Pal, B., Goto, K., Ikezawa, M., Masumoto, Y., Mohan, P., Motohisa, J., ...
Time- and spectrally-resolved PL from a periodic array of InP/InAs/InP core-multishell nanowires is presented. InAs layer shows multipeak PL spectra. PL decay is nonexponential and very slow, with...
Noborisaka, J., Motohisa, J., Hara, S., Fukui, T., 原, 真二郎
We fabricated GaAs/AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked GaAs (111)B substrates; then...
Noborisaka, J., Motohisa, J., Hara, S., Fukui, T.
We fabricated GaAs/AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked GaAs (111)B substrates; then...
Noborisaka, J., Motohisa, J., Hara, S., Fukui, T.
We fabricated GaAs/AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked GaAs (111)B substrates; then...
Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates (2004)
Motohisa, J., Noborisaka, J., Takeda, J., Inari, M., Fukui, T., 本久, 順一
We report on a catalyst-free approach for the growth of semiconductor nanowires which is attracting interest as building blocks for nanoscale electronics and circuits. Our approach is based on...
Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates (2004)
Motohisa, J., Noborisaka, J., Takeda, J., Inari, M., Fukui, T.
We report on a catalyst-free approach for the growth of semiconductor nanowires which is attracting interest as building blocks for nanoscale electronics and circuits. Our approach is based on...
Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates (2004)
Motohisa, J., Noborisaka, J., Takeda, J., Inari, M., Fukui, T.
We report on a catalyst-free approach for the growth of semiconductor nanowires which is attracting interest as building blocks for nanoscale electronics and circuits. Our approach is based on...
Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE (2004)
Motohisa, J., Takeda, J., Inari, M., Noborisaka, J., Fukui, T., 本久, 順一
We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar structures using selective area (SA) metalorganic vapor phase epitaxy (MOVPE). By performing growth on SiO2-masked (1...
Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE (2004)
Motohisa, J., Takeda, J., Inari, M., Noborisaka, J., Fukui, T.
We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar structures using selective area (SA) metalorganic vapor phase epitaxy (MOVPE). By performing growth on SiO2-masked (1...
Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE (2004)
Motohisa, J., Takeda, J., Inari, M., Noborisaka, J., Fukui, T.
We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar structures using selective area (SA) metalorganic vapor phase epitaxy (MOVPE). By performing growth on SiO2-masked (1...
Polarization-dependent ultrafast rabi oscillations in single InGaAs quantum dots (2004)
Besombes, L., Baumberg, J.J., Motohisa, J.
Measurements of optical Rabi oscillations in the excited states of individual InGaAs are presented. Under pulsed resonant excitation we observe Rabi oscillations with increasing pulse area, which are...
Polarization-dependent Rabi oscillations in single InGaAs quantum dots (2004)
Besombes, L., Baumberg, J.J., Motohisa, J.
Measurements of optical Rabi oscillations in the excited states of individual InGaAs are presented. Under pulsed resonant excitation we observe Rabi oscillations with increasing pulse area, which are...
Single-electron AND/NAND logic circuits based on a self-organized dot network (2003)
Nakajima, F., Miyoshi, Y., Motohisa, J., Fukui, T., 本久, 順一
We experimentally demonstrated single-electron operations of an AND/NAND logic circuit based on a self-organized GaAs quantum-dot (QD) network fabricated by applying a selective-area metalorganic...
Single-electron AND/NAND logic circuits based on a self-organized dot network (2003)
Nakajima, F., Miyoshi, Y., Motohisa, J., Fukui, T.
We experimentally demonstrated single-electron operations of an AND/NAND logic circuit based on a self-organized GaAs quantum-dot (QD) network fabricated by applying a selective-area metalorganic...
Single-electron AND/NAND logic circuits based on a self-organized dot network (2003)
Nakajima, F., Miyoshi, Y., Motohisa, J., Fukui, T.
We experimentally demonstrated single-electron operations of an AND/NAND logic circuit based on a self-organized GaAs quantum-dot (QD) network fabricated by applying a selective-area metalorganic...
Coherent Spectroscopy of Optically Gated Charged Single InGaAs Quantum Dots (2003)
Besombes, L., Baumberg, J. J., Motohisa, J., 本久, 順一
The excited states of neutral and charged single InGaAs/GaAs quantum dots are studied using a confocal microspectroscopy technique. Because of their different Coulomb energy shifts, the charged and...
Coherent Spectroscopy of Optically Gated Charged Single InGaAs Quantum Dots (2003)
Besombes, L., Baumberg, J. J., Motohisa, J.
