Application-driven simulation of nanoscaled CMOS transistors and circuits (2008)
Burenkov, A., Kampen, C., Baer, E., Lorenz, J., Ryssel, H.
Problems in the application-driven simulation of nanoscaled CMOS transistors and circuits are addressed in this paper. First, major physical effects determining the transistor performance at...
Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs (2008)
Burenkov, A., Kampen, C., Lorenz, J., Ryssel, H.
Problems of pre-silicon compact modeling of nano-scaled silicon-on-insulator MOSFETs are addressed using the extraction of SPICE model parameters directly from numerical TCAD simulations. Although...
Kampen, C., Burenkov, A., Lorenz, J., Ryssel, H.
A method for decreasing the parasitic source and drain contact resistances in decanano-scaled CMOS devices is presented in this work. The improvement of the electrical performance of the CMOS devices...
Advanced annealing strategies for the 32 nm node (2008)
Kampen, C., Martinez-Limia, A., Pichler, P., Burenkov, A., Lorenz, J., Ryssel, H.
In this work, the influences of advanced annealing schemes, spike and flash annealing and combinations of them, on the electrical behavior of modern FD SOI MOSFETs have been investigated by numerical...
Kampen, C., Burenkov, A., Lorenz, J., Ryssel, H., Aubry-Fortuna, V., Bournel, A.
This paper presents a quantummechanical modification of the conventional driftdiffusion model for simulation of quasi-ballistic carrier transport under high-field conditions. Thereby, the saturation...
Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths (2007)
Burenkov, A., Kampen, C., Lorenz, J., Ryssel, H.
Coupled process and device simulation has been applied to investigate the physical processes which determine the performance and scaling properties of fully depleted thin-silicon-body SOI based...
Process-induced diffusion phenomena in advanced CMOS technologies (2006)
Pichler, P., Burenkov, A., Lerch, W., Lorenz, J., Paul, S., Niess, J., ...
The continuous scaling of electron devices places strong demands on device design and simulation. The currently prevailing bulk transistors as well as future designs based on thin silicon layers all...
Increasing competitiveness by defining the company strategy and deriving partial goals and process performance measures (PPM) by means of top down system for divisions and departments of companies...
Genetic algorithm for optimization and calibration in process simulation (2004)
Fühner, T., Erdmann, A., Ortiz, C.J., Lorenz, J.
This paper proposes the use of genetic algorithms for process optimization and calibration of model parameters. The main principles of these evolution inspired optimizers are briefly explained....
Adaptive surface triangulations for 3D process simulation (2004)
We present an enhanced smoothing algorithm in order to minimize the number of nodes in a surface triangulation while at the same time the wafer topography is maintained, and changes of geometry are...
3D simulation of process effects limiting FinFET performance and scalability (2004)
Coupled three-dimensional process and device simulations have been applied to study effects limiting the performance of FinFETs, a novel CMOS transistors suggested to overcome the limitations of...
Three-dimensional simulation of ionized metal plasma vapor deposition (2004)
Kistler, S., Bär, E., Lorenz, J., Ryssel, H.
A physically based model for full three-dimensional(3D)feature-scale simulation of ionized metal plasma (IMP) deposition has been implemented. It assumes a dynamical equilibrium of particle fluxes...
Bär, E., Lorenz, J., Ryssel, H.
The simulation of chemical-mechanical polishing (CMP) is particularly important within integrated topography process simulation environments to allow for studying the interplay between etching,...
3D feature-scale simulation of sputter etching with coupling to equipment simulation (2004)
Bär, E., Lorenz, J., Ryssel, H.
Feature-scale simulation of sputter etching has been coupled to equipment parameters by means of transferring angular distributions of ions as provided by equipment simulation to our simulation code....
Figures of merit for CMOS switching speed (2003)
Burenkov, A., Gund, C., Lorenz, J.
A Figure of Merit for CMOS switching speed has been investigated using variation s of device parameters of CMOS transistors for several technology generations. A modification of the Figure of Merit...
Corner effect in double and triple gate FinFETs (2003)
The corner effect is known as a leakage current enhancement at the edges of the active areas in the shallow trench isolated CMOS transistors. It usually deterio rates the transistor performance. In...
On the role of corner effect in FinFETs (2003)
The corner effect which is known as a leakage current crowding at the edges of the active areas in the shallow trench isolated MOS transistors is investigated in FINFET transistors using...
Bär, E., Lorenz, J., Ryssel, H.
For simulating superconformal copper deposition by chemical vapor deposition (C VD) or electroplating (EP), a model based on the curvature-enhanced accelerator coverage (CEAC) mechanism has been...
