J. Lusakowski

Terahertz Radiation Detection by Field Effect Transistor in Magnetic Field (2009)

Boubanga-Tombet, S., Sakowicz, M., Coquillat, D., Teppe, F., Knap, W., Dyakonov, M. I., ...

We report on terahertz radiation detection with InGaAs/InAlAs Field Effect Transistors in quantizing magnetic field. The photovoltaic detection signal is investigated at 4.2 K as a function of the...

Terahertz detection by two dimensional plasma field effect transistors in quantizing magnetic fields (2008)

Sakowicz, M., Lusakowski, J., Karpierz, K., Grynberg, M., Knap, W., Köhler, K., ...

Detection of terahertz radiation by two dimensional electron plasma in high electron mobility GaAs/GaAlAs transistors was investigated at cryogenic temperatures in quantizing magnetic fields....

Terahertz detection by the entire channel of high electron mobility transistors (2008)

Sakowicz, M., Lusakowski, J., Karpierz, K., Knap, W., Grynberg, M., Köhler, K., ...

GaAs/ALGaAs and GaN/AlGaN high electron mobility transistors were used as detectors of THz electromagnetic radiation at liquid helium temperatures. Application of high magnetic fields led to the...

THz detection by field-effect transistors in magnetic fields: Shallow water vs. deep water mechanism of electron plasma instability (2008)

Sakowicz, M., Lusakowski, J., Karpierz, K., Grynberg, M., Knap, W., Köhler, K., ...

Detection of THz radiation by a high electron mobility (HEMT) GaAs/GaAlAs transistor was investigated at 4 K as a function of the magnetic field B. The detection signal (a source - drain photovoltage...

New trends in terahertz electronics: Review (2006)

Tamosiunas, V., Seliuta, D., Juozapavicius, A., Sirmulis, E., Valusis, G., El Fatimy, A., ...

High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN (2005)

Siekacz, M., Dybko, K., Skierbiszewski, C., Knap, W., Wasilewski, Z. R., Maude, D. K., ...

Terahertz detectors based on plasma oscillations in nanometric silicon field effect transistors (2005)

Teppe, F., Meziani, Y. M., Dyakonova, N., Lusakowski, J., Boeuf, F., Skotnicki, T., ...

Spin and interaction effects in Shubnikov-de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures (2004)

Knap, W., Fal'ko, V. I., Frayssinet, E., Lorenzini, P., Grandjean, N., Maude, D., ...

We present the results of high magnetic field (up to 30 T) and temperature (50 mK-80 K) dependent transport measurements on a 2DEG in GaN/AlGaN heterojunctions. A high mobility (above 60000 cm(2) V-1...

Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors (2004)

Knap, W., Teppe, F., Meziani, Y., Dyakonova, N., Lusakowski, J., Boeuf, F., ...

Symmetry of excitons in GaN. (1999)

Stępniewski, R., Potemski, M., Wysmołek, A., Pakuła, K., Baranowski, J. M., Lusakowski, J., ...

Polarised magnetoluminescence of excitons in homoepitaxial GaN layers (1999)

Wysmołek, A., Potemski, M., Stępniewski, R., Lusakowski, J., Pakuła, K., Baranowski, J. M., ...

Impurity related luminescence of homiepitaxial GaN studied with high magnetic fields. (1998)

Stępniewski, R., Wysmołek, A., Potemski, M., Lusakowski, J., Korona, K. P., Pakuła, K., ...