The excited states of neutral and charged single InGaAs/GaAs quantum dots are studied using a confocal microspectroscopy technique. Because of their different Coulomb energy shifts, the charged and...
Coherent Spectroscopy of Optically Gated Charged Single InGaAs Quantum Dots (2003)
Besombes, L., Baumberg, J. J., Motohisa, J.
The excited states of neutral and charged single InGaAs/GaAs quantum dots are studied using a confocal microspectroscopy technique. Because of their different Coulomb energy shifts, the charged and...
Coherent spectroscopy of optically-gated charged single InGaAs quantum dots (2003)
Besombes, L., Baumberg, J.J., Motohisa, J.
The excited states of neutral and charged single InGaAs/GaAs quantum dots are studied using a confocal microspectroscopy technique. Because of their different Coulomb energy shifts, the charged and...
Coherent spectroscopy of optically gated charged single InGaAs quantum dots (2003)
Besombes, L., Baumberg, J.J., Motohisa, J.
The excited states of neutral and charged single InGaAs/GaAs quantum dots are studied using a confocal microspectroscopy technique. Because of their different Coulomb energy shifts, the charged and...
Motohisa, J., Nakajima, F., Fukui, T., Van Der Wiel, W. G., Elzerman, J. M., De Franceschi, S., ...
We report on the fabrication of a dual-gated single-electron transistor (SET) based on a quantum dot (QD) formed by selective area growth of metalorganic vapor-phase epitaxy, and its low-temperature...
Motohisa, J., Nakajima, F., Fukui, T., Van Der Wiel, W. G., Elzerman, J. M., De Franceschi, S., ...
We report on the fabrication of a dual-gated single-electron transistor (SET) based on a quantum dot (QD) formed by selective area growth of metalorganic vapor-phase epitaxy, and its low-temperature...
Motohisa, J., Nakajima, F., Fukui, T., Van Der Wiel, W. G., Elzerman, J. M., De Franceschi, S., ...
We report on the fabrication of a dual-gated single-electron transistor (SET) based on a quantum dot (QD) formed by selective area growth of metalorganic vapor-phase epitaxy, and its low-temperature...
Motohisa, J., Van Der Wiel, W. G., Elzerman, J. M., De Franceschi, S., Nakajima, F, Ogasawara, Y., ...
We describe transport measurements in a novel dual-gated single electron transistor based on a quantum dot (QD) fabricated by selective area growth of metalorganic vapor phase epitaxy. We observed,...
Motohisa, J., Van Der Wiel, W. G., Elzerman, J. M., De Franceschi, S., Nakajima, F, Ogasawara, Y., ...
We describe transport measurements in a novel dual-gated single electron transistor based on a quantum dot (QD) fabricated by selective area growth of metalorganic vapor phase epitaxy. We observed,...
Motohisa, J., Van Der Wiel, W. G., Elzerman, J. M., De Franceschi, S., Nakajima, F, Ogasawara, Y., ...
We describe transport measurements in a novel dual-gated single electron transistor based on a quantum dot (QD) fabricated by selective area growth of metalorganic vapor phase epitaxy. We observed,...
Two-Stage Kondo Effect in a Quantum Dot at a High Magnetic Field (2002)
Van Der Wiel, W. G., De Franceschi, S., Elzerman, J. M., Tarucha, S., Kouwenhoven, L. P., Motohisa, J., ...
We report a strong Kondo effect (Kondo temperature ∼4 K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in...
Two-Stage Kondo Effect in a Quantum Dot at a High Magnetic Field (2002)
Van Der Wiel, W. G., De Franceschi, S., Elzerman, J. M., Tarucha, S., Kouwenhoven, L. P., Motohisa, J., ...
We report a strong Kondo effect (Kondo temperature ∼4 K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in...
Two-Stage Kondo Effect in a Quantum Dot at a High Magnetic Field (2002)
Van Der Wiel, W. G., De Franceschi, S., Elzerman, J. M., Tarucha, S., Kouwenhoven, L. P., Motohisa, J., ...
We report a strong Kondo effect (Kondo temperature ∼4 K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in...
Two-stage kondo effect in a quantum dot at a high magnetic field (2002)
Van Der Wiel, W.G., De Franceschi, S., Elzerman, J.M., Tarucha, S., Kouwenhoven, L.P., Motohisa, J., ...
Two-stage Kondo effect in a quantum dot at high magnetic field (2001)
Van Der Wiel, W. G., De Franceschi, S., Elzerman, J. M., Tarucha, S., Kouwenhoven, L. P., Motohisa, J., ...
We report a strong Kondo effect (Kondo temperature ~ 4K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in...