analysed by Auger and electron energy loss spectroscopies which reveal the existence of : 1) a diffuse interface ; 2) a pure gold film; 3) a mixed...
ELECTRONIC SPECTRA OF THE AMORPHOUS AuSi INTERFACE (1980)
Cros, A., Derrien, J., Mouttet, C., Gaspard, J., Lambin, P., Salvan, F.
Auger and Electron Loss Spectra (ELS) have been measured on Au deposited on the (111) Si surface at room temperature. The absence of LEED pattern and a structural analysis by Auger technique clearly...
Electronic and crystallographic structures of silver adsorbed on silicon (111) (1978)
Derrien, J., Le Lay, G., Salvan, F.
We show, in this letter, direct relations between the electronic properties of the Ag/Si(111) system as investigated by low energy electron loss spectroscopy (ELS), and the silver growth process as...
Electronic and crystallographic structures of silver adsorbed on silicon (111) (1978)
Derrien, J., Le Lay, G., Salvan, F.
We show, in this letter, direct relations between the electronic properties of the Ag/Si(111) system as investigated by low energy electron loss spectroscopy (ELS), and the silver growth process as...
Electronic and crystallographic structures of silver adsorbed on silicon (111) (1978)
Derrien, J., Le Lay, G., Salvan, F.
We show, in this letter, direct relations between the electronic properties of the Ag/Si(111) system as investigated by low energy electron loss spectroscopy (ELS), and the silver growth process as...
Derrien, J., Arnaud D'Avitaya, F.
We propose a new method for monitoring surface reactions kinetics using Auger Spectroscopy. It allows continuous observations of adsorption and desorption kinetics of an element A on the surface of a...
Derrien, J., Arnaud D'Avitaya, F.
We propose a new method for monitoring surface reactions kinetics using Auger Spectroscopy. It allows continuous observations of adsorption and desorption kinetics of an element A on the surface of a...
Derrien, J., Arnaud D'Avitaya, F.
We propose a new method for monitoring surface reactions kinetics using Auger Spectroscopy. It allows continuous observations of adsorption and desorption kinetics of an element A on the surface of a...