The possibility to suppress the narrow channel effect due to the crowding of the leakage current near the edge of the active area in sub-quarter micrometer MOS transistors by means of a special...
Bär, E., Lorenz, J., Ryssel, H.
Simulation has been used to evaluate the influence of the geometry of etched vias (i.e. of varying aspect ratios and sidewall taper angles) in terms of the step coverage that can be achieved for...
A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation (2000)
Burenkov, A., Tietzel, K., Hössinger, A., Lorenz, J., Ryssel, H., Selberherr, S.
The high accuracy which is necessary for modern process simulation often requires the use of Monte-Carlo ion implantation simulation methods with the disadvantage of very long simulation times...
Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation (2000)
Appropriate meshes are crucial for accurate and efficient 3D process simulation. In this paper, we present a set of tools operating on surface and interface triangulations. These tools allow the...
Optimization of 0.18 µm CMOS Devices by Coupled Process and Device Simulation (2000)
Burenkov, A., Tietzel, K., Lorenz, J.
Coupled process and device simulation is applied for the optimization of the doping in 0.18 5m CMOS transistors. An advanced device architecture with a pocket type doping around the source/drain...
Bär, E., Lorenz, J., Ryssel, H.
In this paper, an approach is presented which is suitable for predicting the shape of copper layers deposited by low-pressure chemical vapor deposition (LPCVD) on three-dimensional (3D) features as...
Renal effects of uroguanylin and guanylin in vivo (1999)
Carrithers,S.L., Hill,M.J., Johnson,B.R., O'Hara,S.M., Jackson,B.A., Ott,C.E., ...
Uroguanylin and guanylin are newly discovered endogenous heat-stable peptides that bind to and activate a membrane bound guanylyl cyclase signaling receptor (termed guanylyl cyclase C; GC-C). These...
Burenkov, A., Tietzel, K., Lorenz, J., Ryssel, H., Schwalke, U.
A suppression of the narrow channel effect for deep sub-micron CMOS transistors when using a novel device architecture called EXTIGATE has recently been shown. This work compares the narrow channel...
A computationally efficient method for three-dimensional simulation of ion implantation (1999)
Burenkov, A., Tietzel, K., Hössinger, A., Lorenz, J., Ryssel, H., Selberherr, S.
A new method for an accurate and CPU time efficient three-dimensional simulation of ion implantation is suggested in this work. The method is based on a combination of the algorithmic capabilities of...
Wittl, J., Burenkov, A., Tietzel, K., Müller, A., Lorenz, J., Ryssel, H.
Coupled process and device simulation was applied for the optimization of sub-quarter-micron CMOS technology. Optimum conditions for critical ion implantation steps were found. Especially it was...
Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation (1999)
Appropriate meshes are crucial for accurate and efficient 3D process simulation. In this paper, we present a set of tools operating on surface and interface triangulations. These tools allow the...
Physical Properties Data for Rock Salt, (1998)
Gevantman, L. H., Lorenz, J., Clynne, M. A.
Rock salt and pure sodium chloride properties data are assembled into a single source. The properties covered include geological, mechanical, optical, thermal, radiation damage, electrical, magnetic,...
Bär, E., Lorenz, J., Ryssel, H.
Replacing in part experimental investigations by performing computer simulations helps saving time and costs in semiconductor manufacturing.In this work, we conducted a model calibration for...
Three-dimensional simulation of layer deposition (1998)
Bär, E., Lorenz, J., Ryssel, H.
A program for the three-dimensional (3D) simulation of layer depositionhas been developed. It is based on physical models for the description ofthe specific processes, and uses a triangular surface...
Optimization of critical ion implantation steps in 0.18 mu m CMOS technology (1998)
Burenkov, A., Wittl, J., Schwalke, U., Lorenz, J., Ryssel, H.
Monte-Carlo simulation of silicon amorphization during ion implantation (1998)
Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.
Bär, E., Henke, W., List, S., Lorenz, J.
A completely three-dimensional (3D) simulation of the processes involved in the fabrication of a dual-damascene (DD) interconnect scheme has been carried out. For the simulations, an integrated 3D...
Bär, E., Lorenz, J., Ryssel, H.
A simulator for the three-dimensional (3D) simulation of layer deposition has been developed. It allows the prediction of the shape of layers deposited on structured substrates. In this paper,...
Three-dimensional simulation of ion implantation (1997)
Lorenz, J., Tietzel, K., Burenkov, A., Ryssel, H.
With shrinking dimensions and growing complexity of advanced ULSI devices three-dimensional effects are becoming more and more important for their development and optimization. For this reason,...
Bär, E., Lorenz, J., Ryssel, H.
Three-dimensional (3D) simulations of conventional and collimated sputter deposition of titanium into contact holes with high aspect ratios have been carried out using a 3D topography simulator. In...
Bär, E., Lorenz, J., Ryssel, H.
A three-dimensional (M) simulation program has been developed which is capable of simulating layer deposition on 3D geometries. In this paper we present the application of the tool to the simulation...
Within the PROMPT project, a multidimensional Process simulation system is being developed which is designed to provide appropriate input for 3D device simulation. The concept of the software system...
Monte-Carlo simulation of silicon amorphization during ion implantation (1997)
Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.
Integrated three-dimensional topography simulation of contact hole processing (1997)
Bär, E., Benvenuti, A., Henke, W., Jünemann, B., Kalus, C., Niedermaier, P., ...
A software package for the three-dimensional simulation of topography processes which has been developed within the European project PROMPT is described. The software is capable of simulating...
Bär, E., Lorenz, J., Ryssel, H.
A 3D simulation program has been developed which is capable of simulating layer deposition on 3D topography features such as high aspect ratio contact holes. In this paper we investigate the sputter...
Bär, E., Lorenz, J., Ryssel, H.
A 3D simulation program has been developed which is capable of simulating layer deposition on 3D topography features such as high aspect ratio contact holes. In this paper we investigate the sputter...
3D simulation for sub-micron metallization (1997)
Bär, E., Lorenz, J., Ryssel, H.
A program for the three-dimensional (3D) simulation of layer deposition processes has been developed. A triangular discretization of the device geometry is used in combination with a particle...
Three-dimensional simulation of ion implantation (1996)
Tietzel, K., Burenkov, A., Lorenz, J., Ryssel, H.
With shrinking dimensions and growing complexity of advanced ULSI devices three-dimensional effects are becoming more and more important for their development and optimization. For this reason,...
3D simulation of LPCVD using segment based topography discretization (1996)
A new method for three-dimensional (3-D) simulation of low pressure chemical vapor deposition (LPCVD) in arbitrary geometries using a segment-based topography discretization with triangles, combined...
3-D simulation of LPCVD using segment-based topography discretization (1996)
A new method for three-dimensional (3-D) simulation of low pressure chemical vapor deposition (LPCVD) in arbitrary geometries using a segment-based topography discretization with triangles, combined...
J. Lorenz, S. T. Brooke, R. Petersen, Z. Torok, J. Wenzel
Undersea and Hyperbaric Medical Society, Inc. (http://www.uhms.org )
Trajectory split method for Monte-Carlo simulation of ion implantation (1995)
Bohmayr, W., Burenkov, A., Lorenz, J., Ryssel, H., Selberherr, S.
Three-dimensional simulation of topography and doping processes at FhG (1995)
Lorenz, J., Bär, E., Burenkov, A., Henke, W., Tietzel, K., Weiß, M.
The STORM technology CAD system (1995)
Lorenz, J., Hill, C., Jaouen, H., Lombardi, C., Lyden, C., Meyer, K. De, ...
This paper gives an outline of the STORM TCAD system. STORM is a program system for the two-dimensional simulation of semiconductor fabrication process sequences and the optimization of the...
Analytical modeling of lateral implantation profiles (1995)
Lorenz, J., Ryssel, H., Wierzbicki, R.J.
This paper outlines a novel analytical model for the two-dimensional description of ion implantation. Three-dimensional distributions of implanted dopant atoms are calculated using a convolution...
Analytical model for phosphorus large angle tilted implantation (1995)
Burenkov, A., Bohmayr, W., Lorenz, J., Ryssel, H., Selberherr, S.
3D simulation of tungsten low-pressure chemical vapor deposition in contact holes (1995)
We present a new method for three-dimensional (3D) simulation of low- pressure chemical vapor deposition in arbitrary geometry's using A segment-based topography discretization with...
3D simulation of topography and doping processes at FhG (1995)
Lorenz, J., Bär, E., Burenkov, A., Henke, W., Tietzel, K., Weiß, M.
3D Simulation of Low Pressure Chemical Vapor Deposition (1994)
A new method for the three-dimensional (3D) simulation of LPCVD using a modified string algorithm combined with a redistribution model is presented. Simulation results for rectangular holes are...
Wierzbicki, R.J., Biersack, J.P., Barthel, A., Lorenz, J., Ryssel, H.
It has been shown the incorporation of ion reflection phenomenon into a multilayer model enables much more accurate prediction of the implantated dopand distributions using analytical methods. The...