Osaka, J., Kumar, Senthil M., Toyoda, H., Ishijima, T., Sugai, H., Mizutani, T.
To identify the species which contribute to GaN growth, the authors investigated the discharge parameter (0.3–4.8 SCCM (SCCM denotes cubic centimeter per minute at STP), 150–400 W) dependences of...
Study on fundamental defects and their effect on GaAs device properties (1988)
Miyazawa, S., Watanabe, K., Osaka, J., Ikuta, K.
Our understanding of the causal relationship between material parameters and GaAs FET threshold voltage is briefly presented from the viewpoint of point defect reactions. Primarily, dislocations in...
Study on fundamental defects and their effect on GaAs device properties (1988)
Miyazawa, S., Watanabe, K., Osaka, J., Ikuta, K.
Our understanding of the causal relationship between material parameters and GaAs FET threshold voltage is briefly presented from the viewpoint of point defect reactions. Primarily, dislocations in...
Study on fundamental defects and their effect on GaAs device properties (1988)
Miyazawa, S., Watanabe, K., Osaka, J., Ikuta, K.
Our understanding of the causal relationship between material parameters and GaAs FET threshold voltage is briefly presented from the viewpoint of point defect reactions. Primarily, dislocations in...