Atomic Layer-by-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD (1995)
Murota, J., Sakuraba, M., Watanabe, T., Matsuura, T., Sawada, Y.
Atomic layer-by-layer epitaxy control of Si and Ge in flash-heating CVD using SiH4 and GeH4 gases was investigated. Self-limiting SiH4 reaction on the Ge surface results in Si atomic-layer formation...
Murota, J., Takasawa, Y., Fujimoto, H., Goto, K., Matsuura, T., Sawada, Y.
Low-temperature epitaxial growth of undoped and doped Si1-xGex films on the Si(100) surface at 550°C was investigated under the cleanest possible reaction environment of SiH4, GeH4 and H2 with the...
Atomic Layer-by-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD (1995)
Murota, J., Sakuraba, M., Watanabe, T., Matsuura, T., Sawada, Y.
Atomic layer-by-layer epitaxy control of Si and Ge in flash-heating CVD using SiH4 and GeH4 gases was investigated. Self-limiting SiH4 reaction on the Ge surface results in Si atomic-layer formation...
Murota, J., Takasawa, Y., Fujimoto, H., Goto, K., Matsuura, T., Sawada, Y.
Low-temperature epitaxial growth of undoped and doped Si1-xGex films on the Si(100) surface at 550°C was investigated under the cleanest possible reaction environment of SiH4, GeH4 and H2 with the...
Atomic Layer-by-Layer Epitaxy of Silicon and Germanium Using Flash Heating in CVD (1995)
Murota, J., Sakuraba, M., Watanabe, T., Matsuura, T., Sawada, Y.
Atomic layer-by-layer epitaxy control of Si and Ge in flash-heating CVD using SiH4 and GeH4 gases was investigated. Self-limiting SiH4 reaction on the Ge surface results in Si atomic-layer formation...
Murota, J., Takasawa, Y., Fujimoto, H., Goto, K., Matsuura, T., Sawada, Y.
Low-temperature epitaxial growth of undoped and doped Si1-xGex films on the Si(100) surface at 550°C was investigated under the cleanest possible reaction environment of SiH4, GeH4 and H2 with the...
Low-temperature epitaxial growth of in-situ B-doped Si1-xGex films (1993)
Murota, J., Honma, F., Yoshida, T., Goto, K., Maeda, T., Aizawa, K., ...
We report in-situ boron doping of Si1-xGex films epitaxially grown on Si(100) by low-pressure chemical vapour deposition (LPCVD) process. The experiments are performed in an ultraclean hot-wall...
Murota, J., Maeda, T., Goto, K., Sakamoto, K., Aizawa, K., Ushioda, S., ...
Low-temperature epitaxial growth of Si/Si1-x Gex/Si heterostructures at high Ge fractions on Si (100) was investigated under the cleanest possible reaction environment of SiH4, GeH4 and H2 or Ar...
Silicon atomic layer growth using flash heating in CVD (1993)
Sakuraba, M., Murota, J., Ono, S.
Si atomic layer growth on Si was investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment of SiH4 or Si2H6 gas. In the case of SiH4, about 0.4 atomic layer...
Low-temperature epitaxial growth of in-situ B-doped Si1-xGex films (1993)
Murota, J., Honma, F., Yoshida, T., Goto, K., Maeda, T., Aizawa, K., ...
We report in-situ boron doping of Si1-xGex films epitaxially grown on Si(100) by low-pressure chemical vapour deposition (LPCVD) process. The experiments are performed in an ultraclean hot-wall...
Murota, J., Maeda, T., Goto, K., Sakamoto, K., Aizawa, K., Ushioda, S., ...
Low-temperature epitaxial growth of Si/Si1-x Gex/Si heterostructures at high Ge fractions on Si (100) was investigated under the cleanest possible reaction environment of SiH4, GeH4 and H2 or Ar...
Silicon atomic layer growth using flash heating in CVD (1993)
Sakuraba, M., Murota, J., Ono, S.
Si atomic layer growth on Si was investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment of SiH4 or Si2H6 gas. In the case of SiH4, about 0.4 atomic layer...
Low-temperature epitaxial growth of in-situ B-doped Si1-xGex films (1993)
Murota, J., Honma, F., Yoshida, T., Goto, K., Maeda, T., Aizawa, K., ...
We report in-situ boron doping of Si1-xGex films epitaxially grown on Si(100) by low-pressure chemical vapour deposition (LPCVD) process. The experiments are performed in an ultraclean hot-wall...
Murota, J., Maeda, T., Goto, K., Sakamoto, K., Aizawa, K., Ushioda, S., ...
Low-temperature epitaxial growth of Si/Si1-x Gex/Si heterostructures at high Ge fractions on Si (100) was investigated under the cleanest possible reaction environment of SiH4, GeH4 and H2 or Ar...
Silicon atomic layer growth using flash heating in CVD (1993)
Sakuraba, M., Murota, J., Ono, S.
Si atomic layer growth on Si was investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment of SiH4 or Si2H6 gas. In the case of SiH4, about 0.4 atomic layer...
CONTROL OF GERMANIUM ATOMIC LAYER FORMATION ON SILICON USING FLASH HEATING IN GERMANIUM CVD (1991)
Murota, J., Sakuraba, M., Mikoshiba, N., Ono, S.
The separation between surface adsorption and reaction of GeH4 on a Si substrate was investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment. The GeH4...
LOW-TEMPERATURE EPITAXY AND IN-SITU DOPING OF SILICON FILMS (1991)
Kircher, R., Furuno, M., Murota, J., Ono, S.
The B2H6 - and PH3 - partial pressure dependence of the doping concentration of in-situ doped silicon films, deposited in the temperature range between 600 and 750°C by low pressure chemical vapor...
LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT (1991)
Murota, J., Kato, M., Kircher, R., Ono, S.
Low-temperature Si and Ge CVD processing was investigated under the cleanest possible reaction environment of SiH4, GeH4 and H2 using an ultraclean hot-wall low-pressure CVD system. Epitaxial growth...
CONTROL OF GERMANIUM ATOMIC LAYER FORMATION ON SILICON USING FLASH HEATING IN GERMANIUM CVD (1991)
Murota, J., Sakuraba, M., Mikoshiba, N., Ono, S.
The separation between surface adsorption and reaction of GeH4 on a Si substrate was investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment. The GeH4...
LOW-TEMPERATURE EPITAXY AND IN-SITU DOPING OF SILICON FILMS (1991)
Kircher, R., Furuno, M., Murota, J., Ono, S.
The B2H6 - and PH3 - partial pressure dependence of the doping concentration of in-situ doped silicon films, deposited in the temperature range between 600 and 750°C by low pressure chemical vapor...
LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT (1991)
Murota, J., Kato, M., Kircher, R., Ono, S.
Low-temperature Si and Ge CVD processing was investigated under the cleanest possible reaction environment of SiH4, GeH4 and H2 using an ultraclean hot-wall low-pressure CVD system. Epitaxial growth...
CONTROL OF GERMANIUM ATOMIC LAYER FORMATION ON SILICON USING FLASH HEATING IN GERMANIUM CVD (1991)
Murota, J., Sakuraba, M., Mikoshiba, N., Ono, S.
The separation between surface adsorption and reaction of GeH4 on a Si substrate was investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment. The GeH4...
LOW-TEMPERATURE EPITAXY AND IN-SITU DOPING OF SILICON FILMS (1991)
Kircher, R., Furuno, M., Murota, J., Ono, S.
The B2H6 - and PH3 - partial pressure dependence of the doping concentration of in-situ doped silicon films, deposited in the temperature range between 600 and 750°C by low pressure chemical vapor...
LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT (1991)
Murota, J., Kato, M., Kircher, R., Ono, S.
Low-temperature Si and Ge CVD processing was investigated under the cleanest possible reaction environment of SiH4, GeH4 and H2 using an ultraclean hot-wall low-pressure CVD system. Epitaxial growth...