Interlayer Interaction and Electronic Screening in Multilayer Graphene (2008)
Ohta, Taisuke, Bostwick, Aaron, McChesney, J.L., Seyller, Thomas, Horn, Karsten, Rotenberg, Eli
Hossain, M. A., Mottershead, J. D. F., Bostwick, A., McChesney, J. L., Rotenberg, E., Liang, R., ...
The discovery of quantum oscillations in the normal-state electrical resistivity of YBa2Cu3O6.5 provides the first evidence for the existence of Fermi surface (FS) pockets in an underdoped cuprate....
Interlayer interaction and electronic screening in multilayer graphene (2006)
Ohta, Taisuke, Bostwick, Aaron, McChesney, J. L., Seyller, Thomas, Horn, Karsten, Rotenberg, Eli
The unusual transport properties of graphene are the direct consequence of a peculiar bandstructure near the Dirac point. We determine the shape of the pi bands and their characteristic splitting,...
Rollings, E., Gweon, G. -H., Zhou, S. Y., Mun, B. S., McChesney, J. L., Hussain, B. S., ...
This paper reports the synthesis and detailed characterization of graphite thin films produced by thermal decomposition of the (0001) face of a 6H-SiC wafer, demonstrating the successful growth of...
Chains of gold atoms with tailored electronic states (2004)
Crain, J.N., McChesney, J.L., Zheng, F., Gallagher, M.C., Snijders, P.C., Bissen, M., ...
Gd disilicide nanowires attached to Si(111) steps (2002)
McChesney, J. L., Kirakosian, A., Bennewitza, R., Crain, J. N., Lin, J. -L., Himpsel, F. J.
Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step...
Atomic Scale Memory at a Silicon Surface (2002)
Bennewitz, R., Crain, J. N., Kirakosian, A., Lin, J. -L., McChesney, J. L., Petrovykh, D. Y., ...
The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites...